再谈Minc-Sathre不等式的上下界

用调和平均值、均值不等式之间的关系及对数平均不等式,对Minc-Sathre不等式的上下界进行改进,使结论更精确.     

HTS双饼线圈的加工工艺及实验研究

详细介绍了高温超导双饼线圈的加工工艺和流程,针对绕制时带材弯曲形变使临界电流退化的技术难点,重点阐述了其解决方法。在液氮温度、自场环境下对采用该加工工艺制作的YBCO双饼线圈及Bi2223/Ag双饼线圈进行低温实验,测试其V-I特性曲线。实验结果表明:该工艺制作的双饼线圈性能良好,工艺安全可靠,是合适的。同时,实验测量数据也为线圈在磁体中的进一步应用提供了可靠依据。     

Alternating-current losses in two-layer superconducting cables consisting of second-generation superconductors coated by U-shaped ferromagnetic materials

Alternating-current losses in a two-layer superconducting cable, each layer being composed of 15 closely-spaced rectangular wires made up of second-generation superconductors when the ends of wires are coated by either a non-magnetic or strong ferromagnetic material having a U profile is numerically investigated. Computations are carried out through the finite-element method. The alternating-current losses do not increase significantly if the relative permeability of the coating is increased three orders of magnitude, provided that the current amplitude is less than half of the critical current in a superconducting wire. However, the losses are much higher for ferromagnetic coating if the amplitude of the applied current oscillating at 50 Hz is close to the critical current. The ferromagnetic coating is seen to accumulate the magnetic field lines normally on its surfaces, while the field lines are parallel to the long axes of the wires, leading to more significant flux penetration in the coated regions. This facilitates a uniform low-loss current flow in the uncoated regions of the wires. In contrast, coating with a non-magnetic material gives rise to a considerably smaller current flow in the uncoated regions, whereas the low-loss flow is maintained in the coated regions. Moreover, the current flows in opposite directions in the coated and uncoated regions, where the direction in each region is converse for the two materials.     

线缆系统电磁脉冲效应测量系统研制和试验

分析了实验室瞬态X射线产生的系统电磁脉冲(SGEMP)效应测试所面临的技术问题,提出了解决方法、措施以及实验室模拟瞬态X射线的SGEMP模拟试验方法。通过电子屏蔽、电磁屏蔽、光电隔离、信号对称提取等特殊技术处理,解决了SGEMP效应模拟试验方法和测量系统抗X射线、抗电磁辐射等技术问题,并在大型瞬态X射线模拟源上,测出了瞬态X射线辐照时金属腔内线缆的SGEMP效应波形及幅值。     

基于虚拟中心电流法的 HL-2M快控电源数学模型

针对中国环流器2号M(HL-2M)装置中用于核聚变物理实验等离子体的垂直不稳定性控制的快控电源拓扑结构，充分考虑线圈的自感与互感对输出的影响，构建出数学模型，首次提出并运用虚拟中心电流法，使得控制算法更加简单，采用多输入多输出的控制方法，利用2个参量控制3个变量。本文基于基本供电方案得到多线圈耦合电压，基于快控电源拓扑推导出快控电源电路方程，再将其合并得到最终的线圈电压数学模型，最后进行仿真验证。结果表明数学模型搭建正确，为今后进行进一步计算提供了坚实的基础。     

超薄屏蔽层300 V SOI LDMOS抗电离辐射总剂量仿真研究

本文研究了300 V绝缘体上硅横向双扩散金属氧化物半导体场效应管在电离辐射总剂量效应下的线性电流退化机理,提出了一种具有超薄屏蔽层的抗辐射结构实现线性电流加固.超薄屏蔽层位于器件场氧化层的下方,旨在阻止P型掺杂层表面发生反型,从而截断表面电流路径,有效抑制线性电流的退化.对于横向双扩散金属氧化物半导体场效应管,漂移区上的场氧化层中引入的空穴对线性电流的退化起着主导作用.本文基于器件工艺仿真软件,研究器件在辐照前后的电学特性,对超薄屏蔽层的长度、注入能量、横向间距进行优化,给出相应的剂量窗口,在电离辐射总剂量为0—500 krad(Si)的条件下,将最大线性电流增量从传统结构的447%缩减至10%以内,且辐照前后击穿电压均维持在300 V以上.     

平均值不等式的证明及其应用

n n n设 a1，a2，…，an为正数，若∏i＝1 ai ＝1或∑i＝1 ai ＝1，借助数学归纳法可相应地证明∑ai ≥ n或i＝1 n nn∏ai ≤1．这两个不等式可用于证明平均值不等式，并由此得出三者相互等价．实例说明平均值不等式在求数列极限方面的应用． i＝1     

人的内力做功问题的分析与探讨

在中学物理中常遇到与人的内力做功有关的问题,许多学生甚至部分教师对此感到困惑,不能对其进行正确的解答,笔者就此问题作出分析和探讨.     

Projectile fragment emission in the fragmentation of 56Fe on C,Al and CH2 targets at 471 A MeV

The emission angle and the transverse momentum distributions of projectile fragments produced in the fragmentation of 56Fe on CHs, C and A1 targets at 471 A MeV are measured. It is found that for the same target, the average value and width of the angular distribution decrease with an increase of the projectile fragment charge; for the same projectile fragment, the average value of the distribution increases and the width of the distribution decreases with increasing the target charge number. The transverse momentum distribution of a projectile fragment can be explained by a single Gaussian distribution and the averaged transverse momentum per nucleon decreases with the increase of the charge of projectile fragment. The cumulated squared transverse momentum distribution of a projectile fragment can be explained well by a single Rayleigh distribution. The temperature parameter of the emission source of the projectile fragment, calculated from the cumulated squared transverse momentum distribution, decreases with the increase of the size of the projectile fragment.     

沉积温度对硬质合金表面沉积的SiC薄膜的影响

采用强电流直流伸展电弧等离子体CVD技术,以Ar、H2和四甲基硅烷(TMS)为先驱气体,在YG6硬质合金衬底表面制备了SiC薄膜。实验结果表明:随着沉积温度的升高,薄膜的致密性和平整度提高;但当沉积温度过高时,SiC薄膜的表面开始具有含非晶碳球和呈花瓣状的疏松结构。在合适的沉积温度下,SiC薄膜的致密性和平整度较好,且其具有较好的附着力和一定的强度,而这样的SiC薄膜可以阻止在金刚石涂层沉积过程中硬质合金中含有的Co对金刚石相沉积过程的有害作用。