非晶态合金薄带与膜的巨磁电阻抗效应理论及计算

通过建立具有平面近横向各向异性场的非晶态合金薄带及膜的磁畴结构模型，利用线性化Maxwell方程组及Landau-Lifshitz方程，推出了在高频交变磁场及外加面内轴向直流磁场H_ex作用下的铁磁材料的与取向相关的磁导率表达式，得到了对方位角平均的相对磁导率及阻抗的计算式，导出了磁导率与张量磁化率分量间的关系，对材料磁导率的实部及虚部随H_ex的变化进行了计算，并给出了对应的磁谱图.建立的磁导率与外磁场的理论关系可将Panina及Kraus给出的理论结果统一起来. 关键词： 非晶态合金薄带及膜 取向相关磁导率 GMI效应理论与计算 近横向各向异性场     

稀掺杂GaNxAs1－x(x≤0.03)薄膜的调制光谱研究

利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_1-x薄膜，并对图谱中所观察的光学跃迁进行了指认.在GaN_0.005As_0.995和GaN_0.01As_0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E₁+Δ₁+Δ_N.当N掺杂浓度达到 关键词： 压电调制反射光谱(PzR) xAs_1-x薄膜')" href="#">GaN_xAs_1-x薄膜 分子束外延(MBE)     

半导体激光器光束准直系统的功率耦合效率

在长距离无线光通信中，接收点光功率密度与光束发散角平方呈反比关系，为了获得小的发散角和大的功率耦合效率，要求准直系统有较大的数值孔径(NA)，但数值孔径过大会增加像差，因此合理设计功率耦合效率与准直系统的数值孔径就非常重要。该文对半导体激光器光束准直系统中功率耦合效率进行了研究，给出了半导体激光器光束功率耦合效率与k(孔径半径与孔径处等效光束半径之比)的关系表达式，并结合激光器光束准直系统，给出了半导体激光器光束功率耦合效率与准直系统数值孔径的关系表达式。该研究结论对于半导体激光器光束准直系统设计具有参考作用。     

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.     

A study of structural, compositional and optical properties of spray-deposited non-stoichiometric (Zn,Fe)S thin films

Non-stoichiometric ternary chalcogenides (Zn,Fe)S were prepared in the film form by pyrolytic spray deposition technique, using air/nitrogen as the carrier gas. The precursor solution comprised of ZnCl₂, FeCl₂ and thiourea. The depositions were carried out under optimum conditions of experimental parameters viz. carrier gas (air/nitrogen) flow rate, concentration of precursor constituents, nozzle substrate distance and temperature of quartz substrate. The deposited thin films were later sintered in argon at 1073 K for 120 min.The structural, compositional and optical properties of the sintered thin films were studied. X-ray diffraction studies of the thin films indicated the presence of (Zn,Fe)S solid solution with prominent cubic sphalerite phase while surface morphology as determined by scanning electron microscopy (SEM) revealed a granular structure.The chemical composition of the resulting thin films as analyzed by energy dispersive X-ray analysis (EDAX) reflected the composition of the precursor solutions from which the depositions were carried out with Fe at% values ranging from 0.4 up to 33.SEM micrographs of thin films reveal that the grain sizes of the thin films prepared using air as carrier gas and N₂ as carrier gas are in the vicinity of 300 and 150 nm, respectively.The diffuse transmittance measurements for thin films, as a function of wavelength reveal the dependence of direct optical band gap on Fe content and type of phase.     

Electrical properties and Schottky diodes using N-N′diphenyl-1-4phenylenediamine

Thin films of, N-N′diphenyl 1-4phenylene-diamineane are prepared using vacuum sublimation technique. The electrical conductivity from room temperature down to 127 K is studied. It is found that the conduction of charge carriers obeys T^−1/2 dependence on temperature. The average hopping distance, hopping energy, density of states and their variation due to post-deposition heat treatment are studied. Schottky diodes are fabricated with gold as ohmic contact and aluminium as Schottky contact. From the observed current voltage characteristics the saturation current density, diode ideality factor and the barrier height are determined. Their variation with air annealing is also investigated.     

直流磁控溅射一步法原位制备MgB2超导薄膜

用MgB2靶,控制直流磁控溅射工作在异常辉光放电或弧光放电状态,在SrTiO3衬底上原位一次性得到了MgB2超导薄膜,其起始转变温度为32K,零电阻温度为15K. 关键词： 高温超导体 超导薄膜 磁控溅射 二硼化镁     

Laser diagnostics of nanoscale dielectric films on absorbing substrate by differential reflectivity and ellipsometry

The differential reflection characteristics for ultrathin inhomogeneous dielectric film on absorbing substrate are investigated in the long-wavelength approximation. The obtained first-order expressions for differential reflectivity and changes in the ellipsometric angles caused by ultrathin layer are of immediate interest to the solution of the inverse problem. The method to determine the averaged values (not the realistic profile) of refractive index for inhomogeneous nanometric films are shown. The novel possibilities for determining the dielectric constant and thickness of nanoscale homogeneous films by the differential ellipsometric and reflectivity measurements are developed, and a simple method to estimate whether the nanometric film is homogeneous or not is also discussed.     

Approaches to improving critical current density of YBCO superconducting thick films deposited by electrophoresis

The irreversibility field (Hirr) of Y-based superconductor is much higher than that of Bi-based superconductor. Y-based superconductor is capable of maintaining stable electrical currents in high magnetic field and electric field, so it is a better suited mate-rial for electric-current applications. Commonly, the Y-based tapes comprise a YBCO thick film deposited on a flexible substrate, typically with an intermediate buffer layer, and an overcoat of noble metal. In this process, the interm…     

Development in Synthesis,Electrochemistry, LB Moieties of Phenothiazine Based Units

A convenient and higher yielding synthetic route to N‐alkyl‐bis(thiophene)phenothiazine derivatives is reported and their aggregation, electrochemical properties and polymerization are characterized. The key step in the synthesis of this group of compounds has been the Stille type coupling reaction between the N‐alkyldibromophenothiazine and tin derivatives of thiophene as the best way for preparation of conjugated N‐alkylphenothiazine derivatives. For this group of compounds we also present an electrochemical polymerization effect and widely adopted approach to prepare structurally ordered thin, electroconducting films by Langmuir–Blodgett technique.