Influence of temperature-pressure treatment on heavily hydrogenated silicon surface

Microstructure and related properties of hydrogenated silicon samples, Si:H, treated at high-temperature (HT) up to 1270 K under hydrostatic argon pressure (HP) up to 1.1 GPa are investigated. To prepare Si:H, Czochralski grown 0 0 1 oriented single crystalline Si wafer with 50 nm thick surface SiO₂ layer was heavily implanted with hydrogen using the immersion plasma source of hydrogen ions with energy 24 keV.The surface of HT-HP treated Si:H was characterised by scanning electron microscopy. Reflectivity pattern measurements in the wavelength range of 350-2000 nm have been performed to analyse their surface and bulk properties. The volume averaging method for a model of layer-like structure has been used to simulate the HT-HP treated Si:H. The analysis of Si:H samples suggests the multi-layer structure composed of Si, Si:H, SiO, SiO₂, and of porous Si layers in the sub-surface region. The porous Si:H samples model is in good consistency with experimental data from reflectance measurements.     

Study of fiber optic sugar sensor

Over the last two decades, the fiber optic technology has passed through many analytical stages. Some commercially available fiber optic sensors, though in a small way, are being used for automation in mechanical and industrial environments. They are also used for instrumentation and controls. In the present work, an intensity-modulated intrinsic fiber optic sugar sensor is presented. This type of sensor, with slight modification, can be used for on-line determination of the concentration of sugar content in sugarcane juice in sugar industry. In the present set-up, a plastic fiber made of polymethylmethacrylate is used. A portion of the cladding (1 cm, 2 cm, 3 cm) at the mid-point along the length of the fiber is removed. This portion is immersed in sugar solution of known concentration and refractive index. At one end of the fiber an 850 nm source is used and at the other end a power meter is connected. By varying the concentration of sugar solution, the output power is noted. These studies are made due to the change in refractive index of the fluid. The device was found to be very sensitive which is free from EMI and shock hazards, stable and repeatable and they can be remotely interfaced with a computer to give on-line measurements and thus become useful for application in sugar industries.     

用力敏传感器测量液体表面张力系数

利用力敏传感器测量液体表面张力系数，既改进了传统的实验方法和仪器，提高了实验的准确度和稳定性，同时因实现了非电量电测，也有助于测量过程中学生对物理过程的观察和规律的理解。     

微型硅谐振式力传感器的振动分析

介绍了谐振式力传感器的工作原理，并从理论上和实验上对中科院合肥智能所研制的第一代微型硅谐振梁（３×０．４×０．０４５ｍｍ＾３）式测力传感器进行了全面的振动分析，所得结构为其进一步优化设计提供了科学根据，文中使用的实验分析方法，为其它微小物体的动态和识别提供了一条有效途径。     

钢卷尺刻度在线测量系

本文介绍了一种钢卷尺刻度在线测量系统 ,它采用了高速摄像及计算机数据处理技术 ,文章阐述了系统的非接触动态测量原理 ,描述了光电信号的处理方法 .     

Sr1-xLaxTiO3的高温高压合成及XPS研究

 利用高温高压方法合成了有稀土元素La掺杂的钙钛矿氧化物Sr_1-xLa_xTiO₃。XRD测试表明，在x≤0.5时，样品基本为单相，呈立方相；晶胞体积随x的增加而增加，在x=0.4时开始减小。XPS测量发现，样品中存在Ti离子的变价。讨论了Ti离子价态的变化对晶格参数的影响。     

Nd2O3掺杂对SnO2气敏性质的影响

SnO_2是目前应用最广的一种气敏材料。我们曾经报道掺入La_2O_3,CeO_2,Pr_6O_(11),和Nd_2O_3后可使半导体元件的灵敏度提高,尤以对乙醇、乙醚、丙酮为显著。掺Nd_2O_3元件对乙炔的灵敏度也有提高。本文考察了SnO_2粒度和被测气氛的物化性质对掺Nd_2O_3元件灵敏度的影响。SnO_2采用水解SnCl_4法制备,纯度经光谱分析测定合格,试样用标准筛分目。在SnO_2中加1wt%Nd_2O_3(光谱纯)和适量水及甲基纤维素,混磨15分钟。将制成的悬浊液滴在一对铂     

Γ andX bandgap hydrostatic deformation potentials for epitaxial In0.52Al0.48As on InP(001)

The pressure dependence of the direct and indirect bandgap of epitaxial In_0.52Al_0.48As on InP(001) substrate has been measured using photoluminescence up to 92 kbar hydrostatic pressure. The bandgap changes from Γ toX at an applied pressure of ∼ 43 kbar. Hydrostatic deformation potentials for both the Γ andX bandgaps are deduced, after correcting for the elastic constant (bulk modulus) mismatch between the epilayer and the substrate. For the epilayer we obtain and+(2.81±0.15)eV for the Γ andX bandgaps respectively. From the pressure dependence of the normalized Γ-bandgap photoluminescence intensity a Γ-X lifetime ratio, (τ_Γ/τ _X ), of 4.1×10⁻³ is deduced.     

Pressure and temperature effects on the excess deuteron and proton conductance

The limiting molar conductances ° of deuterium chloride DCl in D₂O were determined as a function of pressure and temperature in order to examine the proton-jump mechanism in detail. The excess deuteron conductances °_E(D ⁺), as estimated by the equation [°_E(D ⁺) = °(DCl/D ₂ O) – °(KCl/D ₂ O)], increases with an increase in the pressure and temperature as well as the excess proton conductance [°_E(H ⁺) = °(HCl/H ₂ O) – °(KCl/H ₂ O)]. The isotope effect on the excess conductances, however, depends on the pressure and temperature contrary to the model proposed by Conway et al.: °_E(H ⁺)/°_E(D ⁺) decreases with increasing pressure and temperature. The magnitude of the decrease with pressure becomes more prominent at lower temperature. These results are discussed in terms of the pre-rotation of adjacent water molecules, the bending of hydrogen bonds with pressure, and the difference in strength of hydrogen bonds between D₂O and H₂O.