Growth of Indium Nanorods by Magnetron Sputtering

Indium nanorods are grown on silicon substrates by using magnetron-sputtering technique. Film morphologies and nanorod microstructure are investigated by using scanning electron microscopy, high-resolution transmission electron microscopy （HRTEM）, and x-ray diffraction. It is found that the mean diameter of the nanorods ranges from 30nm to 100nm and the height ranges from 30nm to 200nm. The HRTEM investigations show that the indium nanorods are single crystals and grow along the [100] axis. The nanorods grow from the facets near the surface undulation that is caused by compressive stress in the indium grains generated during grain coalescence process. For low melting point and high diffusivity metal, such as bismuth and indium, this spontaneous nanorod growth mechanism can be used to fabricate nanostructures.     

Microstructure and Optical Properties of AgxO Prepared by Direct-Current Magnetron-Sputtering Method

Two series of AgxO films are prepared on glass substrates by dc magnetron-sputtering method at room temperature and 90℃ under different oxygen to argon gas ratio （OAR） conditions. The mierostrueture is investigated by XRD and SEM in order to obtain the information on the component evolution of AgO＋Ag2O to Ag2O. Its optical properties are investigated by reflectance and absorption spectroscopy to extract the information on metallic and dielectric behaviour evolution of Ag2O, AgO and silver particles and the interband transition. The results indicate that the AgxO film prepared at room temperature is mainly made up of AgO and Ag2 O clusters while Ag2O is the primary component of AgxO prepared at 90℃. The AgxO film mainly consisting of the primary component shows indirect interband transition structure occurring at 2.89eV. Combination of increasing OAR and substrate temperature is an effective method to lower the threshold of thermal decomposition temperature of AgxO and to deal with the bottleneck of short-wavelength optical and magneto-optieM storage.     

Nd0.7Sr0.3MnO3中显微结构相关电致电阻效应

用固相反应和高能球磨合成后续热处理两种方法分别得到钙钛矿结构Nd_0.7Sr_0.3MnO₃氧化物.两种不同方法得到的多晶样品,虽然晶体结构相同,化学成分和晶粒大小相近,但它们电输运性质却表现出很大差异.用固相反应法制得的样品的电阻几乎不随负载电流的变化而变化,即不表现电致电阻行为;而通过高能球磨合成后续热处理方法得到的样品电阻随外加电流增大而急剧减小,出现显著电致电阻效应.产生这种截然不同电输运特性的原因可能与样品的显微结构和界面性质有关. 关键词： 电致电阻效应 显微结构 钙钛矿结构锰氧化物 界面电阻     

基于数字显微全息技术的相位光栅结构测量

以相位光栅为实验对象,开展了基于数字显微全息技术的相位物体三维显微结构信息的再现研究.在Mach-Zender透射式实验系统的基础上,分别采用显微物镜和无透镜放大方式,对相位光栅进行放大,以提高系统横向分辨率.在显微物镜放大系统中,菲涅耳近似数值再现算法与双波长技术相结合,抑制主要系统噪音,获得相位光栅的显微结构三维分布.在无透镜放大数字显微全息系统中,分别利用菲涅耳近似法和卷积方法再现原始物波前,并提出相减法消除系统主要球面误差,获得相位光栅的深度信息.实验结果与Veeco干涉仪测试结果比对表明,光栅周期和深度结构与干涉仪测试数据相符.     

Na+对制备Al4SiC4/Al4O4C复合耐火材料的影响

以焦宝石、活性炭和铝粉为原料,添加Na2CO3制备Al4SiC4/Al4O4C复合耐火材料.采用化学分析、XRD和SEM等测试技术,研究了Na+对材料物相组成和显微结构的影响.结果表明:添加Na2CO3加速了Al2O3和活性炭的反应,促进了Al4O4C的生成.未添加Na2CO3时生成的Al4SiC4晶粒表面光滑,添加Na2CO3后Al4SiC4晶粒粗糙、凹凸,缺陷明显增加.此外,未添加Na2CO3的试样中生成的Al4O4C呈短纤维状,添加Na2CO3后全部转变为细小颗粒.     

基于多元晶粒生长抑制效应的Al2O3-TiC复相陶瓷的制备与性能研究

基于多元晶粒生长抑制效应,利用热压烧结方法制备了细晶高致密的Al2O3-TiC复相陶瓷.研究发现,仅利用第二相TiC的晶界钉扎效应,即使其含量高达30wt;,也不能有效地抑制Al2O3基体的晶粒生长.在TiC作为第二相的基础上,引入微量MgO和Y2O3,通过TiC晶界钉扎、MgO溶质滞阻和Y2O3晶界偏析等多元晶粒生长抑制作用,Al2O3基体晶粒尺寸从5.12 μm显著减小到1.82 μm,Al2O3-TiC复相陶瓷的断裂韧性从3.99±0.18 MPa·m1/2提高到5.24±0.22 MPa·m1/2.研究结果表明:利用多元晶粒生长抑制效应的协同作用,可显著细化Al2O3基复相陶瓷的显微结构,改善其力学性能.     

原位反应烧结法制备MgAlON复合材料

实验原料选用高纯电熔镁砂(粒径3～1 mm);α-Al2O3(活性)微粉(粒径≤5μm);电熔镁铝尖晶石(粒径≤1mm);Al粉(粒径≤0.088 mm);化学纯MgO(粒径≤0.04 μ m)和少量的活性材料,氮化气氛下原位反应制备MgAlON复合材料,考察了氮化烧结后试样的常规性能、物相组成、显微结构.结果表明:1500℃下,氮化气氛中耐火基质料为Al-Al2O3-MgO系的混合粉可以通过原位反应制备MgAlON复合材料;骨料种类的不同,不影响MgAlON矿相的生成.且MgAl2O4-MgAlON材料的烧结性能及氮化效果较好,常温强度也较高.试样骨架结构是骨料大颗粒在烧结中形成的,骨架中填充着反应合成的MgAlON晶粒和骨料小颗粒,使得烧成后的试样内部结构致密;微晶结构以及晶须的存在有利于提高材料的常温力学性能.     

硼酸钙对电瓷结构和性能的影响

研究了硼酸钙掺量对电瓷的相结构、显微结构、电气性能和机械性能的影响.通过不同硼酸钙添加量的电瓷在不同烧结温度条件下的断裂强度、气孔率、电阻率,结合电瓷的晶相结构和显微结构的变化,探讨其构效关系.结果表明:硼酸钙含量的增加或烧结温度升高,电瓷的电阻率和气孔率降低.但当硼酸钙掺量超过10;,烧结温度超过1120℃之后,电阻率和气孔率的变化不明显.电瓷的断裂强度随着硼酸钙的添加而提高,当硼酸钙含量超过10;后开始降低,添加量为10;时电瓷的断裂强度随着烧结温度而提高,1120℃后无显著变化.硼酸钙促进莫来石相的析出,但硼酸钙含量过高时,会促进CaAl2Si2O8形成,降低莫来石相的析出量,并使其形貌从细针状向短柱状和粒状发生转变.硼酸钙掺量恒定时,提高烧结温度可促进细针状莫来石相的生成.