Realization of Greenberg-Horne-Zeilinger （GHZ） and W Entangled States with Multiple Superconducting Quantum-Interference Device Qubits in Cavity QED

An alternative scheme is proposed for generating the Greenberg-Horne-Zeilinger （GHZ） and W types of the entangled states with multiple superconducting quantum-interference device （SQUID） qubits in a single-mode microwave cavity field. In this scheme, there is no transfer of quantum information between the SQUIDs and the cavity, the cavity is always in the vacuum and thus the requirement on the quality of cavity is greatly loosened. In addition, during the process of the generation of the W entangled state, the present method does not involve a real excitation of intermediate levels. Thus, decoherence due to energy relaxation of intermediate levels is minimized.     

Distributive lattices of numberings

We study into a semilattice of numberings generated by a given fixed numbering via operations of completion and taking least upper bounds. It is proved that, except for the trivial cases, this semilattice is an infinite distributive lattice every principal ideal in which is finite. The least upper and the greatest lower bounds in the semilattice are invariant under extensions in the semilattice of all numberings. Isomorphism types for the semilattices in question are in one-to-one correspondence with pairs of cardinals the first component of which is equal to the cardinality of a set of non-special elements, and the second — to the cardinality of a set of special elements, of the initial numbering. Supported by INTAS grant No. 00-429. __________ Translated from Algebra i Logika, Vol. 46, No. 1, pp. 83–102, January–February, 2007.     

E*-酉范畴逆半群的结构

本文通过定义本原逆半群在集合上的部分作用及其整体化,给出了E*-酉范畴逆半群的结构．     

Hetergeneous-nucleation synthesis of monodisperse ε-cobalt nanoparticles using palladium seeds

Monodisperse bimetallic Pd–Co nanoparticles were prepared via a thermal decomposition of cobalt carbonyl using palladium seeds at the Pd/Co molar ratios 0.5%, 1%, and 5%. The heterogeneously nucleated nanoparticles without any size-selective precipitation are sufficiently uniform to self-assemble into ordered arrays. The as-synthesized nanoparticles are each a single crystal with a complex cubic structure called ε-Co. The presence of Pd seeds seems to improve the stability of Co nanoparticles against oxidation based on the results from time-dependent magnetization measurement.     

Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Large-scale preparation of thin strain-relaxed SiGe is achieved by combining ion implantation and ultrahigh vacuum chemical vapor deposition. The resulting materials were analyzed by double crystal X-ray diffraction, micro-Raman spectroscopy, and tapping mode atomic force microscope. Results revealed that 100-nm-thick Si_0.7Ge_0.3 layers with the diameter of 125 mm and full strain relaxation are successfully prepared by pre-modifying the Si substrates using 50 keV Ar⁺ ions. The strain relaxation is also disclosed to change with both ion species and energy. However, post-modification of SiGe by ion implantation will cause serious damage to the crystal structures, and result in the formation of poly-crystal SiGe.     

Preparing polymer brushes on polytetrafluoroethylene films by free radical polymerization

Films of polytetrafluoroethylene (PTFE) were exposed to sodium naphthalenide (Na/naphtha) etchant so as to defluorinate the surface for obtaining hydroxyl functionality. Surface-initiators were immobilized on the PTFE films by esterification of 4,4′-azobis(4-cyanopentanoic acid) (ACP) and the hydroxyl groups covalently linked to the surface. Grafting of polymer brushes on the PTFE films was carried out by the surface-initiated free radical polymerization. Homopolymers brushes of methyl methacrylate (MMA) were prepared by free radical polymerization from the azo-functionalized PTFE surface. The chemical composition and topography of the graft-functionalized PTFE surfaces were characterized by X-ray photoelectron spectroscopy (XPS), attenuated total reflectance (ATR) FT-IR spectroscopy and atomic force microscopy (AFM). Water contact angles on PTFE films were reduced by surface grafting of MMA.     

Surface modifications of ITO electrodes for polymer light-emitting devices

Surface modifications were performed on the indium tin oxide (ITO) substrates for polymer light-emitting devices, using the different treatment methods including solvent cleaning, hydrochloric acid treatment and oxygen plasma. The influence of modifications on the surface properties of ITO electrodes were investigated by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), contact angle, and four-point probe. The surface energies of the ITO substrates were also calculated from the measured contact angles. Experimental results demonstrate that the surface properties of the ITO substrates strongly depend on the modification methods, and oxygen plasma more effectively improves the ITO surface properties compared with the other treatments. Furthermore, the polymer light-emitting electrochemical cells (LECs) with the differently treated ITO substrates as device electrodes were fabricated and characterized. It is observed that the surface modifications on ITO electrodes have a certain degree of influence upon the injection current, luminance and efficiency, but hardly upon the turn-on voltages of current injection and light emission which are close to the measured energy gap of electroluminescent polymer. Oxygen plasma treatment on the ITO electrode yields the better performance of the LECs, due to the improvement of interface formation and electrical contact of the ITO electrode with the polymer blend in the LECs.     

The magnetic properties of Be-codoped GaMnN grown via molecular beam epitaxy

GaMnN and Be-codoped GaMnN were grown via molecular beam epitaxy using a single GaN precursor and their structural and magnetic properties were examined. X-ray diffraction and superconducting quantum interference device (SQUID) measurements revealed that the grown layers are homogeneous without precipitates. The saturation magnetization of GaMnN has increased from ∼4 to ∼16 emu/cm³ via codoping of Be. The d–d exchange interaction between Mn atoms was discussed for the ferromagnetism of GaMnN.     

Enhanced cleaning of photoresist film on a transparent substrate by backward irradiation of a Nd:YAG laser

Laser cleaning of a photoresist (PR) on a glass substrate using ns-pulsed Nd:YAG laser was studied. The direction of the substrate facing the laser beam was varied as a main parameter as well as the power of the laser beam. The backward irradiation (BWI) of the third harmonic beam (355 nm) completely removed 1.2 μm thick PR layer with three pulses at 1.5 J/cm² leaving no residues behind; while the forward irradiation (FWI) at the same condition just partially cleaned it. To investigate the difference of removal mechanisms between irradiation directions, the size distributions of particulates generated during laser cleaning were observed using an optical particle counter. The concentration of micron-sized particulates increased with increasing laser fluence up to 1 J/cm² for FWI and 0.5 J/cm² for BWI and then decreased at higher fluences because the target was a very thin film. The concentration of larger particulates for BWI was much higher than that for FWI implying the difference in removal mechanisms. In consideration of the size characteristics of the particulates and the temperature profiles of the PR layer, the most probable distinct mechanism for the BWI would be a blasting due to high temperature at the PR/glass interface. The particulate number concentration decreased rapidly after the completion of cleaning, suggesting that the measurement of the particulate concentration could detect the progress of the cleaning. Our results demonstrated that the backward irradiation will be useful for the laser cleaning of film-type contaminants on an optically transparent substrate.     

Effects of UV photon irradiation on SiOx (0 < x < 2) structural properties

Thin films of a-SiO_x (0 < x < 2) were prepared by reactive r.f. magnetron sputtering from a polycrystalline-silicon target in an Ar/O₂ gas mixture. The oxygen partial pressure in the deposition chamber was varied so as to obtain films with different values of x. The plasma was monitored, during depositions, by optical emission spectroscopy (OES) system. Energy dispersive X-ray (EDX) measurements and infra-red (IR) spectroscopy were used to study the compositional and structural properties of the deposited layers.Structural modifications of SiO_x thin films have been induced by UV photons’ bombardment (wavelength of 248 nm) using a pulsed laser. IR spectroscopy and X-ray photoemission spectroscopy (XPS) were used to investigate the structural changes as a function of x value and incident energy. SiO_x phase separation by spinodal decomposition was revealed. The IR peak position shifted towards high wavenumber values when the laser energy is increased. Values corresponding to the SiO₂ material (only Si⁴⁺) have been found for laser irradiated samples, independently on the original x value. The phase separation process has a threshold energy that is in agreement with theoretical values calculated for the dissociation energy of the investigated material.For high values of the laser energy, crystalline silicon embedded in oxygen-rich silicon oxide was revealed by Raman spectroscopy.