Strain-modulated anisotropic Andreev reflection in a graphene-based superconducting junction

We investigate the Andreev reflection across a uniaxial strained graphene-based superconducting junction. Compared with pristine graphene-based superconducting junction, three opposite properties are found. Firstly, in the regime of the interband conversion of electron-hole, the Andreev retro-reflection happens. Secondly, in the regime of the intraband conversion of electron-hole, the specular Andreev reflection happens. Thirdly, the perfect Andreev reflection, electron-hole conversion with unit efficiency, happens at a nonzero incident angle of electron. These three exotic properties arise from the strain-induced anisotropic band structure of graphene, which breaks up the original relation between the direction of velocity of particle and the direction of the corresponding wavevector. Our finding gives an insight into the understanding of Andreev reflection and provides an alternative method to modulate the Andreev reflection.     

二维六角晶体材料中的Dirac 电子

本文综述由碳、硅、硼氮和二硫化钼等单元素或双元素构成的二维六角晶体材料中Dirac 电 子的研究成果与最新进展。文章从引言开始,接着介绍这些二维六角晶体材料的空间结构和基本 电子性质;然后探讨外场调控下这些材料在能谱和光吸收、量子输运、激子凝聚和热Josephson 效 应,以及拓扑量子相变等方面所表现出来的新奇的物理现象、简要的理论处理和可能的应用前景; 最后给出二维六角晶体材料相关研究的总结和展望。谨以本文献给南京大学建立物理学科100 周 年。     

二维六角角晶体材料中的Dirac电子

本文综述由碳、硅、硼氮和二硫化钼等单元素或双元素构成的二维六角晶体材料中Dirac电子的研究成果与最新进展。文章从引言开始,接着介绍这些二维六角晶体材料的空间结构和基本电子性质;然后探讨外场调控下这些材料在能谱和光吸收、量子输运、激子凝聚和热Josephson效应,以及拓扑量子相变等方面所表现出来的新奇的物理现象、简要的理论处理和可能的应用前景;最后给出二维六角晶体材料相关研究的总结和展望。谨以本文献给南京大学建立物理学科100周年。     

Light-modulated electron retroreflection and Klein tunneling in a graphene-based n-p-n junction

We investigate the electron retroreflection and the Klein tunneling across a graphene-based n-p-n junction irradiated by linearly polarized off-resonant light with the polarization along the x direction. The linearly polarized off-resonant light modifies the band structure of graphene, which leads to the anisotropy of band structure. By adjusting the linearly polarized light and the direction of n-p-n junction simultaneously, the electron retroreflection appears and the anomalous Klein tunneling, the perfect transmission at a nonzero incident angle regardless of the width and height of potential barrier, happens, which arises from the fact that the light-induced anisotropic band structure changes the relation of wavevector and velocity of electron. Our finding provides an alternative and flexible method to modulate electron retroreflection and Klein tunneling.     

Anisotropic refraction and valley-spin-dependent anomalous Klein tunneling in a 1T'-MoS2-based p-n junction

We investigate the transport properties of electron in a 1T'-MoS₂-based p-n junction. The anisotropic refraction of electron is found when the electron beam crosses the p-n junction, which brings the phenomenon of valley splitting without any external fields. Moreover, it is found that the valley-spin-dependent anomalous Klein tunneling, i.e., the perfect transmission exists at a nonzero incident angle of valley-spin-dependent electron, happens when the vertical electric field is equal to the critical electric field. These two peculiar properties arise from the same reason that the tilted band structure makes the directions of wavevector and velocity different. Our work designs a special valley splitter without any external fields and finds a new type of Klein tunneling.