Structural and spectroscopic analysis of hot filament decomposed ethylene deposited at low temperature on silicon surface

The deposition of decomposed ethylene on silicon wafer at lower temperature using hot filament chemical vapor deposition (HFCVD) method was applied to compose thin film of carbon and its compounds with silicon and hydrocarbon structures. The films were analyzed using Raman spectroscopy, X-ray diffraction, and scanning electron microscopy with elemental microanalysis by energy dispersive X-ray spectrometer. The structure and morphology of the early stage of the film deposition was analyzed. The obtaining of SiC as well as diamond-like structure with this method and catalytic influence of chemical admixtures on the film structure and properties are discussed.     

Magnetic force microscopy studies of domain walls in nickel and cobalt films

A magnetic force microscopy is used to examine the domain walls in nickel and cobalt films deposited by argon ion sputtering. Thin nickel films deposited at high substrate temperatures exhibit coexistent Bloch and Neel walls. Films grown at room temperature display alternative Bloch lines with cap switches. These films agglomerate to form grains after annealed at high temperatures. The film composed of larger grains behaves better nucleation implying magnetic domains of closure, while the film composed of smaller grains exhibits more defects implying alternative Bloch lines. We have also observed domain displacements and cap switches, which occur due to precipitation of particles in small grain size films. Stripe domains are observed for film thicknesses larger than 100 nm. They become zigzag cells when an external field of 1.5 T is applied perpendicular to the surface of the films. This experiment indicates that the domain sizes in thin films and the strip widths for thick films both depend on the square-root of the film thickness, which varies from 5 to 45 nm and from 100 to 450 nm, respectively.     

小间隙高放大多丝室及其放电机制

对以强猝灭气体工作的小间隙多丝室及其放电机制进行了研究,实验表明,因为工作在饱和模式区,这种室同时具有很高的气体放大和相当快的时间特性.文中探讨了放电机制,雪崩中空间电荷效应以及电离光子的产生和作用是重要的因素,而其中后一因素又受到强猝灭气体的抑制.     

Cd-Sn(0.2)-Zn三元合金高压相图的测定

 为了验证三元合金高压相图的计算结果，本文采用高压DTA方法，测定了Cd-Sn-Zn三元系中x_Sn=20 at.%截面的高压垂直截面相图，实验压力为0、0.5、1.0、1.5 GPa。测得的常压相图（p=0 GPa）中其液相线与H. J. Bray的实验结果完全相符，所得高压相图与常压相图比较，在p=1.5 GPa时低共晶点上移了大约35 K，共析组成向富锌端移动了大约8%。     

原伊鲁烷型倍半萜醇芳香酸酯的碳谱研究

作者自人工发酵得到的蜜环菌Armillaria mellea (Vahl.ex Fr.) Quel.菌丝体中分离出十七个原伊鲁烷型倍半萜醇芳香酸翻,在研究这些化合物的化学结构中,对其全去偶碳谱,偏共振谱或INEPT谱,C-H COSY谱和远程C-H COSY谱进行比较仔细地分析,指定了每个化合物各碳的归属,讨论了其碳谱的特征,并指出¹³C NMR谱是对新的该类型化合物结构测定的有效方法.     

一维应变压缩下TC4钛合金绝热剪切研究

 利用内径为57 mm的压缩气炮，在撞击速度为0.2~1.2 km/s（相应的靶中压力为3~15 GPa）范围内进行对称碰撞实验，以研究TC4（Ti-Al6-V4）钛合金在一维应变冲击压缩条件下的绝热剪切现象。对回收得到的受冲击样品，在扫描电镜（SEM）下进行细观金相分析。结果指出，一维应变冲击压缩条件下，TC4钛合金中绝热剪切带产生的对称碰撞速度阈值为500 m/s（相当于样品中的压力为5.87 GPa）；主剪切带与冲击方向约为45°角，带上有圆形和椭圆形两种孔洞且随碰撞速度的增大而增多和长大，这是典型的韧性损伤特征。随碰撞速度增大，产生与主剪切带成15°角的支剪切带。这些与理论预言相符。X射线能谱分析结果指出，剪切带内材料发生了(α+β)→β相的转变，是典型的相变带。剪切带的温度估算与实验提供的信息吻合。     

Paramagnetic defects in BaTiO3 and their role in light-induced charge transport — Optical studies

On the basis of a previous identification of paramagnetic defects in nominally undoped as grown BaTiO₃ single crystals, we have investigated the changes of the concentrations of these centers and their optical absorptions under illumination with light of varying wavelengths. The most pronounced charge transfers occur by hole ionization of Fe⁴⁺ and — to a lesser extent — of Cr⁵⁺ and Cr⁴⁺. At low temperatures the created holes are trapped in the form of O^–-ions next to Al³⁺ or unknown acceptor defects. Corresponding Fe⁴⁺ and O^– absorptions have been identified.     

孤子掺杂光纤放大的半径典模型与分析

建立了孤子掺杂光纤放大的半经典模型，给出了分布放大透明传输的泵浦条件，详细讨论了激发态吸收的影响．文中结果为Ｅｒ￣３＋掺杂光纤孤子放大器的设计提供了重要理论依据．     

Yb原子高激发态的斯塔克光谱

采用ππ偏振激光，通过两步激发和光电离方法，在０－１５４Ｖ／ｃｍ电场范围内，测定了Ｙｂ原子ｎ－１８附近ｍ＝０的斯塔克光谱，首次把包含斯塔克效应的能量矩阵对角化方法推广到Ｙｂ原子，所获得的理论斯塔克图与实验结果基本符合，观察到低场中斯塔克簇随电场增加呈现线性结构以及＾１Ｐ１态与斯塔克簇在抗交叉过程中振子强度发生转移的现象，讨论了结构与量子亏损的关系。     

DISTRIBUTION OF THE（0，∞）ACCUMULATIVE LINES OF MEROMORPHIC FUNCTIONS

Suppose that f(z)is a meromorphic function of order λ（0<λ<+∞）and of lower order μ in the plane.Let ρ be a positive number such that μ≤ρ≤λ.(1)If f^(l)(z)(0≤l<+∞）has p(1≤p<+∞）finite nonzero deficient valnes αi(i=1,…，p)with deficiencies δ（αi,f^(l)),then f(z)has a (0,∞）accumulative line of order ≥ρin any angular domain whose vertex is at the origin and whose magnitude is larger than max(π/ρ，2π-4/ρ ∑i=1^p arcsin √δ（αi,f^(l))/2).(2)If f(z) has only p(0<p<+∞）（0,∞）,accumulative lines of order≥ρ：arg z=θk(0≤θ1<θ2<…<θp<2π，θp+1=θ1+2π）,then λ≤π/ω，where ω=min I≤k≤p(θk+1-θk),provided that f^(l)(z)(0≤l<+∞）has a finite nonzero deficient value.