Weyl product algebras and modulation spaces

We discuss algebraic properties of the Weyl product acting on modulation spaces. For a certain class of weight functions ω we prove that is an algebra under the Weyl product if p∈[1,∞] and 1?q?min(p,p^′). For the remaining cases p∈[1,∞] and min(p,p^′)<q?∞ we show that the unweighted spaces Mp,q are not algebras under the Weyl product.     

对称相位函数掩模化的研究

本文对各种连续对称相位函数及其特性进行了分析,讨论了相位函数的2π调制、2^N和N-1法量化等问题及数据处理过程,提出二元衍射元件CIF(Caltech Intermediate Form)格式掩模数据的生成方法,并建立了实用软件,为激光直写技术实现二元衍射光学元件制作提供了有效的手段.     

色散缓变光纤中宽带调制不稳定性谱的产生

本文报道色散缓变光纤中调制不稳定性效应研究.从非线性Schrodinger方程出发,获得了增益谱与纵向色散变化参量和光纤传输距离的一般关系.研究发现,色散缓变光纤中调制不稳定性的增益谱较常规光纤中的宽得多.调节光纤色散纵向变化参量,可以得到较宽的增益谱.该文的研究结果为光纤中利用调制不稳定性产生超短孤子脉冲提供了理论根据.     

Solution of bending of cantilever rectangular plates under uniform surface-load by the method of two-direction trigonometric series

The bending of a cantilever rectangular plate is a very complicated problem in thetheory of plates.For a long time,there have been only approximate solutions for thisproblem by energy methods and numerical methods.since 1979,Prof.F.V.Chang of Tsing Hua University obtained,by the method ofsuperposition,a series of analytic solutions for cantilever rectangular plates under uniformload and concentrated load.In this paper,the two-direction trigonometric series is used to obtain the solution forthe bending of cantilever rectangular plates under uniform load.The obtained results arecompared with the results by the method of superposition.The comparison shows that theresults of these two methods are in good agreement,hence they are mutually confirmed to becorrect.     

一种从辐射噪声中提取调制谱的方法

在水下航行器的辐射噪声中,螺旋桨节拍对航行器的宽带辐射噪声存在着明显的振幅调制,调制频率与航行器螺旋桨的转速有关。该特征可用于估计航行器的速度及目标分类与识别。本文利用子波变换原理,从实测的航行器辐射噪声中提取了它的调制谱,并据此对螺旋桨转速进行了估计,计算机仿真结果与实测的螺旋桨的转速具有良好的一致性。     

高功率超短脉冲激光系统中光谱增益窄化补偿的调制函数

 设计了一种与高功率超短脉冲激光放大过程中获得的总增益、增益介质的带宽、激光带宽、脉冲中心波长等参数相关的调制函数,对激光放大过程中的光谱增益窄化进行补偿。此调制函数的优越性在于,对不同性能的激光系统,无需改变调制函数的形式就能适用。通过数值模拟的方法,讨论了在不同增益介质带宽、激光带宽、脉冲中心波长下的补偿效果。此调制函数在高功率超短脉冲激光系统中有良好的应用前景。     

基于石墨烯超材料表面等离子体激元共振的增强太赫兹调制

基于表面等离子体共振原理,采用石墨烯超材料设计了开口环结构,用于调制太赫兹波.增加石墨烯的费米能级,改变开口环的开口距离,叠加多层石墨烯以增强石墨烯超材料的共振强度,进而增强太赫兹波调制,调制频率范围包括低频段和高频段.由于石墨烯费米能级的可调谐性,单层结构在高低两个频段的调制深度分别为81%和68%,多层结构在高低两个频段的调制深度分别增加到93%和95%,为动态调制提供了可能.该设计为调制器、吸收体等太赫兹器件的设计提供了指导和借鉴.     

二维六角晶体材料中的Dirac 电子

本文综述由碳、硅、硼氮和二硫化钼等单元素或双元素构成的二维六角晶体材料中Dirac 电 子的研究成果与最新进展。文章从引言开始,接着介绍这些二维六角晶体材料的空间结构和基本 电子性质;然后探讨外场调控下这些材料在能谱和光吸收、量子输运、激子凝聚和热Josephson 效 应,以及拓扑量子相变等方面所表现出来的新奇的物理现象、简要的理论处理和可能的应用前景; 最后给出二维六角晶体材料相关研究的总结和展望。谨以本文献给南京大学建立物理学科100 周 年。     

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

Experimental Hall data that were carried out as a function of temperature (60–350 K) and magnetic field (0–1.4 T) were presented for Si-doped low Al content (x=0.14) n–Al_xGa_1−xAs/GaAs heterostructures that were grown by molecular beam epitaxy (MBE). A 2-dimensional electron gas (2DEG) conduction channel and a bulk conduction channel were founded after implementing quantitative mobility spectrum analysis (QMSA) on the magnetic field dependent Hall data. An important decrease in 2DEG carrier density was observed with increasing temperature. The relationship between the bulk carriers and 2DEG carriers was investigated with 1D self consistent Schrödinger–Poisson simulations. The decrement in the 2DEG carrier density was related to the DX-center carrier trapping. With the simulation data that are not included in the effects of DX-centers, 17 meV of effective barrier height between AlGaAs/GaAs layers was found for high temperatures (T>300 K). With the QMSA extracted values that are influenced by DX-centers, 166 meV of the DX-center activation energy value were founded at the same temperatures.     

Binding energies of donor impurities in modulation-doped double quantum wells under an electric field

In this study, we have investigated theoretically the binding energies of shallow donor impurities in modulation-doped GaAs/Al_0.33Ga_0.67As double quantum wells (DQWs) under an electric field which is applied along the growth direction for different doping concentrations as a function of the impurity position. The electronic structure of modulation-doped DQWs under an electric field has been investigated by using a self-consistent calculation in the effective-mass approximation. The results obtained show that the carrier density and the depth of the quantum wells in semiconductors may be tuned by changing the doping concentration, the electric field and the structure parameters such as the well and barrier widths. This tunability gives a possibility of use in many electronic and optical devices.