掺铒GaN薄膜的背散射/沟道分析和光致发光研究

采用背散射（RBS）/沟道（channeling）分析和傅里叶变换红外光谱（FT-IR）研究了掺铒G aN薄膜的晶体结构和光致发光（PL）特性.背散射/沟道分析结果表明：随退火温度的升高， 薄膜中辐照损伤减少；但当退火温度达到1000℃，薄膜中的缺陷又明显增加.Er浓度随注入 深度呈现高斯分布.通过沿GaN的<0001>轴方向的沟道分析，对于900℃，30min退火的GaN:Er 样品，Er在晶格中的替位率约76％.光谱研究表明：随退火温度的升高，室温下样品的红外P L峰强度增加；但是当退火温度达到100 关键词： GaN Er 离子束分析 光致发光

RBS/channeling study and photoluminscence properties of Er-implanted GaN

The Raman back scattering/channeling technique was used to analyze the damage recovery at different annealing temperatures and to determine the lattice locatio n of the Er-implanted GaN samples. A better damage recovery was observed with in creasing annealing temperature below 1000℃, but a complete recovery of the impl antation damage cannot be achieved. For a sample annealed for at 900℃ 30 min th e Er and Ga angular scans across the <0001> axis was measured, indicating that a bout 76% of Er ions occupies substitutional sites. Moreover, the photoluminscenc e (PL) properties of Er-implanted GaN thin films have been also studied. The exp erimental results indicate that those samples annealed at a higher temperature b elow 1000℃ had a stronger 1539nm PL intensity. The thermal quenching of PL inte nsity for samples annealed at 900℃ measured at temperatures from 15K to 300K is 30%.