Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

photoluminescence (PL) lrom one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavitles are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx:H/a-SiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNx:H) thin film. By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNx:H. A linewidth of Δλ=11 nm and a quality factor of Q=69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.     

耦合双原子Jaynes-Cummings模型的腔场谱H

研究了处于激发态的两原子与高Q腔场相互作用单光子过程的腔场谱,给出了初始光场为光子数态、相干态、压缩真空态时的腔场谱数值计算结果,分析了原子间偶极-偶极相互作用强度gα对腔场谱结构的影响.发现真空场Rabi峰,当gα较弱时为4峰,gα较强时为3峰结构;弱场数态(n＞0)时为5峰,强场时为3峰结构.相干态和压缩真空态时,谱结构与光子数分布有关,一般为复杂的多峰结构.结果表明,gα对峰位峰高都有影响,破坏了谱结构的对称性,但这种影响只在真空场和弱场时才较明显.     

量子微腔中腔场衰变对运动原子自发辐射的影响

通过分析环形微腔中单模量子电磁场与低速运动二能级原子相互作用过程中光子与原子质心的动量交换效应，本文详细研究了原子质心的运动多谱勒效应及光子反冲对原子能级自发辐射寿命的影响，本文理论证明了这效应起因子腔壁引起腔模的衰变，在一定条件下，原子质心运动将增强或低原子的自发辐射。     

注入控制铜蒸气激光方向性时间过程测量

实验研究了注入控制对铜蒸气激光非稳腔输出光束质量的影响，从输出光发散角时间分辨过程的测量结果说明注入加速被注入腔内激光发散角的减小过程。由于被注入腔内放大自发辐射的存在，为得到较好的注入控制效果，注入光的脉宽和进入被注入腔的延时必须恰当。     

偶数个多原子Greenberger-Horne-Zerlinger态的制备

提出了一种制备偶数个多原子Greenberger-Horne-Zerlinger态的方案,它是基于原子-腔场相互作用.首先n个分离的腔初始时处于真空态,通过双光子转移,把n个腔制备成数态|2>和真空态|o>的缠结态.随后,与腔场发生共振相互作用的2n个等同的原子被分别送入n个腔,通过相互作用后,2n个原子处于GHZ态,而n个腔仍然处于真空态.     

Momentum Transfer Dependence of Two Types of the Broad Enhancement Phenomena： CO Spectra in the Valence Energy Region

Partial generalized oscillator strength densities of CO molecules related to the excitation of a 5σ or 1π electron are calculated by using multi-scattering self-consistent-field methods.Momentum transfer dependence of two types of the broad enhancement phenomena above the threshold with one-electron character,i.e. shape resonance and non-resonance enhancement,is studied.Our calculations show that the energy position of a non-resonance enhancement is related to the momentum transfer K.Therefore,electron impact based experiments can be used to identify the two types of the broad enhancement phenomena.     

一种新型有机电致微腔结构的双模发射

采用结构Glass／DBR／ITO／NPB／NPB：Alq／Alq／Al制作了有机微腔电致发光器件。将空穴传输材料与发光材料以一定比例混合作为发光层，为了便于对比，在不改变有机层的膜厚的情况下同时制作了传统的异质结微腔器件，发现两种器件的发光光谱有很大不同，器件的复合效率与传统的异质结器件相比也得到了很大提高，这是因为将两种有机材料混合能消除界面势垒，提高器件的复合效率，从而提高了器件的发光性能，实现了微腔双模发射，且两个模式的半峰全宽分别为8nm和12nm。通过进一步优化器件结构可以实现微腔白光发射。     

Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.     

氙灯泵浦新型晶体Nd∶S－VAP调Q激光器腔内倍频研究

采用氙灯泵浦晶体Ｎｄ∶Ｓ－ＶＡＰ，ＫＴＰ晶体腔内倍频，实现了Ｎｄ∶Ｓ－ＶＡＰ晶体０．５３２５μｍ绿光激光ＢＤＮ染料片调Ｑ运转。测量了输出绿光激光的特性及不同腔长和染料片小信号透过率情况下的输出能量及脉冲宽度，给出了染料片调Ｑ腔内倍频的耦合波方程组，数值求解方程组，所得的理论数据与实验结果很好地相符     

聚合物微腔的研制及其特性分析

采用ＢＭＰＰＶ：ＰＶＫ的混合物作国源介质，将其按一定比例溶于氯仿中，并旋涂在具有９９．５％的反射率的ＤＢＲ上，其上蒸发３００ｎｍ的银膜，形成了面发射型微腔结构，其中ＤＢＲ在入射腔面，银膜为反射腔面，在激发波长３３７．１ｎｍ，频率２０Ｈｚ脉宽１０ｎｓ的氮分子激光器泵浦下，光谱明显等窄化，出现４６０ｎｍ和５３０ｎｍ两个比较强的发光峰，主峰国４６０ｎｍ半宽度为７ｎｍ。