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41.
Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors 下载免费PDF全文
Two-dimensional(2D) materials, such as graphene and Mo S2 related transition metal dichalcogenides(TMDC), have attracted much attention for their potential applications. Ferroelectrics, one of the special and traditional dielectric materials,possess a spontaneous electric polarization that can be reversed by the application of an external electric field. In recent years, a new type of device, combining 2D materials with ferroelectrics, has been fabricated. Many novel devices have been fabricated, such as low power consumption memory devices, highly sensitive photo-transistors, etc. using this technique of hybrid systems incorporating ferroelectrics and 2D materials. This paper reviews two types of devices based on field effect transistor(FET) structures with ferroelectric gate dielectric construction(termed Fe FET). One type of device is for logic applications, such as a graphene and TMDC Fe FET for fabricating memory units. Another device is for optoelectric applications, such as high performance phototransistors using a graphene p-n junction. Finally, we discuss the prospects for future applications of 2D material Fe FET. 相似文献
42.
Downward self‐polarization of lead‐free (K0.5Na0.5)(Mn0.005Nb0.995)O3 ferroelectric thin films on Nb:SrTiO3 substrate 下载免费PDF全文
Hae Jin Seog Chang Won Ahn Shinuk Cho Kwang‐Eun Kim Chan‐Ho Yang Tae Yeong Koo Sun‐Young Lee Jong Pil Kim Ill Won Kim 《固体物理学:研究快报》2017,11(1)
Spontaneously appearing macroscopic polarization (self‐polarization) in ferroelectrics without an electrode or an external electric field would enable the freedom to design many ferroelectric heterostructures and devices. The (K0.5Na0.5)(Mn0.005Nb0.995)O3 (KNMN) thin film was grown on Nb:SrTiO3 single‐crystal substrate and the resultant self‐polarization behavior due to strain relaxation was investigated. The lattice mismatch and difference in TEC between the KNMN thin film and the Nb:SrTiO3 substrate creates a compressive strain. The compressive strain gradient may be the main cause for the observed downward self‐polarization. The downward self‐polarization of the KNMN thin film can be explained by the strong inhomogeneous compressive strain caused by strain relaxation. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
43.
Anomalous behavior has been observed in the temperature range of T = 140–145 °C. The electric current I(T) of SbSI and SbSeI crystals along the c(z) axis changes significantly at the region of the antiferroelectric phase transition when DC voltage is applied. The peak positions are observed at 140 °C and 145 °C for SbSI and SbSeI, respectively. The birefringence spectra show temperature-dependent changes upon retardation m, confirming the antiferroelectric phase transition for both crystals. The peak positions observed from the optical measurements do not differ from the electrical measurements, showing the transition point at 140?°C and 145?°C for SbSI and SbSeI, respectively. 相似文献
44.
Efficiently enhanced energy storage performance of Ba2Bi4Ti5O18 film by co-doping Fe3+ and Ta5+ ion with larger radius 下载免费PDF全文
We present an efficient strategy, that is the co-substitution of Fe3+ and Ta5+ ions with large radius for Ti4+ ion, to enhance energy storage performance of Ba2Bi4Ti5O18 film. For the films co-doped with Fe3+ and Ta5+ ions, the maximum polarization under the same external electric field is improved because the radius of Fe3+ and Ta5+ ions is larger than that of Ti4+ ion. Moreover, due to the composition and chemical disorder, the relaxor properties are also slightly improved, which can not be achieved by the film doped with Fe3+ ions only. What is more, for the films doped with Fe3+ ion only, the leakage current density increases greatly due to the charge imbalance, resulting in a significant decrease in breakdown strength. It is worth mentioning that the breakdown strength of Fe3+ and Ta5+ ions co-doped film does not decrease due to the charge balance. Another important point is the recoverable energy storage density of the films co-doped with Fe3+ and Ta5+ ions has been greatly improved based on the fact that the maximum external electric field does not decrease and the maximum polarization under the same external electric field increases. On top of that, the hysteresis of the polarization has also been improved. Finally, the co-doped films with Fe3+ and Ta5+ ions have good frequency and temperature stability. 相似文献
45.
由于具有优异的压电性能,弛豫铁电单晶自上世纪90年代问世以来即成为了铁电压电领域研究的热点材料,并被认为是研发下一代高性能换能器、传感器等器件的重要压电材料。弛豫铁电单晶不但压电常数可达2500 pC/N,约为软性Pb(Zr,Ti)O3(PZT)陶瓷的5倍,而且其电致应变滞后也远小于软性PZT陶瓷。因此,弛豫铁电单晶高压电性能的产生机理一直是铁电压电领域的研究热点。本文主要介绍了弛豫铁电单晶材料在近些年的发展,从本征压电效应(晶格压电畸变)的角度归纳总结了弛豫铁电单晶高压电效应的产生机理,着重探讨了弛豫铁电单晶的重要特点—剪切压电效应。在本征效应的基础上,本文对弛豫铁电单晶压电效应与晶体组分、切向以及温度的关系进行了分析。需要指出的是,目前基于本征角度对弛豫铁电单晶高压电效应的分析仍处于定性的阶段,因而还不能完全排除一些可能导致弛豫铁电单晶高压电效应的非本征物理机制。 相似文献
46.
Based on the transverse Ising model and using decoupling approximation to the Fermi-type Green's function, we study the phase transition properties of the epitaxial ferroelectric film with one substrate. A general recursive equation of the ferroelectric thin film with two n-layer materials is obtained, which enables us to study the phase transition properties for any number layers forepitaxial ferroelectric thin film. With the help of this equation, we analyze the effect of the exchange interaction and the transverse field in the phase diagram, the influence to the polarizations and Curie temperature numerically. The results show that epitaxial ferroelectric film are able to induce a strong increase or decrease of Curie temperature to different exchange interactions and transverse fields within the epitaxial film layers. The theoreticalresults are in reasonable accordance with experimental data of different ferroelectric thin film. 相似文献
47.
Youbao Wan Junhao Chu Shaoling Guo Lingxian Bo Tianyan Yu Bingkun Yu 《International Journal of Infrared and Millimeter Waves》2001,22(1):197-205
The potassium lithium niobate crystals have been grown up. The shapes of solid-melt interfaces which maintaining the steady growth of the potassium lithium niobate crystals have been described. The optical transmission spectrum of the crystal has been surveyed. The perfected crystals showed good Second Harmonic Generation properties. 相似文献
48.
制备了铅基弛豫铁电体0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3和Pb(Zn1/3Nb2/3)O3基陶瓷. 铅基弛豫铁电体PMNT, PZN基陶瓷弛豫过程可用局域冻结模型描述. 在微畴-宏畴转变过程中, 弛豫铁电体产生结构起伏; 在相同的频率条件下, 弛豫铁电体的结构起伏程度越大, 弛豫程度越低. 在微畴-宏畴转变过程中, 随微畴的增大, 弛豫铁电体的弛豫特性减弱或消失. 相似文献
49.
50.
紫外激光诱导近化学计量比钽酸锂晶体铁电畴反转 总被引:1,自引:0,他引:1
对紫外激光诱导近化学计量比钽酸锂晶体铁电畴反转进行了实验研究。波长为351 nm的连续紫外激光被聚焦在近化学计量比钽酸锂晶体的-z表面,同时沿与晶体自发极化相反的方向施加均匀外电场。实验证实紫外激光辐照可以有效地降低晶体畴反转所需的矫顽电场,采用数字全息干涉测量技术检测证实在激光辐照区域实现局域畴反转。研究表明采用紫外激光诱导可以实现对近化学计量比钽酸锂晶体铁电畴反转的局域控制。提出了物理机理的理论分析,认为外电场和激光辐照场的共同作用在晶体内部产生高浓度、大尺寸的缺陷结构,缺陷一定程度上降低畴体成核和畴壁运动所需要克服的退极化能和畴壁能,实现激光诱导畴反转。 相似文献