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101.
102.
P. A. Tchertchian C. J. Wagner T. J. Houlahan
Jr. B. Li D. J. Sievers J. G. Eden 《等离子体物理论文集》2011,51(10):889-905
Coupling electron‐hole (e–‐ h+) and electron‐ion plasmas across a narrow potential barrier with a strong electric field provides an interface between the two plasma genres and a pathway to electronic and photonic device functionality. The magnitude of the electric field present in the sheath of a low temperature, nonequilibrium microplasma is sufficient to influence the band structure of a semiconductor region in immediate proximity to the solid‐gas phase interface. Optoelectronic devices demonstrated by leveraging this interaction are described here. A hybrid microplasma/semiconductor photodetector, having a Si cathode in the form of an inverted square pyramid encompassing a neon microplasma, exhibits a photosensitivity in the ~420–1100 nm region as high as 3.5 A/W. Direct tunneling of electrons into the collector and the Auger neutralization of ions arriving at the Si surface appear to be facilitated by an n ‐type inversion layer at the cathode surface resulting from bandbending by the microplasma sheath electric field. Recently, an npn plasma bipolar junction transistor (PBJT), in which a low temperature plasma serves as the collector in an otherwise Si device, has also been demonstrated. Having a measured small signal current gain hfe as large as 10, this phototransistor is capable of modulat‐ing and extinguishing the collector plasma with emitter‐base bias voltages <1 V. Electrons injected into the base when the emitter‐base junction is forward‐biased serve primarily to replace conduction band electrons lost to the collector plasma by secondary emission and ion‐enhanced field emission in which ions arriving at the base‐collector junction deform the electrostatic potential near the base surface, narrowing the potential barrier and thereby facilitating the tunneling of electrons into the collector. Of greatest significance, therefore, are the implications of active, plasma/solid state interfaces as a new frontier for plasma science. Specifically, the PBJT provides the first opportunity to control the electronic properties of a material at the boundary of, and interacting with, a plasma. By specifying the relative number densities of free (conduction band) and bound (valence band) electrons at the base‐collector interface, the PBJT's emitter‐base junction is able to dictate the rates of secondary electron emission (including Auger neutralization) at the semiconductor‐plasma interface, thereby offering the ability to vary at will the effective secondary electron emission coefficient for the base surface (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
103.
104.
105.
本文涉及一种三角形谱啁啾光纤光栅的制备以及其在光纤无线(radio over fiber,RoF)单边带调制系统中的应用.基于相位掩模法和变速度折射率调制,实验制备了底部变化范围1.9 nm、透射深度0—15 dB的三角形谱啁啾光纤Bragg光栅,利用其透射谱具有较大负向斜边,研究了其在RoF系统中的应用.方案仅使用一个三角形谱光纤光栅,实现了以下两种功能: 1)双边带调制信号到单边带调制信号转换; 2)降低信号的载波边带比(carrier-to-sideband ratio,CSR),提高接收灵敏度.并
关键词:
光纤通信
微波光子
光纤布拉格光栅
单边带调制 相似文献
106.
107.
通过对磁场控制下的二维磁光子晶体太赫兹波偏振传输特性的研究,利用铁氧体磁光材料的磁导率随外磁场改变而变化的特点,设计了具有可控起偏、偏振分束和可调谐波片功能的光子晶体太赫兹偏振控制器件.利用平面波展开法和严格耦合波分析分别计算了光子晶体带隙位置和透过率随外磁场强度变化的关系,用时域有限差分法计算了场分布和相位.结果表明,该结构可以实现高偏振消光比的偏振起偏器和分束器,以及在1 THz附近-π-π相位范围的连续可调谐波片.
关键词:
太赫兹
光子晶体
铁氧体
偏振控制 相似文献
108.
利用传输线技术制备了左手材料,将左手材料与正常材料交替排列组合成平均折射率为零的一维光子晶体.该光子晶体在特定频段具有光子带隙,带隙不随晶格尺度和入射角的变化而改变.通过掺杂技术破坏光子晶体的周期性,可在禁带中引入缺陷模,这种结构的光子晶体可用于实现滤波器小型化和超强耦合.研究表明,通过调节缺陷的厚度可以控制缺陷模的频率,这为调节频率提供了一种方法.实验与仿真结果相符.
关键词:
左手材料
复合左右手传输线
光子晶体 相似文献
109.
一种基于结构性改变的光子晶体光纤光栅理论研究 总被引:2,自引:0,他引:2
对一种新型基于结构性改变的光子晶体光纤光栅原理进行了研究.采用多极法分析了结构性改变对折射率的影响,得到有效折射率与包层气孔塌缩之间的关系,建立了结构性改变光子晶体光纤光栅模型.利用耦合模理论对所成光栅性能进行了分析,重点研究了包层空气孔层数、空气孔占空比、气孔塌缩程度对光栅谐振波长、带宽的影响.研究结果表明,光子晶体... 相似文献
110.
The far infrared transmittances and Faraday rotation effect in one-dimensional photonic crystals that contain magnetic microcavities are calculated with the transfer matrix method. The different stacking sequences of dielectric layers in the magnetic photonic crystal are considered in this paper, and the linewidths of transmission peaks and localised light of the photonic crystals are discussed. The enhancement of Faraday rotation is presented in the magnetic photonic crystals, and the largest rotation angle at the frequency of the transmission peak is 29 °mm−1, which is larger than previous results. 相似文献