磁场对球头阴极二极管特性的影响

 采用全电磁PIC粒子模拟方法研究了磁场对球头阴极二极管物理特性的影响。结果表明外加磁场主要是通过对二极管束流轨迹的改变来影响二极管的物理特性。由于外加磁场将约束其产生电子束的发散，结果使其空间电荷限制电流减小，其值在无外加磁场并且自磁场可以忽略时的空间电荷限制电流值的0.5~1倍范围内。当外加磁场足够强时，束流轨迹主要受外加磁场控制，二极管产生的电子束既不箍缩也不发散。强外加磁场条件下的空间电荷限制电流近似为无外加磁场时的一半；在无外加磁场条件下，在阳极处的束流半径随二极管电压电流的增大而减小，空间电荷限制电流增强因子随束流半径的减小而减小，随二极管电压电流增大而减小。这一系列结果是在二极管电流小于其自箍缩临界电流条件下得到的。     

感应电压叠加器驱动阳极杆箍缩二极管型脉冲X射线源

 介绍了自行研制的用于闪光照相且基于感应电压叠加器和阳极杆箍缩二极管的X射线源的组成、结构和主要参数。输出电压3 MV的Marx发生器给阻抗7.8 Ω水介质脉冲形成线充电,产生脉宽约70 ns,电压约1 MV的高功率脉冲,经过峰化开关和预脉冲开关后分成3路馈入三级感应电压叠加器感应腔进行电压叠加,感应电压叠加器次级采用真空绝缘传输线,阻抗从40 Ω变成60 Ω,驱动阳极杆箍缩二极管,二极管阴极为石墨,阳极为直径1.2 mm的钨杆,石墨阴极产生的电子束在电流自磁场作用下发生箍缩,轰击阳极,产生小焦斑脉冲Ｘ射线。该装置在Marx充电电压为±35 kV时,二极管电压约2.0 MV,二极管电流约为50 kA,半高宽约80 ns;X射线半高宽约为40 ns,剂量约为28 mGy,焦斑约为0.95 mm。利用该X射线源拍摄到了炸药爆炸产生的层裂碎片不同飞行时间的图像。     

感应电压叠加器驱动阳极杆箍缩二极管型脉冲X射线源

介绍了自行研制的用于闪光照相且基于感应电压叠加器和阳极杆箍缩二极管的X射线源的组成、结构和主要参数。输出电压3 MV的Marx发生器给阻抗7.8 Ω水介质脉冲形成线充电,产生脉宽约70 ns,电压约1 MV的高功率脉冲,经过峰化开关和预脉冲开关后分成3路馈入三级感应电压叠加器感应腔进行电压叠加,感应电压叠加器次级采用真空绝缘传输线,阻抗从40 Ω变成60 Ω,驱动阳极杆箍缩二极管,二极管阴极为石墨,阳极为直径1.2 mm的钨杆,石墨阴极产生的电子束在电流自磁场作用下发生箍缩,轰击阳极,产生小焦斑脉冲Ｘ射线。该装置在Marx充电电压为±35 kV时,二极管电压约2.0 MV,二极管电流约为50 kA,半高宽约80 ns;X射线半高宽约为40 ns,剂量约为28 mGy,焦斑约为0.95 mm。利用该X射线源拍摄到了炸药爆炸产生的层裂碎片不同飞行时间的图像。     

矩形强流电子束自磁场对束流均匀性的影响

对大面积矩形强流电子束自磁场在无限长束模型和有限长束模型下作了计算,给出了磁场的强度分布,并计算了在自磁场作用下的束电子的运动轨迹。描述了电子束在传输方向距阴极6cm处的箍缩图样。计算中考虑了二极管电场力,忽略了膜及Hibechi对束流的散射效应。     

强流相对论电子束的数值模拟

我们研制了CEBQ程序和ENVLOP程序，模拟稳态相对论电子束在二极管区的产生和加速，以及电子束在阳极通道内的传输过程。CEBQ程序模拟二极管区电子轨道，当阳极电压为1．5MV时，阴极总发射电流为17．9kA，进入阳极通道内的传输电流为4．3kA，阳极入口处D=4cm的束发射度为24．9cm．mrad。ENVLOP程序使用线性近似下的包络方程，描述电子束包络在螺旋管引导磁场作用下的变化，讨论了外加引导磁场对包络的影响。计算结果表明，在合适引导磁场作用下，束包络起伏较小，进入阳极通道的束流(4．3kA)能全部通过。     

具有双电子束结构的双波段相对论返波振荡器粒子模拟研究北大核心CSCD

研究了一种能够同时产生C波段和X波段微波、具有双电子束结构的相对论返波振荡器,采用嵌套式的高频结构将两个波段的束-波相互作用空间隔离开来,从而使两个波段的束-波相互过程互不影响。当二极管电压为650kV、内外环形电子束流分别为5.4,6.4kA、导引磁场为2.2T时,两个波段微波的频率分别为4.625,8.450GHz,模拟产生的微波功率分别为920,600MW,转换效率约为21.8%,17.1%。并采用粒子模拟法研究了导引磁场、二极管电压及两个束-波相互作用区关键结构参数对器件运行的影响,给出了双波段微波功率、频率随导引磁场、二极管电压等参数的变化曲线。     

正交场间隙中电子束动力学行为的研究

 用一维粒子模拟的方法对正交场平板二极管间隙中电子束的动力学行为进行了研究, 模拟结果表明: 注入电流存在着一个临界值, 当注入电流超过这个临界值时, 电子束的行为将由层流态变化到扰动态。当考虑相对论效应时, 这种由层流态到扰动态的中间过程较为明显, 且电流临界值突然下降, 与外加电压和磁场的关系不再是一个简单的单调递增关系。     

重复频率强流电子束的产生和传输实验研究

 电子束真空二极管重复频率运行时,它将表现出与单次运行时不同的特点。在电子束产生过程中,屏蔽半径应尽可能地小,且击穿延时时间较短,故选择石墨作为阴极材料。实验结果表明：在重复频率运行时,当环型阴极环厚较薄时,阴极的发射电流密度较大,因此对阴极的加热效应也加强,等离子体的膨胀速度加快,从而使得二极管阻抗减小,最后几次输出的电子束的电流较大,而电压减小;当重复频率较高时,由于加热效应使得阴极等离子体膨胀速度加快,最后几个脉冲阴极发射能力增强,波形重复性变差;当引导磁场强度增大时,阴极等离子体受到较大的磁场力约束,横向膨胀速度减慢,从而使得电子发射面积减小,总发射电流减小,二极管的阻抗增大。最后取引导磁场为1.5 T,阴极环厚为1 mm,得到重复频率100 Hz、束压827 kV、束流8.22 kA、脉冲波形之间重复性很好的均匀电子束输出。     

磁场引导双电子束传输模拟和实验研究

 利用外加纵向磁场把单台加速器驱动双阴极二极管产生的同步双电子束引出双漂移管,是双电子束实用化的关键环节。在实心束情况下,对双电子束约束磁场进行了3维PIC模拟。在粒子模拟的基础上搭建了双电子束磁场引导系统,进行了磁场引导环形双电子束传输实验研究,在二极管电压约380 kV时,环形双束流值分别为5.10 kA和4.92 kA。实验结果表明,所设计磁场系统能够对环形双电子束进行有效约束,有效约束磁场约0.5 T。     

低阻抗脉冲电子束加速器的二极管参数测量

低阻抗脉冲电子束加速器二极管的状态对加速器的调试运行是十分重要的。采用WP-2250可编程数字化系统将二极管电流、电压及电流随时间变化率波形进行时间关联、记录,通过数据处理获得了所需的二极管参数和二极管动态参数。     

Angular velocity spread of relativistic electron beam generated by high current diode

Theoretical analysis and numerical simulations of the Relativistic Electron Beam (REB) generation in a high current diode immersed in an external magnetic field has been done. The calculations have confirmed that the generated beam is homogeneous and monoenergetic in a broad central region. In the case of cylindrical diode the mixing of electron trajectories has been observed only in a narrow periphery beam region. The angle between particle trajectories and external longitudinal magnetic field varies chaotically from 0° to –25°. This phenomenon suppresses the excitation of two stream instability excited by the REB in the plasma column.     

新的高能注量电子束二极管系统

 为“闪光二号”加速器研制了新的二极管系统, 其电子束能注量比原二极管系统大3倍多。该系统由带滑闪开关的二极管、漂移管、脉冲磁场和真空靶室等部分组成, 通过减小阴极直径、增大轴向磁场强度和磁透镜比，调节滑闪开关距离和预脉冲开关气压等技术措施, 使二极管具有高能注量电子束输出的稳定工作状态, 在Marx发生器充电电压70kV条件下，在距阴极22cm的靶上获得了总能量21.5kJ、束斑直径52mm和能注量1.01kJ/cm²的电子束输出。     

真空二极管辐射微波的机理分析

在研究真空开关的过程中,发现真空二极管能辐射出宽带微波.这种器件只由带触发装置的阴极和平板阳极组成,不存在金属波纹慢波结构,所以真空二极管的辐射机理与等离子体填充微波器件不同,不能直接套用等离子体填充微波器件的相关理论.本文描述了真空二极管产生辐射的物理过程,建立了真空二极管辐射的数学模型,通过求解波动方程得到产生辐射的色散关系,并绘制出了色散曲线.将理论分析得到的色散曲线与已经测得的微波辐射进行比较,两者能很好地符合.理论分析和实验结果表明,电子束和磁化等离子体的相互作用是真空二极管产生微波辐射的原因.     

Formation and transportation of low-energy high-current electron beams in the plasma-filled diode under the effect of the external magnetic field

The mechanisms behind limitation of current of nonrelativistic high-current electron beams in the plasma-filled diode immersed in the external guiding magnetic field whose intensity is comparable with that of the beam self magnetic field are studied. It is shown that the beam current is limited by transmission capacity of the double layer between the cathode and anode plasma on the one hand and, on the other hand, by charge neutralization of the beam and by the decrease of the longitudinal velocity of the beam electrons under the action of the induced electric field and of the beam self magnetic field. The effect of the beam self fields on its cross-sectional current density and energy distributions is studied. Results of the numerical simulations are in good agreement with the experimental data.     

矩形栅慢波系统的高频特性分析

对于矩形栅这一经典的慢波结构，采用场匹配法来分析其慢波特性，进而得到其耦合阻抗。其中对槽区内的场处理，保留其高次项，表示为一无限本征驻波之和的形式。然后通过数值实例具体分析了矩形栅的两种典型结构:浅槽栅和深槽栅。当增大槽深后，色散增强，系统通带变窄，同时耦合阻抗有明显增大，工作点移向前向波区，适合用在放大器的慢波结构上。     

Effect of a transverse magnetic field on the generation of electron beams in the gas-filled diode

The effect of a transverse magnetic field (0.080 and 0.016 T) on generation of an electron beam in the gas-filled diode is experimentally investigated. It is shown that, at voltage U = 25 kV across the diode and a low helium pressure (45 Torr), the transverse magnetic field influences the beam current amplitude behind a foil and its distribution over the foil cross section. At elevated pressures and under the conditions of ultrashort avalanche electron beam formation in helium, nitrogen, and air, the transverse magnetic field (0.080 and 0.016 T) has a minor effect on the amplitude and duration of the beam behind the foil. It is established that, when the voltage of the pulse generator reaches several hundreds of kilovolts, some runaway electrons (including the electrons from the discharge plasma near the cathode) are incident on the side walls of the diode.     

Generation of a submillisecond electron beam with a high-density current in a plasma-emitter diode under the conditions of open plasma boundary emission

The generation of a 250-μs-wide electron beam in a plasma-emitter diode is studied experimentally. A plasma was produced by a pulsed arc discharge in hydrogen. The electron beam is extracted from a circular emission hole 3.8 mm in diameter under open plasma boundary conditions. The beam accelerated in the diode gap enters into a drift space in the absence of an external magnetic field through a hole 4.1 mm in diameter made in the anode. The influence of electron current deposition at the edge of the anode hole on the beam’s maximum attainable current, above which the diode gap breaks down, is studied for different accelerating voltages and diode gaps. The role of processes occurring on the surface of the electrodes is shown. For an accelerating voltage of 32 kV, a mean emission current density of 130 A/cm² is achieved. The respective mean strength of the electric field in the acceleration gap is 140 kV/cm. Using the POISSON-2 software package, the numerical simulation of the diode performance is carried out and the shape of steady plasma emission boundaries in the cathode and anode holes is calculated. The influence of the density of the ion current from the anode plasma surface on the maximum attainable current of the electron beam is demonstrated.     

Effect of longitudinal applied magnetic field on the self-pinched critical current in intense electron beam diode

The effect of applied longitudinal magnetic field on the self-pinched critical current in the intense electron beam diode is discussed. The self-pinched critical current is derived and its validity is tested by numerical simulations. The results shows that an applied longitudinal magnetic field tends to increase the self-pinched critical current. Without the effect of anode plasma, the maximal diode current approximately equals the self-pinched critical current with the longitudinal magnetic field applied; when self-pinched occurs, the diode current approaches the self-pinched critical current.     

预充等离子体密度对杆箍缩二极管特性的影响

在杆箍缩二极管工作前预先填充一定密度的等离子体,可以改善二极管特性,从而提高二极管出射X射线的剂量率。建立了预充等离子体的杆箍缩二极管的粒子模拟模型,通过收集轰击到阳极上的电子,诊断其轴向分布,可以给出不同时刻的束流箍缩特性。利用"剑光一号"加速器低阻抗状态(1 MV/9Ω/40ns)开展了预充等离子体的杆箍缩二极管实验研究。预充适当密度的等离子体后,二极管阻抗降低到10Ω,X射线辐射剂量从0.76mGy提高到3.19mGy,侧向焦斑从9mm降到4mm。模拟结果和实验基本符合。