Calculation of Nuclear Deeply Virtual Compton Scattering in HERMES Experiment

We investigate the possibility to acquire information of nuclear generalized parton distribution （GPD） H by studying the deeply virtual Compton scattering （DVCS） off several nuclear targets at the HERMES group （Hadron Electron Ring Accelerator Measurement of Spin）. Two different models are used and developed to demonstrate the leading asymmetry amplitude.A^sinФ LU for coherent-enriched and incoherent-enriched parts with both statistical and systematic uncertainties estimated. It is found that a clear enhancement of ratio of nuclear asymmetry A ^AsinФ to free proton asymmetry A^H,sinФ LU in the coherent-enriched region is expected by both models,and a decrease of the ratio in incoherent-enriched region; both give the information about nuclear modifications. It is also possible to distinguish between those two models even under the limited statistics.     

Depth Dependence of Tetragonal Distortion of a ZnO/Mg0.1Zn0.90/ZnO Heterostructure Studied by Rutherford Backscattering/Channeling

Rutherford backscattering and channeling are used to characterize the structure of a ZnO/Mg0.1Zn0.90/ZnO heterostructare grown on a sapphire （0001） substrate by rf plasma-assisted molecular beam epitaxy. The results show that the Mg0.1Zn0.90 layer has the same hexagonal wurtzite structure as the underlying ZnO layer, and the heterostructure has a good crystalline quality with xmin = 5%, which is the ratio of the backscattering yields of aligned and random spectra in the near-surface region. Using the channeling angular scan around an off-normal （1213） axis in the {1010} plane of both ZnO and MgZnO layer, the tetragonal distortion εT, which is caused by the elastic strain in the epilayer, is determined. The depth dependence of εT is obtained by using this technique. It can clearly be seen that the elastic strain rapidly decreases with the increase in thickness of the ZnO film in the early growth stage and becomes slightly larger in the region of the Mg0.1Zn0.9O layer.     

掺镨GaN薄膜的微结构与光致发光

利用背散射／沟道（RBS／C）技术、原子力显微镜（AFM）和光致发光（PL）谱研究了掺镨GaN薄膜的微结构和可见光发光特性。RBS／C结果表明,注入Pr后,在注入层引入了晶格损伤;注入样品经1050℃退火后,部分损伤得到恢复,但是晶体质量没有恢复到注入前的状态。AFM结果表明,注入Pr后,表面凹凸不平,而且在注入区引起了膨胀,膨胀幅度达到23．368nm左右。PL结果表明,在850—1050℃退火,发光强度按e指数增加;当退火温度达到1050℃,发光强度最强,经过数据拟合可得Pr^3＋的热激活能为5．8eV。     

Uncertainty of the beam energy measurement in the e^＋e^- collision using Compton backscattering

The beam energy is measured in the e^＋e^- collision by using Compton backscattering. The uncertainty of this measurement process is studied by virtue of analytical formulas, and the special effects of variant energy spread and energy drift on the systematic uncertainty estimation are also studied with the Monte Carlo sampling technique. These quantitative conclusions are especially important for understanding the uncertainty of the beam energy measurement system.     

EBSD-XPS法分析磷石膏中杂质物相

磷石膏是湿法磷酸过程形成的固体副产物。磷石膏中含有磷、氟、硅等有害杂质组分,极大影响磷石膏制品的质量和性能,巨量磷石膏堆存严重威胁生态环境和生命安全。确定磷石膏中杂质物相的赋存状态,为磷石膏除杂净化和综合利用提供理论指导,非常重要。以低温干燥后的磷石膏为研究对象,利用X射线荧光光谱（XRF）分析确定磷石膏中杂质元素的组成,结果表明,磷石膏中的杂质元素含量较高的有P,Si,F和Al,含量较低的有Ba,Fe和Mg等。因二水硫酸钙物相强峰对杂质物相峰有较强遮蔽作用,X射线衍射光谱（XRD）分析不能确定磷石膏杂质的物相。利用扫描电子显微镜对磷石膏进行电子背散射衍射（EBSD）分析,根据被检样品衬度的区别探明磷石膏的杂质物相,利用X射线能谱分析（EDS）成分确定杂质物相组成;利用X射线光电子能谱（XPS）对硫酸钙晶体表面以及混合杂质物相作进一步分析。EBSD分析结果表明,磷石膏中杂质物相主要包括二氧化硅、氟硅酸钠、氟硅酸钾、氟磷酸钙、氟化钙、硫酸钡、硫化铁、三氧化二铝等,此外还有硅、铝、磷、氟等杂质混合组成的复盐物相,其中二氧化硅、硫酸钡、硫化铁、氟磷酸钙和三氧化二铝为独立赋存物相,氟硅酸钠和氟硅酸钾的物相则混合分布在硫酸钙晶体之间,氟化钙杂质与硅、铝、磷、氟杂质复盐物相结合赋存。XPS分析结果表明,磷石膏中还存在硅酸钙、氟化铝、氟化镁、硫酸铝、磷酸铝、磷酸钙、磷酸氢钙和磷酸二氢钙等物相,其中磷酸钙、磷酸氢钙、磷酸二氢钙和氟磷酸钙四种物相的特征峰位分布极为接近。采用EBSD-XPS组合分析方法,不仅确定了磷石膏中杂质的物相,还阐明了杂质物相与硫酸钙晶体之间的构效关系。该研究为磷石膏杂质物相分析提供新途径,为磷石膏除杂净化及其综合利用提供坚实的理论依据。     

铜铟镓硒太阳能电池多层膜的结构分析

对于溅射后硒化和共蒸发等方法制备的铜铟镓硒（CIGS）太阳能电池薄膜,利用多种分析方法研究了CIGS多层膜的复杂结构等．研究表明：卢瑟福背散射（RBS）在分析CIGS多层膜方面具有其独特优势和可靠的结果;溅射后硒化方法制备的CIGS薄膜中,Ga和In在CIGS薄膜中呈梯度分布,这种Ga表层少而内层多的不均匀分布与Mo层没有必然关系;RBS和俄歇电子能谱分析（AES）均显示CIGS太阳能电池器件多层膜界面处存在扩散,尤其是CdS与CIGS,Mo与CIGS的界面处;X射线荧光（XRF）结果表明,电池效率最高的CIGS层中In,Ga比例为In：Ga=0．7：0.3;X射线衍射（XRD）结果显示：退火后的CIGS／Mo薄膜结晶品质得到了优化．     

氧离子辐照二氧化钛单晶后的结构与磁性

氧离子辐照二氧化钛单晶可以诱发其铁磁性．辐照后在室温下也能观察到二氧化钛的铁磁性,且对温度依赖性较小．结合X射线衍射实验、卢瑟福背散射/沟道实验、拉曼散射实验谱、电子自旋共振实验谱、超导量子干涉仪实验、单位原子随沟道位移实验,测定了晶格的损伤随辐照流强的增加而增加．发现在氧离子辐照二氧化钛时出现了Ti³⁺替代氧空位(O_V)的缺陷复合体,即形成Ti³⁺-OV复合体．这种缺陷复合体导致了局部(TiO_6-x)的拉曼模式的伸展．说明了Ti³⁺结合一个未成对的3d电子是二氧化钛局部铁磁性的起源.     

A Method of Large—scale Object Forward Compton Scattering Imaging

In the field of Compton scatter imaging,the problem of how to get a meaningful image from large-scale object is still not fully sttled.The difficulty mainly lies in the method of the compensation of the attenuation,Based on the principle of small-angle forward scattering,a new attenuation correction method is deduced in this paper,we can distinguish air from other materials even it is deep inside a large-scale object .To verify our method,we design a model of a one-meter-long object and perform Monte Carlo simulations with MCNP software.     

含有注入信号的双向环形激光场中的驱动效应

用含有背散射和饱和效应的双模激光场的理论模型讨论了背散射和外加注入信号对环形激光场的统计性质的影响。结果表明,背散射可以抑制系统的涨落。对于均匀展宽的双向环形激光场,注入信号可以将其中的弱模光场由非相干光驱动成为相干光,而对于非均匀展宽的环形激光场则没有这种驱动效应。进一步研究发现,这种驱动效应与注入信号的强弱及两模式光场的抽运参量差异△α有关。     

Si衬底上生长的铁硅化合物结构和取向分析

采用分子束外延法分别在650-920 ℃的Si（110）和920 ℃的Si（111）衬底表面生长出铁的硅化物纳米结构,并主要分析了920 ℃高温下纳米结构的形貌、组成相及其与Si 衬底的取向关系. 扫描隧道显微镜（STM）研究表明,920 ℃高温下,Si（110）衬底上生长的铁硅化合物完全以纳米线的形式存在,且其尺寸远大于650 ℃低温下外延生长的纳米线尺寸;Si（111）衬底上生长出三维岛和薄膜两种形貌的铁硅化合物,其中三维岛具有金属特性且直径约300 nm、高约155 nm,薄膜厚度约2 nm. 电子背散射衍射研究表明920 ℃高温下Si（110）衬底上生长的纳米线仅以β-FeSi₂的形式存在,且β-FeSi₂相与衬底之间存在唯一的取向关系：β-FeSi₂（101）//Si（111）;β-FeSi₂ [010]//Si[110];Si（111）衬底上生长的三维岛由六方晶系的Fe₂Si 相组成,Fe₂Si 属于164 空间群,晶胞常数为a=0.405 nm,c=0.509 nm;与衬底之间的取向关系为Fe₂Si（001）∥Si（111）和Fe₂Si[120]//Si[112].