Effect of Inorganic Ions on Oleate Adsorption at a Nigerian Hematite–Water Interface

Using “pure” natural hematite selected from a high silica Nigerian hematitic ore, oleate adsorption densities at the hematite–water interface were determined in the presence of various inorganic ions (anions and cations) of different charges and at varying concentrations. Adsorption density was determined using electrical conductivity measurements. The specific surface area of the hematite particles was determined using the method of adsorption of paranitrophenol in aqueous solution. Inorganic ions in solution depressed oleate adsorption at the aqueous hematite surface. The charge of the ion proved to be the dominant factor determining the depression of oleate adsorption. Ionic strength also was an influence, up to a limiting value at which monolayer oleate coverage of the hematite surface occurred. The inorganic ions in solution are considered to function through nonspecific adsorption in the diffuse region of the electric double layer.     

Thermal conductivity of the urea-hexadecane inclusion compound

The thermal conductivity and the heat capacity per unit volumec _p have been measured for the urea-hexadecane inclusion compound using the transient hot-wire method. Measurements were made under isobaric conditions at a pressure of 0.1 GPa and in the temperature range of 100–300 K. There was evidence for a phase transition at a temperature of about 160 K, in reasonable agreement with previous work. For the high-temperature phase was independent of temperature within ±1%. The low-temperature phase showed a weak temperature dependence, with (d In/d InT) _p = –0.13. It was inferred that interaction between acoustic phonons and low-frequency vibrational excitations of the guest molecules made a major contribution to the thermal resistivity. For the quantityc _p a weak maximum was observed in the region of the phase transition temperature.Dedicated to Dr D. W. Davidson in honor of his great contributions to the sciences of inclusion phenomena.     

Physically based molecular device model in a transient circuit simulator

Two efficient, physically based models for the real-time simulation of molecular device characteristics of single molecules are developed. These models assume that through-molecule tunnelling creates a steady-state Lorentzian distribution of excess electron density on the molecule and provides for smooth transitions for the electronic degrees of freedom between the tunnelling, molecular-excitation, and charge-hopping transport regimes. They are implemented in the fREEDA™ transient circuit simulator to allow for the full integration of nanoscopic molecular devices in standard packages that simulate entire devices including CMOS circuitry. Methods are presented to estimate the parameters used in the models via either direct experimental measurement or density-functional calculations. The models require 6–8 orders of magnitude less computer time than do full a priori simulations of the properties of molecular components. Consequently, molecular components can be efficiently implemented in circuit simulators. The molecular-component models are tested by comparison with experimental results reported for 1,4-benzenedithiol.     

Synthesis and characterization of oligo-4-[(pyridin-3-ylimino)methyl]phenol

The oxidative polycondensation of 4-[(pyridin-3-ylimino)methyl]phenol (4-PIMP) with O₂, H₂O₂, and NaOCl was studied in an aqueous alkaline medium between 50°C and 90°C. Oligo-4-[(pyridin-3-ylimino)methyl]phenol (O-4-PIMP) prepared was characterized by ¹H-NMR, ¹³C-NMR, FT-IR, UV-VIS, size-exclusion chromatography, and elemental and thermal analyses techniques. At the optimum reaction conditions, the yield of O-4-PIMP was 18.9%, 39.4%, and 46.8% using H₂O₂, O₂, and NaOCl oxidant, respectively. According to the TG analysis, the initial degradation temperature of O-4-PIMP was 218°C, which was by 50°C higher than that of 4-PIMP. Thermal analyses of 4-PIMP and O-4-PIMP were carried out in N₂ atmosphere at 15–1000°C. The highest occupied molecular orbital, the lowest unoccupied molecular orbital, and electrochemical energy gaps of 4-PIMP and O-4-PIMP were determined from the onset potentials for n-doping and p-doping, respectively. Also, optical band gaps of 4-PIMP and O-4-PIMP were determined according to UV-VIS measurements.     

Preparation of Polycrystalline Antimonic Acid Films by Electrophoretic Deposition

Cubic antimonic acid (Sb₂O₅·nH₂O) films were successfully prepared on stainless steel and Si(100) substrates by electrophoretic deposition (EPD) using two types of sols. The sols were prepared by reacting an H₂O₂ aqueous solution with Sb(O-i-C₃H₇)₃ or metallic Sb powder. The resulting films were found to consist of fine particles of cubic Sb₂O₅·nH₂O single crystals with uniform particle sizes of 30 nm and 150 nm. The weight of the Sb₂O₅·nH₂O deposit on the anode Si(100) substrate by EPD increased linearly with the current density in the range of 0–0.67 mA cm^–2, when the sol pH was over 7. The proton conductivity of the polycrystalline Sb₂O₅·nH₂O discs, formed from the two types of sols, was evaluated by an ac impedance method at room temperature under controlled levels of relative humidity.     

主族元素取代的11-钨铜杂多配合物的合成、表征及性质研究

合成了ⅡA,ⅣA,ⅤA族元素为取代原子的3个系列钨铜杂多配合物.经ICP,TG曲线确定其化学式为K8[CuZ(OH2)W11O39].xH2O和K17,18[Z′(CuW11O39)2].xH2O(Z=Mg,Ca;Z′=Sr,Ba,Sn,Pb,Sb,Bi).通过TG-DTA,IR,XRD,XPS,183W-NMR等手段对合成配合物结构进行了表征,并对其进行了讨论.结果表明,新配合物具有典型的Keggin结构,且主族元素进入到配合物的骨架中.由于新配合物中CuⅡ具有顺磁性,导致XPS,183W-NMR的测试结果表现出特殊性;用循环伏安法测定了新配合物的电化学性质,表明均为可逆氧化还原过程,还对导电性和热稳定性进行了研究.     

Synthesis of a new donor, BEDT-HBDST and crystal structures, electrical and magnetic properties of (BEDT-HBDST)2MX4 (M=Fe, Ga, X=Cl, Br), where BEDT-HBDST=2,5-bis(4,5-ethylenedithio-1,3-diselenol-2-ylidene)-2,3,4,5-tetrahydrothiophene

A novel conjugation-elongated bis(ethylenedithio)tetraselenafulvalene (BETS) type donor, 2,5-bis(4,5-ethylenedithio-1,3-diselenol-2-ylidene)-2,3,4,5-tetrahydrothiophene (BEDT-HBDST) and its magnetic and non-magnetic anion salts, (BEDT-HBDST)₂MX₄ (MX₄⁻=FeCl₄⁻, GaCl₄⁻, FeBr₄⁻ and GaBr₄⁻), were prepared. These four salts are isostructural and belong to the space group of P2/c. They showed semiconducting behavior with small activation energies (59-64 meV). The band structures of these salts are quasi one-dimensional and there is a midgap between the upper band and the lower band, since the degree of dimerization is significant in the stacking direction. The MX₄⁻ ions are located between the donor columns and near to the ethylenedithio moieties of the donor molecules. The magnetic susceptibilities of the FeCl₄⁻ and FeBr₄⁻ salts follow the Curie-Weiss law with Curie constants of 4.6 and 4.8 emu K mol⁻¹ (sum of the spins of S=5/2 and S=1/2) and negative Weiss temperatures of θ=−1.2 and −4.9 K, respectively, revealing a weak antiferromagnetic interaction of 3d spins of the FeCl₄⁻ and FeBr₄⁻ anions. The Fe?Fe (6.66-7.60 Å), Cl?Cl (4.81-4.82 Å) and Br?Br (4.74-4.77 Å) distances in the crystal structures of these salts are significantly long. Therefore, the direct magnetic interaction between the 3d spins of the nearest neighboring Fe³⁺ ions appears to be not readily accessible.     

New organic metals: Radical cation salts of bis(ethylenedioxo)tetrathiafulvalene with halide mercurate anions

Radical cation salts with halide mercurate anions were obtained by the electrochemical oxidation of bis(ethylenedioxo)tetrathiafulvalene (BEDO-TTF), and their conductivity was studied. The compounds (BEDO-TTF)₄Hg₃X₈ (X = Cl or Br), (BEDO-TTF)₄Hg_3.5I₉, and (BEDO-TTF)₂HgBr₃ possess the conductivity of the metallic type down to helium temperatures.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 5, pp. 1167–1170, May, 1996.     

Neue schnelle Ionenleiter vom Typ MMIIICl6 (MI = Li,Na, Ag; MIII = In,Y)

Novel Fast Ion Conductors of the Type M M^IIICl₆ (M^I = Li, Na, Ag; M^III = In, Y) The ternary chlorides Li₃InCl₆, Na₃InCl₆, Ag₃InCl₆, and Li₃YCl₆ have been studied by difference scanning calorimetry, high-temperature X-ray, infrared, and high-temperature Raman methods. Impedance spectroscopic measurements exhibit fast ionic conductivity increasing in the sequence Na₃InCl₆ < Li₃YCl₆ < Ag₃InCl₆ < Li₃InCl₆. In the range of 300°C, Li₃InCl₆ is the best lithium ion conductor known so far (σ = 0,2 Ω^?1 cm^?1 at 300°C). With the exception of Na₃InCl₆, the chlorides exhibit complicated order-disorder phase transitions.     

Insights on the origin of the structural phase transition in BaV10O15 from electronic structure calculations and the effect of Ti-doping on its structure and electrical transport properties

Band structure calculations at the level of LMTO-ASA provide insight into the electronic structure of BaV₁₀O₁₅ and the origin of the structural phase transition. A crystal orbital Hamiltonian population/integrated crystal orbital Hamiltonian population analysis provides evidence that the crystallographic phase transition is driven by V-V bond formation. As well, the energy bands near the Fermi level are very narrow, <1 eV, consistent with the fact that the observed insulating behavior can be due to electron localization via either Mott-Hubbard correlation and/or Anderson disorder. The partial solid solution, BaV_10−xTi_xO₁₅, was examined to study the effect of Ti-doping at the V sites on the structure and electronic transport properties. In spite of the non-existence of “BaTi₁₀O₁₅”, the limiting x=8, as indicated by a monotonic increase in the cell volume and systematic changes in properties. This limit may be due to the difficulty of stabilizing Ti²⁺ in this structure. For x=0.5 both the first order structural phase transition and the magnetic transition at 40 K are quenched. The samples obey the Curie-Weiss law to x=3 with nearly spin only effective moments along with θ values which range from −1090 K (x=0.5) to −1629 K (x=3). For x>3 a very large, ∼2×10⁻³ emu/mol, temperature independent (TIP) contribution dominates. Conductivity measurements on sintered, polycrystalline samples show semiconducting behavior for all compositions. Activation energies for Mott hopping derived from high temperature data range from ∼0.1 eV for x=0-1 and fall to a plateau of 0.06 eV for x=3-7. Low temperature data for x=3, 5 and 7 show evidence for Mott variable range hoping (VRH) with a T^1/4 law and in one case between 5 and 17 K, a Efros-Shklovskii correlated hopping, T^1/2 law, was seen, in sharp contrast to BaV₁₀O₁₅ where only the E-S law was observed up to 75 K. Seebeck coefficients are small (<35 μV/K), positive, roughly TIP and increase with increasing x up to x=5. This may point to a Heikes hopping of holes but a simple single carrier model is impossible. The compositions for x>3 are remarkable in that local moment behavior is lost, yet a metallic state is not reached. The failure of this system to be driven metallic even at such high doping levels is not fully understood but it seems clear that disorder induced carrier localization plays a major role.