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21.
The composition of thin perovskite films, especially the oxygen content, is a crucial parameter which influences many physical properties, such as conductivity and catalytic activity. Films produced by pulsed laser deposition are normally annealed in an oxygen atmosphere after deposition to achieve a desired oxygen content. In pulsed reactive crossed beam laser ablation, no annealing step is necessary, but a fundamental question regarding this deposition technique is still open: where does the oxygen in the films come from?There are three possibilities, i.e. from the target, from the gas background, or from the gas pulse. To answer this question two experiments were performed: 18O2 was used during the deposition process as background gas with 16O anions in the target and 16O2 gas pulse, and a 18O2 gas pulse with 16O from the target and background. These experiments revealed that the quantification of the oxygen origin is only possible, when no oxygen exchange occurs at the deposition temperature. The films are characterized after deposition by elastic recoil detection analysis (ERDA) to determine the 16O/18O ratio. Experiments with different oxidizing species in the gas pulse (N2O and O2) confirm that the oxidizing potential (N2O > O2) as well as the number of molecules are important. 相似文献
22.
计算机模拟仿真射频磁控溅射实验制备薄膜及离于电池电极,研究了在特定实验条件下薄膜的生长过程,并分析了影响薄膜生长的部分因素。 相似文献
23.
Nicolae Tomozeiu 《Applied Surface Science》2006,253(1):376-380
Thin films of a-SiOx (0 < x < 2) were prepared by reactive r.f. magnetron sputtering from a polycrystalline-silicon target in an Ar/O2 gas mixture. The oxygen partial pressure in the deposition chamber was varied so as to obtain films with different values of x. The plasma was monitored, during depositions, by optical emission spectroscopy (OES) system. Energy dispersive X-ray (EDX) measurements and infra-red (IR) spectroscopy were used to study the compositional and structural properties of the deposited layers.Structural modifications of SiOx thin films have been induced by UV photons’ bombardment (wavelength of 248 nm) using a pulsed laser. IR spectroscopy and X-ray photoemission spectroscopy (XPS) were used to investigate the structural changes as a function of x value and incident energy. SiOx phase separation by spinodal decomposition was revealed. The IR peak position shifted towards high wavenumber values when the laser energy is increased. Values corresponding to the SiO2 material (only Si4+) have been found for laser irradiated samples, independently on the original x value. The phase separation process has a threshold energy that is in agreement with theoretical values calculated for the dissociation energy of the investigated material.For high values of the laser energy, crystalline silicon embedded in oxygen-rich silicon oxide was revealed by Raman spectroscopy. 相似文献
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反应离子镀光学薄膜的微观结构分析 总被引:2,自引:1,他引:1
用反应离子镀方法制备了TiO2单层膜及TiO2/SiO2多层膜,用透射电子显微镜分别观察了由反应离子镀方法及传统蒸镀法二种不同工艺制得的TiO2单层膜及TiO2/SiO2多层膜的断面结构,并对TiO2单层膜进行了喇曼分析和卢瑟福背散射分析。 相似文献
26.
We report on Raman scattering of VO2 films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO2 films, compared with the stoichiometry VO2 films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO2 films is discussed. 相似文献
27.
后退火温度对溅射沉积Pb(Zr0.52Ti0.48)O3铁电薄膜结构和性能的影响 总被引:2,自引:0,他引:2
在具有Ti缓冲层的Pt(111)底电极上,用射频溅射工艺在较低的衬底温度(370℃)和纯Ar气氛中沉积Pb(Zr0.52Ti0.48)O3(PZT)薄膜,沉积过程中基片架作15°摇摆以提高膜厚的均匀性。然后将样品在大气中进行5min快速热退火处理,退火温度550-680℃。用XRD、SEM分析薄膜的微结构,RT66A标准铁电测试系统测量样品的铁电和介电性能。结果表明,所沉积的Pt为(111)取向,仅当后退火温度高于580℃,沉积在Pt(111)上的PZT薄膜才能形成钙钛矿结构的铁电相,退火温度在580-600℃时结晶为(110)择优取向,退火温度高于600℃时结晶为(111)择优取向。PZT薄膜的极化强度随退火温度的升高而增加,但退火温度超过650℃时漏电流急剧上升,因此退火处理的温度对PZT薄膜的结构和性能有决定性的影响。 相似文献
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29.
Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In2O3 films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In2O3:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively. 相似文献
30.
WOx/TiO2光催化剂的可见光催化活性机理探讨 总被引:6,自引:0,他引:6
采用磁控溅射技术在用浸渍提拉法制得的TiO2薄膜上,溅射氧化钨层,通过气相反应中光催化降解二甲苯的实验表明,WOx/TiO2薄膜具有可见光活性.通过UV-Vis吸收光谱、X射线光电子能谱(XPS)等方法对其可见光活性的机理进行探索.UV-Vis吸收光谱表明WOx,TiO2对可见光响应的范围有一定的扩展,吸收强度增加.XPS表明WOx/TiO2薄膜表面形成了明显的W杂质能级和Ti缺陷能级,这是WOx/TiO2在可见光范围有一吸收的主要原因,也是光催化剂具有可见光活性的必要条件之一,同时杂质能级的存在使半导体费米能级上移,载流子增加,光催化效率提高. 相似文献