Influence of Yb-Doped Nanoporous TiO2 Films on Photovoltaic Performance of Dye-Sensitized Solar Cells

Yb-doped TiO2 pastes with different Yb/TiO2 weight ratios are prepared in the sol-gel process to obtain dyesensitized solar cells （DSCs）. The nanocrystalline size of Yb-TiO2 becomes smaller and the lattice parameters change. Lattice distortion is observed and dark current is detected. It is found that a part of Yb existing as insulating oxide Yb2O3 state acts as barrier layers at the electrode-electrolyte interface to suppress charge recombination. A Yb-doped TiO2 electrode applied in DSCs leads to a higher open-circuit voltage and a higher fill factor. How the Yb-doped TiO2 films affect the photovoltaic response of DSCs is discussed.     

Practical absorption limits of MPP absorber

The construction and properties of microperforated panel (MPP) absorber are discussed. The absorption limit of the absorber had been shown that low values of the perforate constant k = d(f/10)1/2 and the orifice diameter d (in mm) are essential for MPP to have high absorption in wide frequency band. To find the exact limits, take 1 for k as a start, because both specific resistance and high absorption require k around one. And the orifice diameter d is chosen as 0.1 mm, so that the peak absorption coefficient (resonance absorption) is at 1000 Hz, and high sound frequency may be in the absorption region. Is it possible for a single layer of such an MPP to cover the whole absorption region required in practice? The half-absorption limit is not a good criterion, because low absorption comes in also in some cases. The 0.5 absorption coefficient limit is suggested for practical region, as a standard for comparison. Absorption curves were drawn for different load resistances, of absorption coefficients versus frequency. Ordinary MPP absorber absorbs in slightly over two octaves, and the new absorber with r = 1 (specific resistance equal to the characteristic impedance in air)is slightly better than these, 2.5 octaves. The new absorbers with r > 1, are much better than these, and some satisfies high absorption in broad frequency range. Realization of these will mean great progress of MPP absorbers.     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

基片光学特性对薄膜光强透过谱的影响

在考虑基片与空气界面反射率以及基片吸收不能忽略的情况下，对常见的基片上薄膜的光强透过率公式进行了修正，导出了该情况下的透过率公式．以非晶硅薄膜为研究对象，采用模拟计算说明基片光学特性对薄膜光强透过谱的影响．     

复合薄膜透湿率对分子筛吸附性能的影响

分子筛经活化后用复合薄膜包装袋封装存放一定时间后使用，由于水汽缓慢渗透和包装袋微量泄漏的存在，可能使分子筛吸湿，从而直接影响其使用效果和有效期，因此试验研究分子筛产品包装贮存前后吸附性能的变化，以验证理论计算结果，并为分子筛应用提供重要的试验依据。     

CHBr薄膜制备的初步研究

碳氢（cH）及其掺杂材料常被用作ICF实验靶丸烧蚀层材料。制备CH薄膜及其掺杂材料的方法有很多，诸如：离子束辅助沉积、离子溅射沉积、低压等离子体化学气相沉积（LPPCVD）等。近年来，详细研究了LPPCVD法制备CH薄膜的制备方法与工艺，形成了比较成熟的技术路线与工艺路线，并为“神光”实验提供了一系列实验靶丸。     

石墨炉原子吸收法测定化妆品中的砷

在过氧化氢溶液及硝酸镍存在下，用石墨炉原子吸收法测定化妆品中砷的含量，砷的浓度在0-1mg/L时与吸光度线相关，线性方程为A=0.838c 0.003，相关系数为0.99994。对液体和固体化妆品中的砷进行测定，砷的加标回收率为98.3%-98.7%，测定结果的相对标准偏差为0.65%-1.50%。     

障碍平方期权的定价

本讨论了一种变异期权——收益结构为平方的障碍期权，在股票价格服从几何布朗运动的模型下，由带单侧吸收壁的布朗运动的密度和分布函数得到连续障碍平方期权的定价公式．     

红光激发下掺Ho3+氟化物薄膜的上转换发光

利用激光脉冲沉淀法制备了稀土Ho~(3 )掺杂的氟化物薄膜。观测到处于薄膜中的Ho~(3 )离子在632.8nm红光激发下的上转换发射。这些上转换发射包括:~5S_2→~5I_7,~5F_4→~5I_7和~5S_2→~5I_8。     

热丝加热电流对CH薄膜沉积速率和表面形貌的影响

 热丝辅助裂解法是结合气相沉积制备聚对二甲苯薄膜和热丝化学气相沉积而形成的一种制-CH薄膜的新方法。热丝辅助裂解法的最大特点就是在保持低衬底温度情况下可以获得高沉积速率，而热丝加热电流对薄膜沉积速率和薄膜表面形貌具有重要影响。研究表明，热丝加热电流越大，薄膜沉积速率越高，在加热电流9A时，薄膜沉积速率可达0.002mm/min，同时薄膜表面粗糙度随之增加，薄膜表面也开始出现其它元素污染，因此，一般热丝加热电流选择为7A附近。