GaN半导体中InN量子点的结构性质

采用第一性原理模拟计算纤锌矿结构GaN半导体中InN量子点的结构性质。建立64和128个原子的超原胞量子点模型,进行结构优化以获得稳定的吻合实际的系统,并模拟分析电子结构。从态密度空间分布图看到不同轴向的量子势阱形状各异、深度不一,说明量子点的限域效应存在着各向异性的特点。c轴极化方向引起量子点结构带边的弯曲形状与传统的量子阱结构不同,使得电子空穴没有发生空间分离,有利于电子空穴的跃迁几率的提高。     

Chaotic Dynamics of a Periodically Modulated Josephson Junction

We study the chaotic dynamics of a periodically modulated Josephson junction with damping. The general solution of the first-order perturbed equation is constructed by using the direct perturbation technique. It is theoretically found that the boundedness conditions of the general solution contain the Melnikov chaotic criterion. When the perturbation conditions cannot be satisfied, numerical simulations demonstrate that the system can step into chaos through a period doubling route with the increase of the amplitude of the modulating term. Regulating specific parameters can effectively suppress the chaos.     

Josephson Effect of Dilute Bose-Einstein Condensates in Laser-Modulated Double Wells

The Josephson effect of Bose condensates with a weak link created by superposing a far-off-resonant red-detuned laser beam on a double-well potential is theoretically considered. The numerical simulations show that there would be c/ear Josephson effect for this sort of three-well system. The present work gives a feasible scheme to study a new type of weak link which is crucial to investigate experimentally the Josephson effect.     

Numerical Simulation of the Elastic Shrinkage Induced by Portevin-Le Chatelier Effect

A new one-dimensional phenomenological model based on the dynamic strain aging mechanism is developed. In order to account for the elastic shrinkage induced by the Portevin-Le Chatelier effect, elastic deformation is considered under the boundary conditions of the present model. The simulated results are found to be in good agreement with the experimental observations.     

Long-Time Dynamical Behaviour of Alternative-Current Stark Effect

We report the long time dynamical behaviour of ac Stark effect in a simple quantum model in which two level atoms interact with quantized coherent radiation field. A new phenomenon of periodic quantum collapse and revival of the ac Stark shift of energy level due to ac Stark effect is expressed accurately by analysing the phase of transition probability amplitude. The analytic prediction is confirmed by the numerical results.     

MOSFET辐照诱生界面陷阱形成过程的1/f噪声研究

基于界面陷阱形成的氢离子运动两步模型和反应过程的热力学平衡假设,推导了金属-氧化物-半导体-场效应晶体管(MOSFET)经历电离辐照后氧化层空穴俘获与界面陷阱形成间关系的表达式.利用初始1/f噪声功率谱幅值与氧化层空穴俘获之间的联系,建立了辐照前的1/f噪声幅值与辐照诱生界面陷阱数量之间的半经验公式,并通过实验予以验证.研究结果表明,由于辐照诱生的氧化层内陷阱通过与分子氢作用而直接参与到界面陷阱的建立过程中,从而使界面陷阱生成数量正比于这种陷阱增加的数量,因此辐照前的1/f噪声功率谱幅值正比于辐照诱生的界面陷阱数量.研究结果为1/f噪声用作MOSFET辐照损伤机理研究的新工具,对其抗辐照性能进行无损评估提供了理论依据与数学模型.     

Nd0.67Sr0.33MnOy(Y＜3.0)中的自旋相关电致电阻效应

用固相反应法制备系列Nd0.67Sr0.33MnOy(y=3.00-2.80)多晶样品.样品输运性质表现出自旋相关电致电阻特征.对氧含量等于化学计量样品,在测量温度范围内电阻不随负载电流变化,I-V曲线符合线性欧姆定律.对氧含量低于化学计量样品,当高于某一特征温度时,电阻变化符合线性欧姆定律;但低于这一特征温度时,电阻大小与负载电流有关,I-V曲线偏离线性规律;在绝缘体-导体相转变点附近,样品电阻随负载电流增大而迅速减小,表现出巨大电致电阻效应.对于y=2.85样品,当电流从1μA增加到30μA时,电致电阻接近80%.这种自旋相关的电致电阻行为与氧含量和界面有很大关系.     

应力导致InAs/In0.15Ga0.85As量子点结构中 In0.15Ga0.85As阱层的合金分解效应研究

利用固源分子束外延技术,在In0.15Ga0.85As/GaAs量子阱生长了两个InAs/In0.15Ga0.85As量子点(DWELL)样品.通过改变其中一个InAs DWELL样品中的In0.15Ga0.85As阱层的厚度和生长温度,获得了量子点尺寸增大而且尺寸分布更均匀的结果.结合光致发光光谱(PL)和压电调制光谱(PzR)实验结果,发现该样品量子点的光学性质也同时得到了极大的优化.基于有效质量近似的数值计算结果表明:量子点后生长过程中应力导致In0.15Ga0.85As阱层合金分解机理是导致量子点尺寸和光学性质得到优化的主要原因.     

一维随机激光器中准态模的饱和特性研究

针对随机激光器的半经典理论是应用电磁场时域有限差分法数值求解半经典随机激光模型方程组，基于半经典理论数值研究了一维随机激光器中准态模式的饱和特性，获得了不同准态模的空间分布和频谱分布图。计算结果分析显示：准态模式的某些特征参数如局域程度将会影响系统的饱和特性。利用这一结果，可以通过单频抽运方法选择具有低阈值、高饱和强度的准态模式作为整个激光系统的稳态输出模式。     

利用PVDF传感器检测激光超声的实验研究

简要介绍了激光超声技术以及声表面波的基本特点、激光超声产生和接收的基本原理及激光超声技术的应用。概述了聚偏二氟乙烯（PVDF）压电薄膜材料的结构、性质和应用，以及薄膜压电性产生的机理。对PVDF换能器的设计思路和实验方法进行了简单讨论。具体实验采用脉冲激光器激发声表面波，利用PVDF传感器接收实验信号，调试实验信号，得出波形，并对实验现象作出初步分析。证实了该实验装置应用于激光超声无损检测的可行性与可靠性。