钢管混凝土轴心受压构件极限承载力的有限元分析

采用三维虚拟层合单元法，对钢管混凝土和纯混凝土轴心受压构件在轴向荷载作用下产生的稳定承载能力和材料承载能力问题进行了分析比较，同时进一步分析了前者失稳破坏和材料破坏的界限值，模拟了前者第一阶失稳模态，结论与试验结果符合良好。     

总剂量辐照效应对窄沟道SOI NMOSFET器件的影响

本文深入研究了130 nm Silicon-on-Insulator (SOI) 技术下的窄沟道n型metal-oxide-semiconductor-field-effect-transistor (MOSFET) 器件的总剂量辐照效应. 在总剂量辐照下, 相比于宽沟道器件, 窄沟道器件的阈值电压漂移更为明显. 论文利用电荷守恒定律很好地解释了辐照增强的窄沟道效应. 另外, 本文首次发现, 对于工作在线性区的窄沟道器件, 辐照产生的浅沟槽隔离氧化物(STI) 陷阱正电荷会增加沟道区载流子之间的碰撞概率和沟道表面粗糙度散射, 从而导致主沟道晶体管的载流子迁移率退化以及跨导降低. 最后, 对辐照增强的窄沟效应以及迁移率退化进行了三维器件仿真模拟, 仿真结果与实验结果符合得很好. 关键词： 总剂量效应(TID) 浅沟槽隔离(STI) 氧化层陷阱正电荷 SOI MOSFET     

A hybrid fiber-optic/electrical network for launch vehicles

The proposed use of fiber-optic networks in launch vehicles is examined. A data bus architecture is defined, which would replace the mesh network connecting major second-stage avionic packages, in addition to one replacing the take-off minus zero umbilical link from the vehicle to the launch complex. The analysis for a Delta, including bus traffic, cost, and risk factors, led to the selection of n hybrid fiber/electrical network. Candidate termini were tested.     

A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate

In this paper, a novel dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor (DGDI LTIGBT) structure, which features a double extended trench gate and a dielectric inserted in the drift region, is proposed and discussed. The device can not only decrease the specific on-resistance Ron,sp , but also simultaneously improve the temperature performance. Simulation results show that the proposed LTIGBT achieves an ultra-low on-state voltage drop of 1.31 V at 700 A·cm-2 with a small half-cell pitch of 10.5 μm, a specific on-resistance R on,sp of 187 mΩ·mm2,and a high breakdown voltage of 250 V. The on-state voltage drop of the DGDI LTIGBT is 18% less than that of the DI LTIGBT and 30.3% less than that of the conventional LTIGBT. The proposed LTIGBT exhibits a good positive temperature coefficient for safety paralleling to handling larger currents and enhances the short-circuit capability while maintaining a low self-heating effect. Furthermore, it also shows a better tradeoff between the specific on-resistance and the turnoff loss, although it has a longer turnoff delay time.     

Temperature dependence of the sticking coefficient in atomic layer deposition

The temperature dependence of the sticking coefficient (SC) of precursor molecules used in atomic layer deposition (ALD) was investigated. Tetrakis(ethylmethylamino)hafnium (TEMAHf) and Pentamethylcyclopentadienyltitan-trimethoxid (Cp*Ti(OMe)₃) were used in combination with ozone to deposit hafnium dioxide and titanium dioxide films at different substrate temperatures. The SC of TEMAHf was determined at 180, 230, and 270 °C. The SC of TEMAHf depends exponentially on the substrate temperature. The activation energy and the pre-exponential factor were obtained for this ALD process. The SC of Cp*Ti(OMe)₃ was determined at 270 °C. A possible explanation for the small SC of Cp*Ti(OMe)₃ could be the reduced symmetry of the precursor molecule. Therefore, symmetric precursor molecules and high process temperatures appear beneficial for efficient ALD processes.     

Impact of substrate bias on radiation-induced edge effects in MOSFETs

This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation (STI) leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias. Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics.     

An oxide filled extended trench gate super junction MOSFET structure

This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication.     

基于傅里叶变换红外反射谱的DRAM深沟槽结构测量系统研究

提出了一种基于傅里叶变换红外(FTIR)反射谱的动态随机存储器(DRAM)深沟槽结构测量方法与系统。给出了测量原理与方法,设计了测量系统光路。通过可变光阑调节探测光斑大小并选择合适的入射角,消除了背面杂散光反射干扰的影响,大大提高了信噪比。对DRAM深沟槽样品进行反射光谱图测试与实验研究,表明所述方法与系统能够提取出纳米级精度的深沟槽参数。该技术提供了一种无接触、非破坏、快速、低成本和高精度的深沟槽结构测量新途径,在集成电路制造过程中的在线监测与工艺控制方面具有广阔的应用前景。     

钢管混凝土柱-钢梁节点的力学性能分析

基于弹塑性有限元理论建立了钢管混凝土柱-钢梁节点荷载-位移全过程非线性有限元模型,在单元分析中采用改进的AUL表述推导得到梁柱单元刚度矩阵方程,同时考虑了材料的物理非线性和单元的几何非线性,并编制了非线性有限元程序NLFEACFST。采用该模型对相关研究者和作者进行的节点试验进行了分析,理论计算结果与试验结果比较表明,该模型具有很好的适用性和精度。在理论分析模型得到试验结果验证的基础上,对典型的中柱节点进行了荷载-位移全过程非线性特性分析,并对影响节点承载力和荷载-位移骨架曲线的因素进行了参数分析,为进一步从理论研究钢管混凝土框架结构的力学性能创造了条件。     

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal–oxide–semiconductor(MOS) capacitors are investigated by measuring the capacitance voltage and current voltage. The flat-band voltage and interface state density are evaluated by the quasi-static method. It is not effective on further improving the interface properties annealing at 1250℃ in NO ambient for above 1 h due to the increasing interface shallow and fast states.These shallow states reduce the effective positive fixed charge density in the oxide. For the vertical MOS capacitors on the(1120) and(1100) faces, the interface state density can be reduced by approximately one order of magnitude, in comparison to the result of the planar MOS capacitors on the(0001) face under the same NO annealing condition. In addition, it is found that Fowler–Nordheim tunneling current occurs at an oxide electric field of 7 MV/cm for the planar MOS device.However, Poole–Frenkel conduction current occurs at a lower electric field of 4 MV/cm for the trench MOS capacitor. This is due to the local field crowded at the trench corner severely causing the electrons to be early captured at or emitted from the SiO_2/Si C interface. These results provide a reference for an in-depth understanding of the mobility-limiting factors and long term reliability of the trench and planar SiO_2/Si C interfaces.