基于波谱技术的茶树生长与茶叶品质信息快速检测研究进展

波谱技术快速获取茶树生长和茶叶品质信息对提高茶叶生产信息化、产业化水平,保障茶叶品质和安全具有重要意义。阐述了波谱技术在茶树生长和茶叶品质信息快速检测的研究进展和发展趋势。重点介绍了红外光谱,荧光光谱、拉曼光谱、质谱等在茶树生长信息获取(氮、叶绿素、病虫害信息等)、茶叶品种分类、茶叶分级、茶叶内部品质检测(茶多酚、儿茶素、咖啡碱、氨基酸、农药残留等)、茶饮料和加工品的品质检测以及相关检测设备等方面的研究进展和应用情况,简述了茶树生长信息获取方法、传感仪器和产业化应用的研究和发展趋势。选择合适的预处理和化学计量学方法能有效增加模型效果,减少冗余数据,为基于波谱技术便携式仪器的开发提供可能。基于波谱技术便携式仪器和在线检测仪器开发仍是今后实现该技术应用和推广的重点。首次介绍了波谱技术在茶叶生产加工领域的应用成果和研究进展,涵盖茶树生长、茶叶加工、茶叶和茶加工品品质安全等多方面内容,并论述波谱技术在茶叶产业应用存在问题和将来发展趋势。     

气相爆轰反应中纳米TiO2颗粒的动态收集及微观生长机制

在气相爆轰制备纳米TiO_2实验中,将设计的可移动纳米粉体收集网台内置于爆轰管内,收集到了爆轰反应过程中生成的纳米TiO_2,首次采用实验的方法探讨了气相爆轰制备纳米颗粒的生长机制。经分析发现,网台上与爆轰管壁收集的粉体为金红石相与锐钛矿相TiO_2,且网台上TiO_2的粒径明显小于管壁上收集的TiO_2粒径。网台到爆轰管尾端的距离对颗粒尺寸影响非常显著,距离越近,纳米TiO_2的粒径越小。结合爆轰波/冲击波在爆轰管中的传播规律,基于实验观察,进一步揭示了气相爆轰合成纳米颗粒的生长机制。     

基于伪对称序列的OFDM-PON系统载波间干扰抑制算法EI北大核心CSCD

受多种光纤非线性因素的影响,基于正交频分复用(OFDM)技术的无源光网络(PON)会受到较为严重的载波间干扰(ICI)。为了抑制OFDM-PON系统中的上述问题,构造了一种新的伪对称序列(PST),并提出将该问题转化为求解两个Toeplitz子系统,然后对其中一个子系统的解进行预处理,将其转化为另一子系统的输入,之后利用最小二乘准则对子系统求解,从而达到抑制载波间干扰的目的。在算法实现过程中,利用所构造序列的伪对称特性和快速傅里叶变换(FFT),避免了高阶矩阵直接求逆,从而提升了算法实时性。仿真结果表明,该方法不仅能够有效抑制OFDM-PON系统的载波间干扰,而且能有效提升该算法的实时性能。     

Wavelength tunable passively Q-switched Yb-doped double-clad f iber laser with graphene grown on SiC

A passively Q-switched tunable Yb-doped double-clad fiber laser is demonstrated with graphene epitaxially grown on SiC.The spectral tuning of the Q-switched fiber laser is implemented by rotating a quartz plate filter inside the cavity.The central wavelength of the fiber laser can be continuously tuned from 1038.54 to 1056.22 nm.The maximum pulse energy of 0.65 μJ is obtained at the pump power of 4.08 W,and the corresponding pulse duration and average output power are 1.60 μs and 35 mW,respectively.     

High-strain InGaAs/GaAs quantum well grown by MOCVD

High-strain InGaAs/GaAs quantum wells （QWs） are grown by low-pressure metal-organic chemical vapor deposition （LP-MOCVD）. Photoluminescence （PL） at room temperature is applied for evaluation of the optical property. The influence of growth temperature, V/III ratio, and growth rate on PL characteristic are investigated. It is found that the growth temperature and V/III ratio have strong effects on the peak wavelength and PL intensity. The full-width at half-maximum （FWHM） of PL peak increases with higher growth rate of InGaAs layer. The FWHM of the PL peak located at 1039 nm is 20.1 meV, which grows at 600 ℃ with V/ III ratio of 42.7 and growth rate of 0.96 μm/h.     

Infrared small moving target detection method based on graph matching

We apply graph matching method to detect infrared small moving targets using image sequences. Candidates （interest points） detected in the first frame form one graph and the same candidates in the last frame form another one. The real moving targets are extracted by matching these two graphs. Experimental results demonstrate that the proposed method is robust and efficient to the translation and rotation of the background.     

Structural and physical properties of BiFeO3 thin films epitaxially grown on SrTiO3（001） and polar（111） surfaces

The influence of surface polarity on the structural properties of BiFeO3 （BFO） thin films is investigated. BFO thin films are epitaxially grown on SrTiO3 （STO） （100） and polar （111） surfaces by oxygen plasma-assisted molecular beam epitaxy. It is shown that the crystal structure, surface morphology, and defect states of BFO films grown on STO substrates with nonpolar （001） or polar （111） surfaces perform very differently. BFO/STO （001）is a fully strained tetragonal phase with orientation relationship （001）[100]BFOII（001）[100]STO, while BFO/STO （111） is a rhombohedral phase. BFO/STO （111） has rougher surface morphology and less defect states, which results in reduced leakage current and lower dielectric loss. Moreover, BFO films on both STO （001） and STO （111） are direct band oxides with similar band gaps of 2.65 eV and 2.67 eV, respectively.     

Experimental identification of a comb-shaped chaotic region in multiple parameter spaces simulated by the Hindmarsh–Rose neuron model

A comb-shaped chaotic region has been simulated in multiple two-dimensional parameter spaces using the Hindmarsh-Rose （HR） neuron model in many recent studies, which can interpret almost all of the previously simulated bifurcation processes with chaos in neural firing patterns. In the present paper, a comb-shaped chaotic region in a two- dimensional parameter space was reproduced, which presented different processes of period-adding bifurcations with chaos with changing one parameter and fixed the other parameter at different levels. In the biological experiments, different period-adding bifurcation scenarios with chaos by decreasing the extra-cellular calcium concentration were observed from some neural pacemakers at different levels of extra-cellular 4-aminopyridine concentration and from other pacemakers at different levels of extra-cellular caesium concentration. By using the nonlinear time series analysis method, the determin- istic dynamics of the experimental chaotic firings were investigated. The period-adding bifurcations with chaos observed in the experiments resembled those simulated in the comb-shaped chaotic region using the HR model. The experimental results show that period-adding bifurcations with chaos are preserved in different two-dimensional parameter spaces, which provides evidence of the existence of the comb-shaped chaotic region and a demonstration of the simulation results in dif- ferent two-dimensional parameter spaces in the HR neuron model. The results also present relationships between different firing patterns in two-dimensional parameter spaces.     

Improvement in a-plane GaN crystalline quality using wet etching method

Nonpolar （1120） GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E2 （high） phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E2 （high） peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E2 （high） peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these GaN films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane GaN grown on etched templates, which also illustrates the better optical properties of these samples.     

Sputtering pressure influence on growth morphology,surface roughness,and electrical resistivity for strong anisotropy beryllium film

The strong anisotropy beryllium （Be） films are fabricated at different sputtering pressures by direct current magnetron sputtering. With the increase of pressure, the deposition rate of Be film first increases, and when the pressure exceeds 0.8 Pa, it gradually descends. The X-ray diffraction analysis indicates that Be film is of α-Be phase, its surface always reveals the （101） crystal plane possessing the low surface energy. As for the growth morphology of Be film, the surface is mainly characterized by the fibrous grains, while the cross section shows a transition from a columnar grain to a mixed grain consisting of a cone-shaped grain and a columnar grain as the sputtering pressure increases. The large grain fraction decays exponentially from 75.0% to 59.3% with the increase of sputtering pressure p, which can improve the grain size uniformity. The surface roughness increases due to the insufficient atom diffusion, which is comparable to its decrease due to the etching effect at p 〈 0.8 Pa, while it increases drastically at p 〉 0.8 Pa, and this increase is dominated by the atom diffusion. The electrical resistivity values of Be films range from 1.7 μΩ m to 2.7 μΩ m in the range 0.4 Pa-1.2 Pa, which is 50 times larger than the bulk resistivity.