Interfacial properties of AlN and oxidized AlN on Si

We report on the characteristics of metal-insulator-semiconductor (MIS) capacitors with aluminum nitride (AlN) as the insulator material. AlN has been grown on (1 1 1) Si by means of molecular beam epitaxy (MBE) and DC magnetron sputtering (SPU). AlN layers have been characterized before and after dry thermal oxidation in O₂. By analyzing changes in morphology and electrical properties, different oxidation mechanisms were identified, due to the crystalline quality difference of the AlN samples. In both cases, oxidation at 1000 °C was beneficial for the electrical characteristics of the MIS structures, presumably due to passivation of atom vacancies. Although AlN was only partially oxidized, the flat-band voltage was reduced and the density of interface traps improved. Dominant conduction mechanism was Poole-Frenkel for the SPU sample, and changed to hopping after oxidation.     

星型建模技术在商业信息系统中的应用

在商场数据仓库构造中，尝试了一种新的增量更新法。在星型模型构造的同时解决了维表的纠错改变和自然改变对数据仓库性能造成的影响。该方法能有效地解决因维表的改变而影响数据仓库性能的问题。     

动态企业建模技术实现及其在ERP中的应用

本文介绍了动态企业建模的原理，技术实现以及在ＤＥＰ中的应用，重点论述了利用ＣＯＭ组件来建立企业业务模型。     

聚类分析在管理信息系统子系统划分中的应用

本文介绍了一种运用聚类分析方法对管理信息系统子系统进行划分的方法，它提高了大系统子系统划分的有效性和科学性。     

Investigation of diode parameters using I-V and C-V characteristics of In/SiO2/p-Si (MIS) Schottky diodes

A study on interface states density distribution and characteristic parameters of the In/SiO₂/p-Si (MIS) capacitor has been made. The thickness of the SiO₂ film obtained from the measurement of the corrected capacitance in the strong accumulation region for MIS Schottky diodes was 220 Å. The diode parameters from the forward bias I-V characteristics such as ideality factor, series resistance and barrier heights were found to be 1.75, 106-112 Ω and 0.592 eV, respectively. The energy distribution of the interface state density D_it was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density obtained using the I-V characteristics had an exponential growth, with bias towards the top of the valance band, from 9.44×10¹³ eV⁻¹ cm⁻² in 0.329-E_v eV to 1.11×10¹³ eV⁻¹ cm⁻² in 0.527-E_v eV at room temperature. Furthermore, the values of interface state density D_it obtained by the Hill-Coleman method from the C-V characteristics range from 52.9×10¹³ to 1.11×10¹³ eV⁻¹ cm⁻² at a frequency range of 30kHz-1 MHz. These values of D_it and R_s were responsible for the non-ideal behaviour of I-V and C-V characteristics.     

地方高校院级学科管理信息系统设计与实现

高校学科信息化建设突飞猛进,传统的管理信息系统已逐显弊端,而地方高校院级学科有其特殊的管理方式,为其量身定做高效的管理信息系统显得尤为重要．提出了一种针对高校院级学科管理的特点,采用微软．NET技术构建的具有三层B／S结构的管理信息系统,阐述了系统从硬件构架到软件构架的一系列解决方案,并对系统功能实现方案及部分关键技术做了详细的分析,提出系统今后的发展方向．     

管理信息系统综合评价的数学模型

本在建立管理信息系统评价指标体系的基础上,通过建立数学模型,研究了管理信息系统的综合评价问题,并用实例加以说明。     

Silicon MIS diodes with Cr2O3 nanofilm: Optical, morphological/structural and electronic transport properties

In this work we report the optical, morphological and structural characterization and diode application of Cr₂O₃ nanofilms grown on p-Si substrates by spin coating and annealing process. X-ray diffraction (XRD), non-contact mode atomic force microscopy (NC-AFM), ultraviolet-visible (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy were used for characterization of nanofilms. For Cr₂O₃ nanofilms, the average particle size determined from XRD and NC-AFM measurements was approximately 70 nm. Structure analyses of nanofilms demonstrate that the single phase Cr₂O₃ on silicon substrate is of high a crystalline structure with a dominant in hexagonal (1 1 0) orientation. The morphologic analysis of the films indicates that the films formed from hexagonal nanoparticles are with low roughness and uniform. UV-vis absorption measurements indicate that the band gap of the Cr₂O₃ film is 3.08 eV. The PL measurement shows that the Cr₂O₃ nanofilm has a strong and narrow ultraviolet emission, which facilitates potential applications in future photoelectric nanodevices. Au/Cr₂O₃/p-Si metal/interlayer/semiconductor (MIS) diodes were fabricated for investigation of the electronic properties such as current-voltage and capacitance-voltage. Ideality factor and barrier height for Au//Cr₂O₃/p-Si diode were calculated as 2.15 eV and 0.74 eV, respectively. Also, interfacial state properties of the MIS diode were determined. The interface-state density of the MIS diode was found to vary from 2.90 × 10¹³ eV⁻¹ cm⁻² to 8.45 × 10¹² eV⁻¹ cm⁻².     

GIS与MIS结合的研究

对GIS对MIS进行了分析，提出将两者结合起业进行研究。论述了这种研究的可行性及必要性，讨论了结合后需解决的几个关键性问题，并给出了具体技巧。     

高速公路管理信息系统开发研究

介绍了马鄂高速公路收费票证管理系统的开发过程，探讨了软件工程生命周期模型进行信息管理系统开发的基本思想和流程， 特别对软件工程生命周期模型实施的７个阶段及其要完成的任务和文档资料进行了详细的讨论．