Self-Diffraction of Bessel Light Beams in a Nonlinear Medium

The phenomenon of self-diffraction of Bessel light beams (BLB) in a nonlinear liquid medium has been studied experimentally and theoretically for the first time. Diffraction maxima which do not correspond to integer orders for an induced periodic structure have been registered. It has been shown that the appearance of these maxima is due to the initial BLB modulation, which can be caused by the departure of the axicon refracting surface from the ideal conical surface, as well as by the imperfection of the form of the Gaussian beam incident on the axicon.     

Recurrence propagation equation of Hermite-Gaussian beams through a paraxial optical ABCD system with hard-edge aperture

Based on the generalized Huygens-Fresnel diffraction integral, a recurrence propagation equation of Hermite-Gaussian (H-G) beams through a paraxial optical ABCD system with hard-edge aperture is derived, which permits us to obtain the analytical propagation expression for H-G beams of any order. The advantages of our analytical results are analyzed, and the application is illustrated with numerical examples.     

低阻抗二极管产生的强流电子束能谱分布的数值模拟

 给出了低阻抗二极管产生的电子束能谱分布及外加磁场对二极管阻抗影响的数值模拟研究结果。结果表明，即使在外加电压恒定的条件下，二极管产生的电子束也具有一定的能谱分布，这说明用二极管电压、电流波形计算脉冲电子束能谱分布是不正确的。另外,外加磁场对低阻抗二极管的阻抗特性具有较大影响，其阻抗随外加磁场的增大而减小。分析认为这是由于外加磁场强度的变化改变了二极管中束电子的运动轨迹。当没有外加磁场或外加磁场较小时，低阻抗二极管产生的电子束发生自箍缩，此时二极管电流是自箍缩饱和顺位流；当外加磁场足够强时，电子束的自箍缩被抑制，二极管电流是没有箍缩时的空间电荷限制电流。束电流小于自箍缩临界电流的二极管其阻抗将不随外加磁场的变化而变化。     

2MeV注入器脉冲电子束时间分辨能谱诊断研究

 介绍了利用磁分析器和电子束产生的契伦科夫辐射光诊断直线感应加速器脉冲电子束时间分辨能谱的原理、方法及诊断系统，对中物院2MeV感应叠加型注入器的2kA强流脉冲电子束时间分辨能谱进行实验诊断，并与二极管电压进行对比分析。测得能量约2.2MeV，60ns内最大能量变化为4%。     

多束速调管的增益带宽

 研究了M个束、N个共振腔的多束速调管(MBK)的增益和带宽，得到了描述小信号增益和带宽与器件结构参数和电子束参数关系的公式，给出了在不同参数下增益随频率的变化曲线。分析了多腔对增益，多束对带宽的影响。计算结果表明：多腔可以提高增益；多束可以降低Q值，从而可以增中带宽，带宽增加工了3.6%，还可以提高增益；对于MBK，频率交叉调谐对增加带宽不如频率调谐好；空间电荷波只对增益有影响，对带宽没有影响。最后，预估一种L带多束速调管的增益带宽为8.1%。     

高斯光束计算平板波导自由传输区远场分布及其修正

对近轴近似条件下求解亥姆霍兹方程得到的高斯光束显式传播公式做了分析，同时，基于基尔霍夫衍射理论，在菲涅耳近似的条件下给出了相应的高斯光束在远场的传播公式，在此基础上，对近轴近似条件做出了定量分析，给出了这个近似条件引入的误差，提出了一种计算高斯光束远场分布的修正方法，并采用有限差分-光束传播方法(FD-BPM)来检验各种方法的准确性。把这种修正方法应用到平面光集成波导器件，如阵列波导光栅(AWG)、蚀刻衍射光栅(EDG)等器件的设计和模拟中，可以大大降低工作的复杂性，同时可以得到精确的结果。     

Analytical study of a flattened Gaussian beam through multi-apertured optical imaging systems of B = 0

By using the methods of the matrix decomposition and expansion of the hard-edged aperture function into a finite sum of complex Gaussian functions, the recurrence propagation expressions for a flattened Gaussian beam (FGB) through multi-apertured optical imaging systems of B = 0 are derived and illustrated with numerical examples. Comparisons with the straightforward numerical integration of the Collins formula and with the previous work are made. It is shown that the main advantages of our methods and results are the more accuracy and great reduction of computer time.     

射束有效宽度与成像系统MTF关系的研究

射线成像系统的射线有效宽度是评定系统成像分辨率的重要成像指标。以试验的方法,通过测试系统成像的MTF,通过对成像分辨率与射线有效宽度的关系进行研究,为射线数字成像(DR)及工业CT系统设计提供了参考。     

Effects of Evanescent Space-Harmonics on the Transmission Characteristics of a Gaussian Beam by Cylindrical Wire Grids

When electromagnetic waves propagate through a wire grid, there will be some evanescent space harmonics generated around the wire grid. In this paper, we mainly investigate their effects on the transmission characteristics of a Gaussian beam by cylindrical wire grids. The results are compared with those without taking account of evanescent space-harmonics.     

Ionic conductivity of epitactic MBE-grown BaF2 films

We studied parallel conductivities of pure BaF₂ films with thicknesses ranging from 35 to 300 nm, epitaxially grown on Al₂O₃(0 1 2) substrates by molecular beam epitaxy technique. The overall conductivities of the films are found to increase with decreasing thickness. The detailed investigation of the overall conductance as a function of the thickness permits the deconvolution of bulk and boundary effects, the latter being attributed to distinct space charge effects in the interface between BaF₂ film and Al₂O₃ substrate. The (extrinsic) Debye length (λ) is estimated to be about 8 nm at T=593 K, which corresponds to an impurity content of 10¹⁸/cm³ (singly ionized dopant assumed). This is consistent with the fact that we observed a constant boundary contribution for all investigated films (film thickness >4λ). It is also consistent with the Debye length observed in a previous report on CaF₂/BaF₂ heterolayers fabricated by the same technique, in which the low temperature enhancement was also attributed to space charges in BaF₂ [Nature 408 (2000) 946]. Only at low temperatures (below 370 °C), the conductance seems to be influenced by strain effect.