基于CdSe/ZnS量子点薄膜结构的高双折射光子晶体光纤的色散与损耗控制

基于有限元法,设计了一种六边形排列含CdSe/ZnS量子点薄膜结构的高双折射光子晶体光纤,分析了具有不同厚度CdSe/ZnS量子点薄膜光子晶体光纤的色散及损耗特性.结果表明,含CdSe/ZnS量子点薄膜结构的光子晶体光纤在x和y方向均存在基模.当泵浦光波长逐渐增加时,具有相同厚度CdSe/ZnS量子点薄膜光子晶体光纤的双折射值逐渐增大,x和y方向总色散先增大后减小且存在两个零色散点,损耗逐渐增大并在可见光波段趋近于零;具有不同厚度CdSe/ZnS量子点薄膜光子晶体光纤随CdSe/ZnS量子点薄膜厚度的增加,在相同泵浦光波长处,双折射值逐渐减小,x和y方向总色散逐渐减小且两个零色散点逐渐靠近,损耗逐渐增大.通过沉积不同厚度CdSe/ZnS量子点薄膜和选择合适泵浦光波长,可有效控制光子晶体光纤的色散和损耗.     

A novel graphene nanoribbon field effect transistor with two different gate insulators

In this paper, a novel structure for a dual-gated graphene nanoribbon field-effect transistor (GNRFET) is offered, which combines the advantages of high and low dielectric constants. In the proposed Two Different Insulators GNRFET (TDI-GNRFET), the gate dielectric at the drain side is a material with low dielectric constant to form smaller capacitances, while in the source side, there is a material with high dielectric constant to improve On-current and reduce the leakage current. Simulations are performed based on self-consistent solutions of the Poisson equation coupled with Non-Equilibrium Green's Function (NEGF) formalism in the ballistic regime. We assume a tight-binding Hamiltonian in the mode space representation. The results demonstrate that TDI-GNRFET has lower Off-current, higher On-current and higher transconductance in comparison with conventional low-K GNRFET. Furthermore, using a top-of-the-barrier two-dimensional circuit model, some important circuit parameters are studied. It is found that TDI-GNRFET has smaller capacitances, lower intrinsic delay time and shorter power delay product (PDP) in comparison with high-K GNRFET. Moreover, mobile charge and average velocity are improved in comparison with low dielectric constant GNRFET. The results show that the TDI-GNRFET can provide Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing near their theoretical limits.     

Two-dimensional function photonic crystals

In this paper, we have studied two-dimensional function photonic crystals, in which the dielectric constants of medium columns are the functions of space coordinates , that can become true easily by electro-optical effect and optical kerr effect. We calculated the band gap structures of TE and TM waves, and found the TE (TM) wave band gaps of function photonic crystals are wider (narrower) than the conventional photonic crystals. For the two-dimensional function photonic crystals, when the dielectric constant functions change, the band gaps numbers, width and position should be changed, and the band gap structures of two-dimensional function photonic crystals can be adjusted flexibly, the needed band gap structures can be designed by the two-dimensional function photonic crystals, and it can be of help to design optical devices.     

Spherically Averaged Endpoint Strichartz Estimates For The Two­Dimensional Schrödinger Equation

The endpoint Strichartz estimates for the Schrödinger equation is known to be false in two dimensions[7]. However, if one averages the solution in L2 in the angular variable, we show that the homogeneous endpoint and the retarded half­endoint estimates hold, but the full retarded endpoint fails. In particular, the original verisions of these estimates hold for radial data     

基于公式真度的公式集约简

基于经典命题逻辑的真度理论,讨论了经典命题逻辑系统当中公式集的约简问题。提出了真度约简及α-真度约简的概念,为公式集的约简提供了一种可行的操作方法。     

A characterization of

This work is devoted to the relationship between topological properties of a space and those of (= the space of continuous real-valued functions on , with the topology of pointwise convergence). The emphasis is on -compactness of and on location of in . In particular, -compact cosmic spaces are characterized in this way.

     

最佳跳频序列族的设计与分析

本文提出了基于ｐ元广义ＧＭＷ序列和ｐ元Ｋａｓａｍｉ序列构造跳频序列族的方法,证明了基于广义ＧＭＷ序列所构造的跳频序列族具有最佳Ｈａｍｍｉｎｇ相关特性,而基于Ｋａｓａｍｉ序列所构造的跳频序列族不具有最佳Ｈａｍｍｉｎｇ相关特性。     

Bent函数的一般构造法

本文用概率方法给出小项表示的布尔函数谱的性质,据此得到了Ｂｅｎｔ函数的特征矩阵的等价刻画,原则上给出了Ｂｅｎｔ函数的一般构造法,并为Ｂｅｎｔ函数的计数问题提供了一个模型。文中还提出了Ｂｅｎｔ矩阵的概念,考察了Ｂｅｎｔ矩阵的性质,并借助Ｂｅｎｔ矩阵得到由已知Ｂｅｎｔ函数构造新的Ｂｅｎｔ函数构造新的Ｂｅｎｔ函数的方法。