铒、钪膜中离子注入氦的热解析行为

采用热解析法初步研究了铒、钪膜中离子注入氦的热解析行为。研究结果表明:同种元素铒中离子注入氦的热释放峰位相同,但膜的致密性将影响氦的释放量,结构疏松的膜中存在的孔洞是氦的快速释放通道;在相同注入剂量和能量条件下,铒、钪膜中注入氦的热释放峰位不同,这可能与氦在铒、钪膜中的深度分布及膜的致密性有关,利用质子增强背散射法测量出能量为60 keV的4He+在铒、钪膜中的注入深度分别为210,308 nm。     

掺铒GaN薄膜的背散射/沟道分析和光致发光研究

采用背散射（RBS）/沟道（channeling）分析和傅里叶变换红外光谱（FT-IR）研究了掺铒G aN薄膜的晶体结构和光致发光（PL）特性.背散射/沟道分析结果表明：随退火温度的升高， 薄膜中辐照损伤减少；但当退火温度达到1000℃，薄膜中的缺陷又明显增加.Er浓度随注入 深度呈现高斯分布.通过沿GaN的<0001>轴方向的沟道分析，对于900℃，30min退火的GaN:Er 样品，Er在晶格中的替位率约76％.光谱研究表明：随退火温度的升高，室温下样品的红外P L峰强度增加；但是当退火温度达到100 关键词： GaN Er 离子束分析 光致发光     

Hybrid density functional study of optically active Er3+ centers in GaN

Understanding the luminescence of GaN doped with erbium (Er) requires a detailed knowledge of the interaction between the rare‐earth dopant and the nitride host, including intrinsic defects and other impurities that may be present in the host material. We address this problem through a first‐principles hybrid density functional study of the structure, energetics, and transition levels of the Er impurity and its complexes with N and Ga vacancies, substitutional C and O impurities, and H interstitials in wurtzite GaN. We find that, in the interior of the material, Er_Ga is the dominant Er³⁺ center with a formation energy of 1.55 eV, Er_Ga–V_N possesses a deep donor level at 0.61 eV which can assist in the transfer of energy to the 4f ‐electron core. Multiple optically active Er³⁺ centers are possible in Er‐doped GaN. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

掺铒光纤中方波信号高次谐波的快慢光特性

光纤中方波信号的慢光技术在全光通信和光纤传感等领域具有重要的应用前景. 提出了谐波相对延时量的度量方法, 分别采用速率方程和相干布居振荡理论, 对掺铒光纤中方波信号的基波和高次谐波的快慢光特性进行了研究. 在无抽运光输入情况下, 改变入射光功率, 入射探测光的基波最大相对延时量能达到20%, 且存在实现最大相对延时量的入射光功率为8 mW; 在有抽运光输入的情况下, 改变信号光增益, 入射探测光的基波相对超前量同样能达到-20%, 且随着信号光增益的增大而增加. N次谐波(N=1, 3, 5, 7, …)在频率f/N(f为基波信号最大延时量对应的调制频率)处有最大相对延时量, 且它们的最大延时量相同, 频率处于相干布居振荡引起的光谱烧孔带宽内.     

ICP-MS测定高纯氧化铒中稀土杂质的研究

从同位素的选择、基体效应,内标元素的选择及仪器工作等方面对实验参数进行了优化,重点研究了等离子体功率及仪器分辩率的改变对铒基体所形成的氢化物多原子离子干扰的影响。通过提高等离子体功率、改变仪器分辨率及数学方程校正等方法,减小和剔除了ErH对Ho和Tm测定的干扰。实验中选取Cs为内标元素,测定了不同含量的高纯氧化铒样品。分析结果与标准加入法结果进行了比较,之间无显著性差异。     

A laser frequency lock referenced to a single trapped ion

A frequency lock has been developed which frequency stabilizes a portion of the output from an ultrastable diode laser to the narrow 5s –4d transition at 445 THz (674 nm) of a single, trapped and laser cooled Sr ion. Digital processing is used to record quantum jump data and to servo the frequency applied to an acousto-optic modulator which is used to scan a portion of the laser output across two, symmetrically displaced Zeeman components. Stable locking has been obtained resulting in uncertainties in the ion transition referenced laser frequency of less than 150 Hz.     

微型铒玻璃激光器研究

报道了微型铒玻璃激光器的阶段性研究成果，研究了在自由振荡情况下输出膜片反射率、氙灯气压以及激光电容的大小对激光输出的影响。采用电光调Ｑ，获得了８ｍＪ的巨脉冲输出；采用转镜调Ｑ，获得了１２ｍＪ的巨脉冲输出，脉宽８０ｎｓ。     

环形腔自锁模掺钛蓝宝石激光器

实现了环形腔掺钛蓝宝石激光器的自锁模运转。在双向同时锁模时获得脉宽为３６ｆｓ的锁模脉冲；在单向锁模时得到脉宽为３２ｆｓ的锁模脉冲。并对激光器的运转特性进行了分析。     

Synthesis, Fabrication, and Photoluminescence of CaF2 Doped with Rare Earth Ions

Ambient condition wet synthetic techniques were used to synthesize CaF₂ doped with europium and erbium. Photoluminescence spectroscopy and energy-dispersive x-ray analyses were used to study the electronic states of rare earth (RE) ions and the degree of heterogeneity/homogeneity in the matrix. Raman spectroscopy was used to study the degree of crystallinity of CaF₂. Effects on the photoluminescence spectra were studied as a function of the thermal treatment of CaF₂ samples.     

ChemInform Abstract: Barium Dierbium(III) Tetrasulfide.

Orange needles of BaEr₂S₄ are obtained during an investigation of the Ba/Er/U/S system by solid state reaction of a mixture of ²³⁸U, Er, BaS, and S in the ratio 1:1:3:3 (evacuated C‐coated fused silica tube, 1273 K, 8 d, cooling rate 3 K/h) together with black crystals of Sb₂S₃ and US₂.