序列覆盖的闭映射保持可度量性

设f:X→Y是连续的满映射. f称为序列覆盖映射,若{y})是Y中的收敛序列,则存在X中的收敛序列{xn},使得每一xn∈f-1(yn);f称为1序列覆盖映射,若对于每-y∈Y,存在x∈f-1(y),使得如果{yn}是Y中收敛于点y的序列,则有X中收敛于点x的序列{xn},使得每一xn∈f-1(yn).本文研究度量空间序列覆盖的闭映射之构造,否定地回答了Topology and its Applications上提出的一个问题.     

An Arc as the Inverse Limit of a Single Bonding Map of Type N on [0,1]

Let I = [0, 1], c ₁, c ₂ ∈ (0, 1) with c ₁ < c ₂ and f : I⊸I be a continuous map satisfying: are both strictly increasing and is strictly decreasing. Let A = {x ∈ [0, c ₁]∣f(x) = x}, a=max A, a ₁ =max(A\{a}), and B = {x ∈ [c ₂, 1]∣f(x) = x}, b=minB, b ₁ =min(B\{b}). Then the inverse limit (I, f) is an arc if and only if one of the following three conditions holds: (1) If c ₁ < f (c ₁) ≤ c ₂ (resp. c ₁ ≤ f (c ₂) < c ₂), then f has a single fixed point, a period two orbit, but no points of period greater than two or f has more than one fixed point but no points of other periods, furthermore, if A≠φ and B≠φ, then f (c ₂) > a (resp. f (c ₁) < b). (2) If f (c ₁) ≤ c ₁ (resp. f (c ₂) ≥ c ₂), then f has more than one fixed point, furthermore, if B≠φ and A\ {a} ≠φ, f (c ₂) ≥ a or if a ₁ < f (c ₂) < a, f ² (c ₂) > f (c ₂), (resp. f has more than one fixed point, furthermore, if A≠φ and B\{b}≠φ, f (c ₁) ≤ b or if b < f (c ₂) < b ₁, f ² (c ₁) < f (c ₁)). (3) If f (c ₁) > c ₂ and f (c ₂) < c ₁, then f has a single fixed point, a single period two orbit lying in I\(u, v) but no points of period greater than two, where u, v ∈ [c ₁, c ₂] such that f (u) = c ₂ and f (v) = c ₁. Supported by the National Natural Science Foundation of China (No. 19961001, No. 60334020) and Outstanding Young Scientist Research Fund. (No. 60125310)     

Non-expansive Mappings and Iterative Methods in Uniformly Convex Banach Spaces

In this article, we will investigate the properties of iterative sequence for non-expansive mappings and present several strong and weak convergence results of successive approximations to fixed points of non-expansive mappings in uniformly convex Banach spaces. The results presented in this article generalize and improve various ones concerned with constructive techniques for the fixed points of non-expansive mappings.     

基于Zernike多项式表示色域边界的色域映射

在彩色图像的跨媒体复制中,由于不同媒体有不同的色域,所以在大多数情况下色域映射是不可避免的。不论采用何种映射算法,色域映射的第一步是确定有关媒体的色域边界。目前大多数的色域边界都是用一组测量的或用其它方法得到的离散数据来表示的。然而,由于这种表示方式是利用一组离散数据来实施色域映射的两个基本处理(即确定任一指定的等色调面平面中色域的边缘线以及确定色域边界与一条映射线的交点),比较复杂和费时,因此希望找到一种色域边界的解析表达式来解决这一问题。简述了不久前提出的一种解析函数色域边界表示方法,并用实例说明了如何利用这种解析表示(Zernike多项式)来实现上述的边缘线确定和交点确定。最后给出了几种映射算法的色域映射完整过程及其结果。     

集值映射的 RS集逼近

本文研究了取值为 Banach空间中子集的上半连续的集值映射的 RS集逼近问题 ,给出了集值映 射用 RS集逼近的特征和唯一性结果 ,从而推广了他人的结果 .     

THE HEAT FLOWOF HARMONIC MAPS FROM NONCOMPACT MANIFOLDS

1.IntroductionLetMandNbetwoRiemannianmanifoldsofdimensionmandn.Supposetheirmetricsaregivenbydski~giid-c'dxianddsX~h.odu"duo.Letu:M~Nbeasmoothmap.Theenergydensityfunctionofuisgivenbye(u)~g'jCZh.,~Ical'.ThetotalenergyisdefinedbyE(u)=[e(u)dx.iMAmappingu:M~NiscalledaharmonicmapifitisaclassicalsolutionoftheEulerLagrangeequationofE(u)whichcanbewrittenasT"(U(X))~AU"(X) r3.(U(X))ZZg.j~0,whereT(u)iscalledthetensionfieldofu.Thecorrespondingparabolicsystemwithinitialdata"o(x)knownastheheatequ…     

一类大气浅水波方程的近似解

研究了一类非线性浅水波方程，利用同论映射理论和方法，得到了相应系统的近似解. 关键词： 浅水波 非线性 同伦映射 近似解     

傅里叶变换轮廓术中新的相位及高度算法分析

在传统傅里叶变换轮廓术三维面型测量中,为了准确得到被测物体的高度分布,必需保证投影仪出射光瞳和摄像机入射光瞳的连线与参考面平行并且在同一水平面,否则存在较大的误差。着眼于更普通的情况,讨论双瞳连线与参考面成某一夹角时的高度计算,推导出了非平行时的参考面光场及物面变形条纹光场的表达式,并给出了高度映射公式。因而,传统的傅里叶变换轮廓术测量成为角度α=0时的特例。该方法使傅里叶变换轮廓术的测量条件得到了放宽;易于通过移动投影装置或成像装置获取全场条纹;并为在难以实现双瞳与参考面平行的特殊环境下的测量提供了可行的方法。计算机模拟及实验均证实了该方法的有效性。     

(2+1)维非对称 Nizhnik-Novikov-Veselov系统的新映射解及其局域结构

映射法是一种非常经典、有效和成熟的求解非线性演化方程的方法，其最大的特点是可以有多种不同形式的设解，使得最终求得的解丰富多彩. 利用改进的 Riccati 方程映射法和变量分离法，得到了(2+1)维非对称 Nizhnik-Novikov-Veselov 系统的新显式精确解.根据得到的孤波解，构造出该系统的峰孤子和分形孤子等局域结构，研究了两个孤立波的“追碰”现象. 关键词： 改进的映射法 (2+1)维非对称 Nizhnik-Novikov-Veselov 系统 局域结构 “追碰”现象     

A threshold voltage model MOSFETs considering for high-k gate-dielectric fringing-field effect

In this paper, a threshold voltage model for high-k gate-dielectric metal-oxide-semiconductor field-effect transistors （MOSFETs） is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-k gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-k gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.