离子束抛光工艺中驻留时间的综合算法

 在离子束抛光工艺中,驻留时间的求解是很关键的。通常求解驻留时间的时候,是用理想的高斯函数来近似实际的加工函数。如果使用实际的加工函数仿真加工,加工的效果不好。运用系数法和消去法的综合算法来提高采用实际加工函数仿真加工镜面面型的精度,首先多次用系数法得到比较理想且平滑的镜面面型,然后再用消去法精修面型。这种算法运算速度快,得到的面型精度高且较平滑。对这种综合算法进行仿真分析,比较了理想高斯函数与实际加工函数加工后的差别,同时比较了运用消去算法与综合算法得到的镜面面型,PV值由83.63 nm减小到46.92 nm,镜面精度提高了很多。     

Second harmonic generation of thermally poled ZnCl2 or ZnBr2-B2O3-TeO2 glasses and its mechanism

Second harmonic generation (SHG) was observed from halide, in specific, chlorine or bromine-containing tellurite glasses. The magnitude of SHG increased with increasing halides concentration and poling time. Although the mechanism of SHG is still controversial, it is generally accepted that the idea of the deficiency of cations near the anode side cause SHG. However, in the preset oxyhalide glass system without any singly positive charge cation, the polishing of the anode side showed no effect on SHG. On the other hand, the polishing of the cathode side significantly decreased the magnitude of SHG in the present alkali-free oxyhalide glasses. Therefore, the SHG mechanism in the present oxyhalide glass systems is made evident in which the movement of anions results in an anion-deficient layer near the cathode side.     

Ultra-smooth polishing of high-precision optical surface

A new method of ultra-smooth uniform polishing was presented, which can avoid high-precision surface figure getting worse after ultra-smooth polishing. At first, the fundamental and process were introduced. Then the process was simulated with “Gauss” and “V” type removal function. It shows that there will be no significant influence on optical surface figure after ultra-smooth uniform polishing with any type removal function. To demonstrate the process, a high-precision Ø100 mm fused silica flat optical element was polished, which was prior figured by IBF. Its surface figure accuracy root-mean-square (rms) value is improved from initial 3.624 nm to final 3.393 nm, the mid-spatial frequency surface roughness rms value is improved from initial 0.477 nm to final 0.309 nm, and the high-spatial frequency surface roughness rms value is improved from initial 0.167 nm to final 0.0802 nm. At last, the surface quality of the lens was analyzed by power spectral density (PSD). The result indicates that the surface roughness of high-precision optical element could be improved by ultra-smooth uniform polishing method without the surface figure destroyed.     

氧化铈抛光改善光束采样光栅衍射效率均匀性

作为强激光系统的终端组件之一,光束采样光栅是制作在熔石英基底上的浅槽光栅。利用熔石英的传统化学机械抛光技术,修正熔石英光束采样光栅的槽型轮廓,降低局部偏高的衍射效率,以提高光束采样光栅的整体效率均匀性。利用此方法已成功将430 mm430 mm的光束采样光栅的衍射效率均方根值（RMS）由30%附近降低到5%以下。实验结果显示,利用传统化学机械抛光技术可以有效提高光束采样光栅衍射效率均匀性,这是一种可行的技术方案。     

大口径激光玻璃环抛光学沥青抛光胶

研制了四种不同沥青和松香含量的光学沥青抛光胶,对其形貌、针入度、玻璃化转变温度、软化点和粘度等参量进行了表征。从组成和结构分析了抛光胶三种物理状态变化原因,将玻璃化转变温度和软化点作为其临界转变温度。实验研究了四种抛光胶对大口径激光玻璃的抛光效果,发现抛光胶中沥青和松香的质量分数分别为30%和70%时,抛光效果比较理想,在像散和表面疵病控制方面能够满足要求,可作为大口径激光玻璃抛光专用胶。     

碳化硅表面硅改性层的磁介质辅助抛光

为了实现碳化硅表面硅改性层的精密抛光,获得高质量光学表面,对磁介质辅助抛光技术进行研究。设计了适合碳化硅表面硅改性层抛光的磁介质辅助抛光工具,并对抛光工具的材料去除函数进行研究。针对材料去除函数的特性,对数控磁介质辅助抛光的驻留时间算法进行了研究。采用磁介质辅助抛光技术对碳化硅表面硅改性层平面样片进行了抛光实验。经过一次抛光迭代,碳化硅样片表面硅改性层的面形精度(均方根)由0.049λ收敛到0.015λ（λ=0.6328 μm）,表面粗糙度从2 nm改善至0.64 nm。实验结果表明基于矩阵代数的驻留时间算法有效,磁介质辅助抛光适合碳化硅表面硅改性层加工。     

Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid.The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing.By using zeta potential analyzer,particle size analyzer,horizon profilometer,thermogravimetric analysis and Fourier transform infrared spectroscopy,the pre-and the post-polished wafer surfaces as well as the pre-and the post-used ceria-based slurries are compared.Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.     

小半径柱面镜光学加工工艺研究

针对某新型导弹激光系统提出的小半径柱面镜,通过对传统柱面镜加工方法的综合分析比较,选择合适的加工方法、用不同抛光模层进行抛光比较,对多种分离器材料和分离器槽的长短、模具的摆动幅度等进行工艺试验,使小圆棒柱面镜的表面粗糙度最小值达到Ra 0.005 m,优于设计图纸表面粗糙度Ra 0.01 m的要求,后续再磨去多余的半个圆柱,形成并达到平面的技术要求,满足了此半圆柱状的小半径柱面镜全部技术条件,形成稳定批产加工能力。     

液体喷射抛光材料去除机理的研究

从实验出发,研究了液体喷射抛光中抛光区的特征及材料的去除机理。得到了垂直喷射时在材料的去除区域呈W型的环状分布现象,并运用射流与冲击理论对这一现象做了详细地分析。实验结果表明,磨料粒子碰撞时的剪切作用对材料的去除来说占主导地位,而直接冲击作用占次要地位。     

影响化学机械抛光4H导电SiC晶片表面质量的关键参数研究

选用二氧化硅抛光液抛光4H导电SiC晶片表面,探究影响SiC晶片表面质量的关键参数,获得更高的去除效率和表面质量.实验结果表明,SiC表面的氧化是氢氧根离子和双氧水共同作用的结果.保持压力不变并增加氢氧根离子或双氧水的含量,SiC表面去除速率先增加后保持不变.在更大的压力下增加氢氧根离子的含量,SiC表面的抛光去除速率进一步增加.通过优化的抛光参数,SiC表面的抛光去除速率达到142 nm/h.进一步研究结果表明,保持化学机械抛光过程中氧化作用与机械作用相匹配,是获得高抛光效率和良好的表面质量的关键.表面缺陷检测仪(Candela)和原子力显微镜(AFM)的测试结果表明,SiC抛光片表面无划痕,粗糙度达到0.06 nm.外延后总缺陷密度小于1个/cm2,粗糙度达到0.16 nm.