Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

Yb:FAP和Yb:C3S2-FAP晶体光谱的温度特性和选择激发

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第一届掺杂纳米材料发光性质学术会议

该会议为中国物理学会发光分会、中国稀土学会发光专业委员主办的国内首次纳米材料发光性质专题学术研讨会，旨在通过大会报告、专题研讨等活动，总结、交流近年来掺杂纳米发光材料及其相关应用领域所取得的研究进展和成果。在此基础上凝练科学目标、探讨和规划未来的学科发展方向并集中国内的优势资源攻克难点的科学问题，使我国在该研究领域更具国际竞争力。会议诚邀请该领域知名的专家和学者参加；在探索纳米世界之余，也将带您领略海南美丽而独特的自然景观和人文奇迹。     

Practical absorption limits of MPP absorber

The construction and properties of microperforated panel (MPP) absorber are discussed. The absorption limit of the absorber had been shown that low values of the perforate constant k = d(f/10)1/2 and the orifice diameter d (in mm) are essential for MPP to have high absorption in wide frequency band. To find the exact limits, take 1 for k as a start, because both specific resistance and high absorption require k around one. And the orifice diameter d is chosen as 0.1 mm, so that the peak absorption coefficient (resonance absorption) is at 1000 Hz, and high sound frequency may be in the absorption region. Is it possible for a single layer of such an MPP to cover the whole absorption region required in practice? The half-absorption limit is not a good criterion, because low absorption comes in also in some cases. The 0.5 absorption coefficient limit is suggested for practical region, as a standard for comparison. Absorption curves were drawn for different load resistances, of absorption coefficients versus frequency. Ordinary MPP absorber absorbs in slightly over two octaves, and the new absorber with r = 1 (specific resistance equal to the characteristic impedance in air)is slightly better than these, 2.5 octaves. The new absorbers with r > 1, are much better than these, and some satisfies high absorption in broad frequency range. Realization of these will mean great progress of MPP absorbers.     

精密垫片精冲工艺有限元分析与模具设计

精密垫片零件，如图1所示，零件材料为1Cr18Ni9Ti，强度大（σb=650MPa），有一定塑性。从零件尺寸精度看，φ4mm外圆为IT7级精度，φ4mm外圆与φ2mm内孔有很高的同轴度要求，冲裁断面与零件两端面有垂直度要求，普通冲压不能达到零件精度：从工序的角度看，有冲孔和落料工序，剪切面粗糙度Ra≤3．2μm，属于光洁冲裁范畴；另外，技术条件中要求零件两大面不得有任何划伤，且光滑平整。总体上看，该零件的冲压加工性不好，难度较大，对模具的设计、选材、制造要求都较高。     

CHBr薄膜制备的初步研究

碳氢（cH）及其掺杂材料常被用作ICF实验靶丸烧蚀层材料。制备CH薄膜及其掺杂材料的方法有很多，诸如：离子束辅助沉积、离子溅射沉积、低压等离子体化学气相沉积（LPPCVD）等。近年来，详细研究了LPPCVD法制备CH薄膜的制备方法与工艺，形成了比较成熟的技术路线与工艺路线，并为“神光”实验提供了一系列实验靶丸。     

Activation and Afterheat Calculation Analysis for TBM

Safety considerations of TBM are part of the design process to ensure that the TBM do not adversely affect the safety of ITER. So accurate calculations of all radioactivity and potential harmfulness are very important for designing of device, selecting of blanket and shield material, analyzing of the safety and environment, disposing of nuclear waste and operation of the reactor.     

Li(AlxCo1-x)O2晶体中Co3+电子态的变化及对结构演化的影响

研究了应用于锂二次电池正极的新型高能量密度存贮材料Li(AlxCo1-x)O2 (x=01—05)的磁性.发现Al3+的掺杂可导致Co3+中d电子自旋态发生变化，即有部分d电子进入高自旋态.伴随Co3+中电子状态的改变，材料结构演化也发生了相应变化，表现为c/a比增大明显减缓，较好地解释了材料结构对Vegard定律的正偏离.这对材料的微观结构与性能设计具有重要意义. 关键词： 锂电池材料 Li（AlxCo1-x）O2 磁性 自旋态 结构演化     

微波吸收法研究Mn,Cu掺杂对ZnS:Mn,Cu光生载流子复合过程的影响

采用微波吸收法，测量了ZnS:Mn,Cu粉末材料受到超短脉冲激光激发后，其光生电子和浅束缚态电子的衰减过程.发现Mn,Cu的浓度对导带电子的寿命有明显的影响，提高掺杂浓度会使光生电子的寿命大大缩短，还研究了掺杂浓度对光致发光强度的影响. 关键词： 发光材料 硫化锌 光电子 微波吸收技术