类铍离子低激发态等电子系列的能量、精细结构和超精细结构

采用多组态相互作用方法及Rayleigh-Ritz 变分方法，并考虑相对论修正和质量极化效应，获得了类铍离子等电子系列（Z=4-10）低激发态1s²2p2p ¹D^e和1s²2p3p ³P^e的相对论能量。同时还计算了精细结构和超精细结构。计算结果与其他理论和实验符合的很好。     

非晶金刚石膜的性能及其应用

非品金刚石薄膜具有超高硬度等一系列优异的特殊性能，为工程界孜孜追求的材料表面镀膜。用百纳科技公司研发制造的过滤阴极真空电弧离子镀膜机镀制的非晶金刚石薄膜，SP^3金刚石结构量≥80％，硬度高，膜／基结合力高，摩擦系数小，耐磨损，耐腐蚀，透光率高，在电子，机械，光学，生物医学上有广泛应用前景。我们已在视窗玻璃，丝锥，模具，硬质合金刀头等产品上成功应用。     

Cu~+、Ag~+、Au~+与乙硫醇的气相化学反应

利用激光溅射 分子束的技术 ,结合反射飞行时间质谱计 ,研究了Cu+、Ag+、Au+与乙硫醇的气相化学反应。结果显示这三种金属离子与 (CH3 CH2 SH) n 反应形成一系列团簇离子M+(CH3 CH2 SH) n,且团簇离子尺寸不一样。Ag+、Au+与乙硫醇的反应还生成了 (CH3 CH2 SH) +n ,由此推测Cu+、Ag+、Au+与乙硫醇团簇的反应存在两种通道 ,一种通道是生成M+(CH3 CH2 SH) n,另一种是生成 (CH3 CH2 SH) +n 。Cu+、Au+与乙硫醇的反应还生成了M+(H2 S) (M =Cu、Au) ,但是实验中没有观察到Ag+(H2 S) ,理论计算表明Ag+(H2 S)很不稳定。另外 ,分析产物离子M+(CH3 CH2 SH) n 的强度发现 ,n =1～ 2之间存在明显的强度突变现象     

HI—V族化合物半导体的高能重离子辐照缺陷研究·

用正电子湮没寿命谱技术研究了2.4×1O15/cm2、2.2×1016/cm2注量的85MeV19F离子辐照N型GaP和1.6×1016/cm 2注量的85MeV19F离子辐照P型InP所产生的辐照缺陷.结果表明:两种注量辐照在GaP中均产生较高浓度的单空位.其浓度随着辐照注量的增大而增加;辐照也在InP中产生较高浓度的单空位.     

Spectral shifts and spectral switches in diffraction of ultrashort pulsed beams passing through a circular aperture

Based on the Fourier transform method, a simple closed-form expression for the on-axis power spectrum of ultrashort Gaussian pulsed beams in diffraction at a circular aperture is derived, which permits us to study spectral changes both analytically and numerically. It is shown that for diffracted pulsed beams there exist spectral red and blue shifts, spectral narrowing, and spectral switches in the near field. The aperture diffraction plays an important role in spectral switching, but both the truncation parameter and bandwidth (or equally, Fourier transform limited pulse duration) affect the behavior of spectral switches.     

Small and high-density GeSiC dots stacked on buried Ge hut-clusters in Si

Self-assembled GeSiC dots stacked on a Ge hut-cluster layer buried in Si have been investigated. The critical thickness for formation of GeSiC dots is reduced owing to the strain fields from the buried hut-clusters. By utilizing the stacked structure, the dot size is decreased and the uniformity is improved. The highest density of the GeSiC dots with stacked structures is 7.4×10¹⁰ cm⁻², which is six times larger than that of single GeSiC dots. The formation of the self-assembled GeSiC dots is strongly influenced by being stacked with buried Ge dots as well as C incorporation.     

The polarization property and irradiance distribution of incoherent and coherent Gaussian beam combinations

Based on the beam coherence-polarization (BCP) matrix, the polarization property of coherent and incoherent Gaussian beam combinations is studied in detail. The general expressions for the degree of polarization P of the resulting beam in case of incoherent and coherent combinations are derived. It is shown that P is dependent on the incoherent or coherent combination, propagation distance, separation, azimuth of the polarization plane and numbers of beamlets in general. The irradiance distribution of the resulting beam for the coherent cases depends on the azimuth of the polarization plane of beamlets. However, for the incoherent case it does not.     

129Xe30+轰击Ni表面激发靶原子偶极跃迁和禁戒 (M1和E2)跃迁的特征光谱线

报道了用高电荷态离子129Xe30+(150keV) 轰击金属Ni表面，激发的200—1000nm NiⅠ和NiⅡ的特征光谱线的实验结果.实验结果表明：用电荷态足够高的离子作光谱 激发源，无需很强的束流强度（nA量级），便可有效地产生原子和离子的复杂组态间跃迁所 形成的可见光波段的特征谱线，特别是NiⅠ和NiⅡ偶极禁戒的电四极跃迁E2和磁偶极跃迁M1 的特征光谱线.通过分析发现，在禁戒跃迁的谱线中，有些是电子组态相同而原子态不同的 偶极禁戒跃迁光谱线而且NiⅡ的684.84nm谱线较强. 关键词： 光谱 禁戒跃迁 电子组态 高电荷态离子     

LINEAR ACTIVE STRUCTURES AND MODES (Ⅱ)--DISCRETE SYSTEMS AND BEAMS

The basic concepts about the active structures and some attributes of the modes were presented in paper "Liner Active Structures and Modes ( Ⅰ ) ". The characteristics of the active discrete systems and active beams were discussed, especially, the stability of the active structures and the orthogonality of the eigenvectors. The notes about modes were portrayed by a model of a seven-storeyed building with sensors and actuators. The concept of the adjoint active structure was extended from the discrete systems to the beams that were the representations of the continuous structures. Two types of beams with different placements of the measuring and actuating systems were discussed in detail. One is the beam with the discrete sensors and actuators, and the other is the beam with distributed sensor and actuator function. The orthogonality conditions were derived with the modal shapes of the active beam and its adjoint active beam. An example shows that the variation of eigenvalues with feedback amplitude for the homo-configuration and non-homo-configuration active structures.     

High-Power CO2 Laser System with Repetition Rate Operation for High Current Multicharged Heavy Ion Generations

Experimental and numerical calculation results devoted to development of an optical system for an ion source based on a repetition rate CO₂ laser are described. The laser chain consists of a master oscillator, gas absorber cells, and a four-pass amplifier. The optical system provides smooth laser pulses with variable duration and high spatial quality that ensures efficiency for plasma heating and ion generation. The parameters of the plasma ion component measured in the CERN laboratory are applied for a lead target illumination.