CO2 laser assisted removal of UO2 and ThO2 particulates from metal surface

Pulsed laser assisted removal of uranium dioxide and thorium dioxide particulates from stainless steel surface have been studied using a TEA CO₂ laser. Decontamination efficiency is measured as a function of laser fluence and number of pulses. Threshold fluence for the removal of UO₂ particulates has been found to be lower than that required for the removal ThO₂ particulates. Usage of a ZnSe substrate, that is transparent to the laser wavelength used here, enabled us to decouple the cleaning effect arising out of absorption in the particulates from that in the substrate and has contributed towards understanding the mechanism responsible for cleaning. The experimental observations are also corroborated by simple theoretical calculations.     

Ablation yield and angular distribution of ablated particles from laser-irradiated metals: The most fundamental determining factor

Five metals (Zn, Cu, Ni, Ti, and Mo) were irradiated with 150 shots of a Q-switched Nd:YAG pulsed laser in a vacuum of 10⁻³ torr. The ions projected out of the laser-produced plasma (LPP) plume were detected by CR-39 detectors positioned at −15°, 0°, 30°, 60°, and 90° with respect to the target-surface normal at a distance of 5 cm from the target in each case. The angular distribution of LPP ions, which is characterized by the exponent n of cosⁿ θ distribution, is given by n = 2.5-11 for the five target metals. The value of the exponent n has no systematic correlation with the square-root of atomic mass of the target metals but exhibits systematic dependence on the room temperature Debye-Waller's thermal parameter B or the mean-square amplitude of atomic vibrations 〈u²〉. Likewise, the ablation yield (atoms/shot) of the twelve target metals investigated by Thestrup et al. (2002) [8] under identical irradiation conditions is a function of the room temperature B-factor or 〈u²〉.     

Effects of phase explosion in pulsed laser deposition of nickel thin film and sub-micron droplets

Nickel (Ni) thin films were deposited on glass substrates in high vacuum and at room temperature with third-harmonic or 355-nm output from a nanosecond Nd:YAG laser. At low laser fluence of 1 J/cm², the deposition rate was about 0.0016 nm/shot which increased linearly until 4 J/cm². Above 4 J/cm², the onset of phase explosion in the ablation abruptly increased the optical emission intensity from laser-produced Ni plume as well as thin-film deposition rate by about 6×. The phase explosion also shifted the size distribution and number density of Ni droplets on its thin-film surface. On the other hand, the surface structures of the ablated Ni targets were compared between the scan-mode and the fixed-mode ablations, which may suggest that droplets observed on the thin-film surface were caused by direct laser-induced splashing of molten Ni rather than vapour-to-cluster condensation during the plume propagation.     

Physical mechanism of silicon ablation with long nanosecond laser pulses at 1064 nm through time-resolved observation

Nanosecond (ns) laser ablation can provide a competitive solution for silicon micromachining in many applications. However, most of the previous studies focus on ns lasers at visible or ultraviolet (UV) wavelengths. The research is very limited for ns lasers at infrared (e.g., 1064 nm) wavelengths (which often have the advantage of much lower cost per unit average output power), and the research is even less if the ns laser also has a long pulse duration on the order of ∼100 ns. In this paper, time-resolved observation using an ICCD (intensified charge-coupled device) camera has been performed to understand the physical mechanism of silicon ablation by 200-ns and 1064-nm laser pulses. This kind of work has been rarely reported in the literature. The research shows that for the studied conditions, material removal in laser silicon ablation is realized through surface vaporization followed by liquid ejection that occurs at a delay time of around 200-300 ns. The propagation speed is on the order of ∼1000 m/s for laser-induced plasma (ionized vapor) front, while it is on the order of ∼100 m/s or smaller for the front of ejected liquid. It has also been found that the liquid ejection is very unlikely due to phase explosion, and its exact underlying physical mechanism requires further investigations.     

MAPLE deposition of Mn(III) metalloporphyrin thin films: Structural, topographical and electrochemical investigations

We report the deposition by MAPLE of metallized nanostructured (5,10,15,20-tetraphenyl)porphinato manganese(III) chloride thin films onto gold screen-printed electrodes, or 〈1 1 1〉 Si substrates. The deposited nanostructures were characterized by atomic force microscopy and exhibited globular structures with average diameters decreasing with laser fluence. Raman spectroscopy showed that no major decomposition appeared. We have investigated the Mn(III)-metalloporphyrin thin films by cyclic voltammetry in order to evaluate the potential bio/chemosensing activity on dopamine neurotransmitter analyte. We have found that the manganese(III)-porphyrin is appropriate as a single mediator for dopamine sensing in the specific case of gold screen-printed electrodes.     

Co removal and phase transformations during high power diode laser irradiation of cemented carbide

The use of a continuous wave-high power diode laser for removing surface Co-binder from Co-cemented tungsten carbide (WC-Co (5.8 wt%.)) hardmetal slabs was investigated. Combined scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction analyses were performed in order to study the phase transformations and micro-structural modifications of the WC-Co substrates occurring during and after laser irradiation. The micro-structure of the WC-Co progressively transforms as energy density increased, exhibiting stronger removal of Co and WC grain growth. At very high energy density, local melting of the WC grains with the formation of big agglomerates of interlaced grains is observed, and the crystalline structure of the irradiated substrate shows the presence of a brittle ternary eutectic phase of W, Co and C (often referred to as the η-phase). The latter can be detrimental to the mechanical properties of WC-Co. Therefore, the proper adjustment of the laser processing parameters plays a crucial role in surface treatments of WC-Co substrates prior to post-processing like diamond deposition.     

3D features of modified photostructurable glass-ceramic with infrared femtosecond laser pulses

The exclusive ability of laser radiation to be focused inside transparent materials makes lasers a unique tool to process inner parts of them unreachable with other techniques. Hence, laser direct-write can be used to create 3D structures inside bulk materials. Infrared femtosecond lasers are especially indicated for this purpose because a multiphoton process is usually required for absorption and high resolution can be attained. This work studies the modifications produced by 450 fs laser pulses at 1027 nm wavelength focused inside a photostructurable glass-ceramic (Foturan^®) at different depths. Irradiated samples were submitted to standard thermal treatment and subsequent soaking in HF solution to form the buried microchannels and thus unveil the modified material. The voxel dimensions of modified material depend on the laser pulse energy and the depth at which the laser is focused. Spherical aberration and self-focusing phenomena are required to explain the observed results.     

耦合微盘及带输出波导的单微盘腔的耦合模式特性

光学微腔具有很高的品质因子和很小的模式体积,在光电子器件研究方面具有重要的应用价值.运用时域有限差分(FDTD)法和Padé近似频谱分析法模拟研究了耦合微盘及带输出波导的单微盘微腔由于空间对称性破坏导致的模式耦合现象;特别计算了耦合模式的场分布和品质因子,并由场分布得出不同角量子数模式的能量比例.对耦合微盘,模式耦合引...     

单目摄像机-激光测距传感器位姿测量系统

在单目视觉测量中,由于模型自身的限制,沿摄像机光轴方向上的位移测量精度一般远低于垂直光轴方向上的位移测量精度.首先,从数学模型上分析了单目视觉位姿测量在沿光轴方向上位移测量精度低的原因;然后,为了提高沿摄像机光轴方向上的位移测量精度,通过在沿摄像机光轴方向上加装一个高精度的激光测距传感器,设计了一种单目摄像机-激光测距...     

辐射驱动条件下冲击波诊断用透明窗口离化现象研究

针对间接驱动情况下,冲击波诊断中出现的X光离化问题,利用半导体模型,解释了蓝宝石和石英晶体材料中出现黑区的理论过程,并进行了实验验证.利用光生载流子模型分析了石英晶体中时间方向上出现调制的过程,并进行了实验验证.发现使用石英晶体作为窗口材料,使用60μm厚度的烧蚀层,在180 eV辐射温度条件下,没有出现明显的黑区.使...