Analytic hierarchy process for multi-sensor data fusion based on belief function theory

Multi-sensor data fusion is an evolving technology whereby data from multiple sensor inputs are processed and combined. The data derived from multiple sensors can, however, be uncertain, imperfect, and conflicting. The present study is undertaken to help contribute to the continuous search for viable approaches to overcome the problems associated with data conflict and imperfection. Sensor readings, represented by belief functions, have to be fused according to their corresponding weights. Previous studies have often estimated the weights of sensor readings based on a single criterion. Mono-criteria approaches for the assessment of sensor reading weights are, however, often unreliable and inadequate for the reflection of reality. Accordingly, this work opts for the use of a multi-criteria decision aid. A modified Analytical Hierarchy Process (AHP) that incorporates several criteria is proposed to determine the weights of a sensor reading set. The approach relies on the automation of pairwise comparisons to eliminate subjectivity and reduce inconsistency. It assesses the weight of each sensor reading, and fuses the weighed readings obtained using a modified average combination rule. The efficiency of this approach is evaluated in a target recognition context. Several tests, sensitivity analysis, and comparisons with other approaches available in the literature are described.     

Synthesis and Photophysical Properties of a Sc3N@C80‐Corrole Electron Donor–Acceptor Conjugate

Embedding endohdedral metallofullerenes (EMFs) into electron donor–acceptor systems is still a challenging task owing to their limited quantities and their still largely unexplored chemical properties. In this study, we have performed a 1,3‐dipolar cycloaddition reaction of a corrole‐based precursor with Sc₃N@C₈₀ to regioselectively form a [5,6]‐adduct ( 1 ). The successful attachment of the corrole moiety was confirmed by mass spectrometry. In the electronic ground state, absorption spectra suggest sizeable electronic communications between the electron acceptor and the electron donor. Moreover, the addition pattern occurring at a [5,6]‐bond junction is firmly proven by NMR spectroscopy and electrochemical investigations performed with 1 . In the electronically excited state, which is probed in photophysical assays with 1 , a fast electron‐transfer yields the radical ion pair state consisting of the one‐electron‐reduced Sc₃N@C₈₀ and of the one‐electron‐oxidized corrole upon its exclusive photoexcitation. As such, our results shed new light on the practical work utilizing EMFs as building blocks in photovoltaics.     

The character and the wave front set correspondence in the stable range

We relate the distribution characters and the wave front sets of unitary representation for real reductive dual pairs of type I in the stable range.     

Response surface methodology toward the optimization of high-energy carotenoid extraction from Aristeus antennatus shrimp

High-energy assisted extraction techniques, like ultrasound assisted extraction (UAE) and microwave assisted extraction (MAE), are widely applied over the last years for the recovery of bioactive compounds such as carotenoids, antioxidants and phenols from foods, animals and herbal natural sources. Especially for the case of xanthophylls, the main carotenoid group of crustaceans, they can be extracted in a rapid and quantitative way with the use of UAE and MAE.     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

p-Adic函数空间上Hardy型算子的多线性交换子估计

在p-adic域上研究分数次Hardy型算子与CMO(Q_p~n)函数生成的多线性交换子,建立了交换子在Lebesgue空间和Herz空间上的有界性.对Hardy算子的多线性交换子也得到了相应的结果.     

On generalized perfect difference sets constructed from Sidon sets

Let $\mathbb{N}$ be the set of positive integers. For a nonempty set A of integers and every integer u, denote by $d_A(u)$ the number of $(a,a^{\prime })$ with $a,a^{\prime }\in A$ such that $u=a-a^{\prime }$. For a sequence S of positive integers, let $S(x)$ be the counting function of S. The set $A\subseteq \mathbb{N}$ is called a perfect difference set if $d_A(u)=1$ for every positive integer u. In 2008, Cilleruelo and Nathanson (2008) [4] constructed dense perfect difference sets from dense Sidon sets. In this paper, as a main result, we prove that: let $f:\mathbb{N}\to \mathbb{N}$ be an increasing function satisfying $f(n)\ge 2$ for any positive integer n, then for every Sidon set B and every function $\omega (x)\to \infty$, there exists a set $A\subseteq \mathbb{N}$ such that $d_A(u)=f(u)$ for every positive integer u and $B(x/3)-\omega (x)\le A(x)\le B(x/3)+\omega (x)$ for all $x\ge C_{f,B,\omega }$.