Viscoelastic properties of nanostructured natural rubber/polystyrene interpenetrating polymer networks

The effects of the blend ratio and initiating system on the viscoelastic properties of nanostructured natural rubber/polystyrene‐based interpenetrating polymer networks (IPNs) were investigated in the temperature range of ?80 to 150 °C. The studies were carried out at different frequencies (100, 50, 10, 1, and 0.1 Hz), and their effects on the damping and storage and loss moduli were analyzed. In all cases, tan δ and the storage and loss moduli showed two distinct transitions corresponding to natural rubber and polystyrene phases, which indicated that the system was not miscible on the molecular level. However, a slight inward shift was observed in the IPNs, with respect to the glass‐transition temperatures (T_g's) of the virgin polymers, showing a certain degree of miscibility or intermixing between the two phases. When the frequency increased from 0.1 to 100 Hz, the T_g values showed a positive shift in all cases. In a comparison of the three initiating systems (dicumyl peroxide, benzoyl peroxide, and azobisisobutyronitrile), the dicumyl peroxide system showed the highest modulus. The morphology of the IPNs was analyzed with transmission electron microscopy. The micrographs indicated that the system was nanostructured. An attempt was made to relate the viscoelastic behavior to the morphology of the IPNs. Various models, such as the series, parallel, Halpin–Tsai, Kerner, Coran, Takayanagi, and Davies models, were used to model the viscoelastic data. The area under the linear loss modulus curve was larger than that obtained by group contribution analysis; this showed that the damping was influenced by the phase morphology, dual‐phase continuity, and crosslinking of the phases. Finally, the homogeneity of the system was further evaluated with Cole–Cole analysis. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 1680–1696, 2003     

On the role of the interface charge in non-ideal metal–semiconductor contacts

The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems.     

用数值方法分析微孔激光器出射光的近场特性

微孔激光器作为应用于近场光信息存储系统中的一种新型光源，它的出射光斑的近场特性对于近场光存储是十分重要的。针对纳米孔径运用角谱进行Fox-Li数值迭代，得到不同孔径微孔激光器的基模光强分布，然后运用二维非线性时域有限差分法分析微孔激光器出射端即微孔金属膜的近场光学性质，模拟计算了不同孔径和厚度的微孔金属膜的光强近场分布，从应用于近场光存储的角度，给出反映其近场光学特性的相关数据。发现由于TM模式下金属存在局域表面等离子增强效应，使得其出射强度比TE模式高一个数量级，从而更适于作为实际中近场光存储系统和原理试验的光学头。     

一种新的超分辨记录点的读出技术

提出一种新的超分辨记录点的读出技术—超分辨反射膜技术，详细分析了其原理。用该技术，以Sb为超分辨反射膜，SiN为介电层，在激光波长为632．8nm和光学头的数值也径为0．40的读出光学系统中实现了直径为380nm的超分辨记录点的读出。同时研究了Sb薄膜厚度对读出信噪比的影响规律，发现最佳的Sb薄膜厚度为28～30nm，所得的信噪比为38～40dB。     

电子储存环中插入元件的非线性束流动力学的Lie代数方法

介绍了用能保证哈密顿系统“辛”性质的Lie映射方法来研究电子储存环中的插入元件对束流动力学的影响.并以此方法对合肥光源中将要安装的波荡器UD?–?1对储存环的影响作了初步的研究     

Study of local lattice relaxation of substitutional impurities in silicon and germanium

Local lattice relaxation of substitutional donors in silicon investigated using self‐consistent multiple scattering Xα (MSXα) method within the framework of the standard muffin‐tin potential approximation is extended to substitutional donors in germanium and substitutional acceptors in both silicon and germanium. Incorporating the effect of lattice relaxation surrounding the impurity makes the model suitable for both shallow and deep levels. Chemical trends of some aspects of impurity states, such as local lattice relaxation and charge transfer, of the impurities both in silicon and germanium are inferred. © 2004 Wiley Periodicals, Inc. Int J Quantum Chem, 2004     

Charge density fluctuation of low frequency in a dusty plasma

The charge density fluctuation of low frequency in a dusty plasma, which is derived from the longitudinal dielectric permittivity of the dusty plasma, has been studied by kinetic theory. The results show that theP value, which describes the relative charge density on the dust in the plasma, and the charging frequency of a dust particle Ω _c , which describes the ratio of charge changing of the dust particles, determine the character of the charge density fluctuation of low frequency. For a dusty plasma ofP≪1, when the charging frequency Ω _c , is much smaller than the dusty plasma frequency ω_d, there is a strong charge density fluctuation which is of character of dust acoustic eigenwave. For a dusty plasma ofP≫1, when the frequency Ω _c , is much larger than ω _d there are weaker fluctuations with a wide spectrum. The results have been applied to the ionosphere and the range of radius and density of dust particles is found, where a strong charge density fluctuation of low frequency should exist.     

聚能射流的断裂时间

从描述聚能射流失稳的一维近似方程出发，导出了聚能射流断裂时间的近似公式。这个近似公式定量显示了屈服应力、本构关系、粘度和径向收缩效应等对射流断裂时间的影响，在４个不同的特殊近似下，可以自然演化为近１０年来所发表的几个半经验解析公式，并且在合理的参数范围内，公式给出的断裂时间曲线覆盖了射流断裂时间的全部实验点。     

Charge plate technique in recoil study: Evidence for collection of recoil charged species from solid targets on metal electrodes

The occurrence of charge on recoil⁵⁶Mn produced by the (n,γ) reaction in polycrystalline potassium permanganate has been examined using the ‘charge plate technique’. From considerations of capture gamma ray decay schemes and internal conversion it appears that, in a condensed medium, the recoil atom develops charge after losing much of its initial kinetic energy which allows collection on charged electrodes. Preliminary findings were presented at the International Symposium on Radiochemistry and Radiation Chemistry, RC-41 BARC, Bombay, Feb. 4–6 (1991).     

一维介观结链中电荷孤子的控制

研究了一维介观结链中的电势分布随各岛上门电压和电子数分布的变化关系,并发现在一个岛上加一个门电压会产生一个静电势孤子.通过调节门电压可以较好地控制静电势孤子的形状及其位置,从而达到对电荷孤子的有效控制. 关键词： 电荷孤子 介观结 单电荷隧穿