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11.
12.
Thin films of Ti1−xCoxO2 (x=0 and 0.03) have been prepared on sapphire substrates by spin-on technique starting from metalorganic precursors. When heat treated in air at 550 and 700 °C, respectively, these films present pure anatase and rutile structures as shown both by X-ray diffraction and Raman spectroscopy. Optical absorption indicate a high degree of transparency in the visible region. Such films show a very small magnetic moment at 300 K. However, when the anatase and the rutile films are annealed in a vacuum of 1×10−5 Torr at 500 and 600 °C, respectively, the magnetic moment, at 300 K, is strongly enhanced reaching 0.36μB/Co for the anatase sample and 0.68μB/Co for the rutile one. The ferromagnetic Curie temperature of these samples is above 350 K. 相似文献
13.
Teresa uczak Radosaw Pankiewicz Bogusawa ska Grzegorz Schroeder Maria Betowska-Brzezinska Bogumil Brzezinski 《Journal of Molecular Structure》2006,800(1-3):140-145
Novel self-assembled monolayers were obtained on silver using 4,7-diazaheptyl-trimethoxy-silane (SiN) and vinyl-trialkoxy-silane (SiVA, where the alkyl group is 3,6,9,12,15,18,21,24,27,30,33,36,39,42,45,48,51,54,57,60-eicozaoxa- hexaheptaconan). It was shown that thus modified metal surface was protected against electrooxidation. A densely packed monolayer remained stable and did not desorb from the Ag electrode on the potential cycling. The structure of SiN and SiVA as well as their complexes with Li+ cations were calculated and visualised by the AM1d and PM5 semi-empirical methods. 相似文献
14.
Neodymium doped bismuth layer structure ferroelectrics (BLSFs) ceramics CaBi4−xNdxTi4O15 (x=0, 0.25, 0.50, 0.75) were prepared by solid-state reaction method. X-ray diffraction pattern showed that single phase was formed when x=0-0.75. The refined lattice parameters showed that a (b) axes decrease at x=0.25 and increase with more Nd3+ dopant. The effects of Nd3+ doping on the dielectric and ferroelectric properties of CaBi4Ti4O15 ceramics are studied. Nd3+ dopant decreased the Curie temperature linearly, and the dielectric loss, tan δ, as well. The remnant polarization of Nd3+ doped CaBi4Ti4O15 ceramics was increased by 80% at x=0.25, while more Nd3+ dopant decreased the remnant polarization. CaBi3.75Nd0.25Ti4O15 ceramics had the largest piezoelectric constant d33. The structure and properties of CaBi4−xNdxTi4O15 ceramics showed that Nd3+ may occupy different crystal locations when Nd3+ content x is less than 0.25 and more than 0.50. 相似文献
15.
Band bending at the Ni/Si(100)-2×1 interface has been monitored by using Si 2p core level photoemission spectra. Two nickel-induced Si 2p components appear in the initial interaction between Ni and Si(100)-2×1, which is confined at the top surface and the first subsurface layers. At Ni coverage less than 0.0375 ML, Ni atoms prefer the adamantane interstitial sites on the first subsurface, but switch to the pedestal sites on Si dimer rows at higher Ni coverage. The change in the preferred occupation sites of Ni atoms on the Si(100)-2×1 surface strongly affects the amount of band bending shift. The shift towards higher binding energy, when Ni atoms occupy the adamantane interstitial sites, is attributed to metal-induced-gap states. While Ni atoms occupy the pedestal sites, the band bending shift is reduced which is attributed to the passivation of surface states. 相似文献
16.
The anisotropic g-values of defects in hydrogenated microcrystalline silicon prepared by hot-wire chemical vapour deposition have been measured as a function of crystalline volume fraction at room temperature. The defect has been identified as a silicon-dangling bond existing on the surface of crystalline grain. Their anisotropic g-values are discussed in the light of theoretical calculations by Ishii et al. and Ishii and Shimizu. The defect density is also discussed as a function of crystalline volume fraction. 相似文献
17.
Ayan Roy Chaudhuri 《Solid State Communications》2005,133(9):611-614
Bi3.99Ti2.97V0.03O12 (BTV) thin films were grown by pulsed laser deposition at substrate temperatures ranging between 650 and 750 °C. The structural phase, and orientation of the deposited films were investigated in order to understand the effect of the deposition parameters on the properties of the BTV films. As the substrate temperature was increased to 700 °C, the films started showing a tendency of assuming a c-axis preferred orientation, while at lower temperatures polycrystalline films were formed. The Au/BTV/Pt capacitor showed an interesting dependence of the remnant polarization (Pr) as well as dc leakage current values on the growth temperature. The film deposited at 675 °C showed a very large 2Pr of 42 μC cm−2, which is the largest for BTV thin films among the values reported so far. 相似文献
18.
S. Mancini D. Vitali V. Giovannetti P. Tombesi 《The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics》2003,22(3):417-422
We show that the optomechanical coupling between an optical cavity mode and two movable cavity mirrors is able to entangle
two different macroscopic oscillation modes of the mirrors. This continuous variable entanglement is maintained by the light
bouncing between the mirrors and is robust against thermal noise. In fact, it could be experimentally demonstrated using present
technology.
Received 2 September 2002 / Received in final form 10 October 2002 Published online 7 January 2003 相似文献
19.
使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 .俄歇电子能谱证实薄膜组分符合化学配比 ;x射线衍射测量表明刚沉积的薄膜是近非晶的 ,高温退火后发生部分晶化 ;原子力显微镜和扫描电子显微镜检测显示在高温退火前后薄膜均具有相当平整的表面 ,表明薄膜具有优良的热稳定性 ;椭偏测得在 6 0 0nm处薄膜折射率为 2 0 9;电容 电压测试得到的薄膜介电常数为 1 9.这些特性表明高真空电子束蒸发是一种很有希望的制备作为栅介质的HfO2 薄膜的方法 相似文献
20.
We present a variational treatment for the E × e pseudo Jahn-Teller system. Through canonical transformation the electron and phonon states are decoupled. An analytical form is obtained for the ground state energy by scaling transformation. Including both the dynamical displacement of phonon modes and the softening of phonon frequency, this approach yields fairly accurate results for the ground state energy. The energy splitting and Ham's reduction factor are calculated, which also generates fairly good results compared with other perturbation results. We argue that our variational wave function is valid for the weak and intermediate coupling range. 相似文献