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51.
对掺有镉、硒、硫的玻璃在500—800℃退火2—24h,生长了不同尺寸的CdSxSe1x纳米晶体.用分光光度计和光致发光光谱(PL)分析了纳米晶体的性能.退火温度低于550℃,纳米晶体处于成核阶段,600—625℃处于正常扩散生长阶段,700—800℃处于竞争生长阶段;而650℃处于两种生长阶段之间.虽然650℃下生长的纳米晶体的尺寸分布比较窄,但纳米晶体的尺寸随退火时间的延长几乎不变,在该温度改变退火时间很难改变纳米晶体的平均尺寸.在所有样品中出现了深能级缺陷,在650℃退火时间小于4h或大于16h有利
关键词:
纳米晶体
生长机理
深能级缺陷 相似文献
52.
Cr-doped mullites were prepared from single-phase precursors containing up to 9.60 wt% Cr2O3 using a sol-gel technique followed by thermal treatment. Particle induced X-ray emission spectroscopy and X-ray powder diffraction were used to characterize the samples. Mullites were orthorhombic, space group Pbam. Cr doping caused the increase of unit-cell parameters. Strongest expansion was noticed along c-axis followed by a and b (Δc/c=0.089, Δa/a=0.061, Δb/b=0.045% per mole Cr2O3). A second phase, namely θ-(Al,Cr)2O3, was revealed by XRD in the sample containing 9.60 wt% Cr2O3. The structure of mullites was refined by the Rietveld method, location of Cr3+ was performed by the EPR spectroscopy. At low chromium doping level (Cr2O3 content less than ∼5 wt%) Cr3+ ions were substituted for Al3+ in the AlO6 octahedra of the mullite structure (M1 site). For higher doping level, Cr3+ ions were additionally substituted for Al3+ in the AlO6 octahedra of the second phase [θ-(Al,Cr)2O3 at 1400 °C, or α-(Al,Cr)2O3 at 1600 °C] which segregated in the system. Substitution of Cr3+ for Al3+ on M1 site in the mullite structure resulted in increase of average distances in (M1)O6 octahedron and decrease of average distances in T*O4 tetrahedron, while average distances in TO4 tetrahedron stayed almost constant. 相似文献
53.
为了科学构建原油价格波动与国民经济发展的关系,在借鉴国内外专家学者相关模型基础上,考虑不同国民经济指标对油价波动的时滞反馈等因素,构建油价波动对国民经济影响模型.利用原油价格波动对国民经济发展的动态模型,对模型的各部分关系系数进行确定,最后根据所得到的模型对国民经济影响进行实际分析与预测,并得出规避油价波动影响风险的措施. 相似文献
54.
Erik Woldt 《Journal of Physics and Chemistry of Solids》2002,63(4):699-704
The paper investigates whether a change from a homogeneous to an inhomogeneous dislocation distribution, assumed to be caused by a slight additional deformation, can lead to an increase of the recrystallization temperature of a deformed metal. In this case, the higher temperature would indicate a more stable deformation structure despite the increase of stored energy. The recrystallization temperature is related to the growth rate. Hence, the steady state velocity of a recrystallization front moving either parallel or vertically to the stripes of a simplified two-dimensional heterogeneous dislocation distribution of parallel sections of higher and lower dislocation densities is calculated. The results show that if a front growths through the high and low density sections in series an overall slower rate despite higher mean dislocation density is, indeed, possible. However, growing in the parallel arrangement always leads to a higher growth rate compared with the homogeneous case of slightly less stored energy. Since in a real structure the faster growth is likely to succeed, the recrystallization temperature observed will be lowered with additional deformation in accordance with experimental experience. 相似文献
55.
Organically modified solid-state silicates (ORMOSILS) doped with a new laser dye 1,3,5,7,8-pentamethylpyrromethene-2,6-disulfonate-BF2 complex (pyrromethene 556) have been synthesized by a sol-gel method and the compositional effects on pore characteristics, fluorescence and lasing properties have been investigated. It is found that the use of dimethylsulfoxide and γ-glycidoxypropyltrimethoxysilane could greatly change the structure properties of sol-gel derived ORMOSILS cage, and thus the fluorescence and lasing properties of the materials could improve significantly. A successful laser oscillation from this dye-doped ORMOSILS sample has been achieved upon pumping with a Q-switched frequency-doubled Nd:YAG laser at 532 nm. A slope efficiency of 54% with a useful lifetime greater than 10,000 shots has been demonstrated at a pump repetition rate of 1 Hz and a pump intensity of 1 J/cm2 by using the new ORMOSILS cage on our newly designed laser system. Our results have shown that it is possible to obtain a high-efficiency with a long-lifetime for a compact new laser device by low cost dye-doped solid-state ORMOSILS. 相似文献
56.
K. Gowri Navada 《Proceedings Mathematical Sciences》1995,105(3):281-285
We give an estimate for the number of elements in the intersection of topological Sidon sets inR
n with compact convex subsets and deduce a necessary and sufficient conditions for an orbit of a linear transformation ofR
n to be a topological Sidon set. 相似文献
57.
K.R. Murali 《Journal of Physics and Chemistry of Solids》2007,68(12):2293-2296
Zinc oxide (ZnO) films were deposited on glass substrates by the sol-gel dip coating method using acrylamide route. The films were characterized by X-ray diffraction studies which indicated wurtzite structure. Optical absorption measurements indicated band gap in the range 3.17-3.32 eV. XPS studies indicated the formation of ZnO. The resistivity of the films were in the range 1000-10,000 ohm cm. 相似文献
58.
Massimo Camarda Antonino La Magna Francesco La Via 《Journal of computational physics》2007,227(2):1075-1093
A modified Kinetic Lattice Monte Carlo model has been developed to predict growth rate regimes and defect formation in the case of the homo-epitaxial growth of close packed crystalline structures. The model is an improvement over standard Monte Carlo algorithms, which usually retain fixed atom positions and bond partners indicative of perfect crystal lattices. Indeed, we extend the concepts of Monte Carlo growth simulations on super-lattices containing additional sites (defect sites) with respect to those of the reference material. This extension implies a reconsideration of the energetic mapping, which is extensively presented, and allows to describe a complex phenomenology that is out of accessibility of standard stochastic approaches. Results obtained using the Kawasaki and the Bond-Counting rules for the transition probability of the Monte Carlo event are discussed in details. These results demonstrate how the defect types (local or extended), the formation mechanisms and the defect generation regimes can be characterized using our approach. 相似文献
59.
We prove that simply connected open manifolds of bounded geometry, linear growth and sublinear filling growth (e.g. finite filling area) are simply connected at infinity. 相似文献
60.