Self-Mixing Interference in Dual-Polarization Microchip Nd：YAG Lasers

The self-mixing interference in dual-polarization microchip Nd: YA G lasers is demonstrated. Under optical feedback, the orthogonal polarization components of the laser would undergo antiphase intensity modulations; at high feedback level, the polarization switching appears. We also observe that the laser self-mixing sensitivity changes periodically with the frequency difference of orthogonal polarizations. An initial theoretical model is put out and agrees well with the experiments. The results are useful for self-mixing sensitivity enhancement and offer a new way of absolute distance measurement.     

Threshold of Non－Destructive Pulse for Pt Tip of STM on Graphite Surface

The experimental relationship between width and amplitude of the non-destructive threshold pulse for Pt tip of a scanning tunneling microscope (STM) on graphite surface have been studied strictly and systematically in a wide range of pulse width for the first time. The threshold curve of amplitude versus width indicates that the amplitude of threshold pulse will increase with the decrease of the pulse width. A more rigorous explanation is suggested to interpret the dependence of threshold pulse amplitude on width. Fitted with the experimental data,a new empirical formula is given, extrapolated from which the threshold pulse amplitude will rise to 50 V when the pulse width decreases to 10ns.     

Auger图示对锰原子共振结构的影响

使用多体微扰理论(many-body perturbation theory，MBPT)计算了锰原子的3p^63d^54s^2→3p^53d^54s^2nd系列里德堡共振结构。在耦合方程方法中考虑了Auger图式，计算表明，Auger图式有效地抑制了3p→nd系列共振结构的发散。     

Preparation of entangled simultaneous nonresonant atomic states through atom-field interaction

A scheme is proposed for generating a three-atom maximal entanglement W state. It is based on the simultaneous nonresonant interaction of atoms with a single-mode cavity field. Our scheme is insensitive to the cavity field, so the cavity field in our scheme can be initially in thermal states.     

小型化长脉冲二极管设计与实验

在长脉冲高功率微波源研究中关键的部件是二极管，由于阴极爆炸发射产生的阴极等离子体的热扩散，为防止二极管短路，长脉冲二极管通常比一般二极管阴阳极间距大，尺寸也相应较大。原有的长脉冲加速器使用的二极管如图1所示，这也是美国BANSHEE加速器采用的二极管结构。使用的二极管是为满足L波段高功率微波器件的需要，产生电子束电压500kV，电流3kA，脉宽1．5μs，束截面内外径为φ5．7，φ7．3cm。现在为了满足开展S波段相对论速调管研究需要，设计了新的小型化二极管，产生电子束环内外直径约φ4.3，φ3．7cm。     

Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices

We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage （I - V） curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.     

铁磁金属量子阱态的共振隧穿

非铁磁金属层中的量子阱态在磁输运过程中的重要性已被广泛认识．铁磁金属层中自旋极化的量子阱态以前并没有详尽的理论研究；实验上也没有清晰地观测到自旋极化量子阱态的隧穿．文章介绍了最近由卢仲毅、张晓光和Pantelides预言的Fe／MgO／FeO／Fe／Cr和其他铁磁量子阱隧道结中的共振隧穿，并解释铁、钴、铬的△1能带的对称性在这种共振隧穿中的作用．     

平面波通过强度不相等的两个δ势垒问题的求解

对平面波通过强度不相等的两个δ势垒（阱）的定态薛定谔方程作了详细的理论计算，得到了此问题的解．讨论了解的物理含义，分析了入射波产生共振透射的条件及其亚稳态的描述方法     

纳米晶Y_2SiO_5∶Eu的浓度猝灭研究

报道了分别用溶胶－凝胶法合成的Ｙ２ＳｉＯ５∶Ｅｕ纳米晶和用高温固相法合成常规尺度的Ｙ２ＳｉＯ５∶Ｅｕ材料的光致发光光谱和猝灭浓度的实验研究．结果表明：纳米Ｙ２－ｘＥｕｘＳｉＯ５比常规尺度的Ｙ２－ｘＥｕｘＳｉＯ５有更高的猝灭浓度和更高的发光亮度．理论分析认为这是由于在纳米材料中能量共振传递被阻断和猝灭中心在各个纳米晶内分布的涨落造成的．这个结果为高亮度的Ｙ２ＳｉＯ５∶Ｅｕ纳米材料的实际开发应用展示了广阔前景．