8-羟基喹啉对甲基苯酚合锌配合物的合成及光致发光和电致发光性能

有机电致发光 ( EL )技术作为一种有着广阔应用前景的显示技术 ,自 1 987年 [1] 以来已获得了空前迅速的发展 .部分发光器件的亮度、效率和寿命已经达到或接近实用化的程度 .许多有机化合物 [2～ 5] ,包括小分子和聚合物 ,已被用于制备有机 LEDs.应用于有机 EL的化合物很多 ,这为优化和筛选优秀的 EL材料提供了基础 .以 8-羟基喹啉铝为代表的有机金属配合物是一类重要的有机 EL材料 ,这类材料荧光效率高、易于提纯且性质比较稳定 .目前应用于有机 EL金属配合物的发光材料大多配位数均为偶数 ,四配位的 8-羟基喹啉锌配合物 ( Znq2 ) [6…     

Photochemical Synthesis and Spectral-Optical Characteristics of ZnO/Cu and ZnO/Ag/Cu Nanoheterostructures

The photoreduction of Cu²⁺ at the surface of ZnO nanoparticles and ZnO/Ag nanostructures was investigated. The spectral characteristics of the obtained ZnO/Cu and ZnO/Ag/Cu composites were studied in relation to the reaction conditions. It was shown that the ZnO/Ag nanoparticles have higher photocatalytic activity in the reduction of Cu²⁺ ions than the individual ZnO particles.     

Enhanced electrodeposition of indium hexacyanoferrate thin films through improved plating solution stability

An ordinary plating solution for indium hexacyanoferrate (InHCF) thin film deposition, mainly composed of equal concentrations of In³⁺ and [Fe(CN)₆]^3–, usually forms precipitates rapidly when either concentration is higher than few millimolar. This contributes to the plating solution's instability. Moreover, electrodeposited capacities are limited accordingly. In this work, the plating solution's stability and the electrodeposition of InHCF were greatly enhanced by adding a large amount of K⁺ and/or H⁺. It was found that a 10-mM plating solution added with 1 M HCl and 1 M KCl could be stored as fresh over a one-week period, whereas an unmodified plating solution became useless within a couple of minutes. Also, such cationic additions, especially adding H⁺, increased the electrodeposited capacity ca. 18 times at least, as compared with that obtained from the unmodified plating solution. Furthermore, related enhancing mechanisms were proposed and verified. To sum up, this study offers a means for better InHCF electrodeposition and should promote the applications of InHCF films. Electronic Publication     

半导体氧化物光催化裂解水制氢

本文综述了半导体氧化物光催化裂解水制氢的反应机理,以及近年来半导体光催化裂解水制氢的研究进展。讨论了各种因素对材料光催化性能的影响以及改性方法,并对今后的研究方向提出了一些建议。     

氧化钨薄膜微型电化学器件的研究

本文论述了WO_3薄膜氢离子敏器件的结构、原理、制备技术和测试分析。利用WO_3薄膜在H+溶液中由绝缘转化为导电特性,成功地研制成氢离子敏器件。这是一种简易而经济的微型pH敏器件技术。     

微波辅助合成发光可调ZnS∶Cu纳米晶

以巯基丙酸(MPA)为稳定剂, 利用微波辐射加热方法制备了水溶性的Cu掺杂的ZnS纳米晶. 通过改变微波条件, 可以在460～572 nm之间实现对ZnS∶Cu纳米晶发射峰位的连续调控. 通过XRD、 UV-Vis、荧光及荧光衰减对ZnS∶Cu纳米晶的结构和发光性质进行了详细探索, 并利用时间分辨荧光光谱对其发光机理进行了初步研究.     

Dynamic optimization problems with bounded terminal conditions

Bounded terminal conditions of nonlinear optimization problems are converted to equality terminal conditions via the Valentine's device. In so doing, additional unknown parameters are introduced into the problem. The transformed problems can still be easily solved using the sequential gradient-restoration algorithm (SGRA) via a simple augmentation of the unknown parameter vector . Three example problems with bounded terminal conditions are solved to verify this technique.This research was supported in part by the National Aeronautics and Space Administration under NASA Grant No. NCC 2-106.     

SnO2TiO2 复合半导体纳米薄膜的研究进展

本文概述了SnO₂TiO₂ 复合半导体纳米薄膜的发展历史和研究现状,对比分析了“混合”、“核壳”和“叠层”3 种复合薄膜的结构和性能特点,着重论述了叠层结构的SnO₂ /TiO₂复合薄膜的光电化学和光催化特性。结合作者的研究工作,探讨了SnO₂ /TiO₂双层复合薄膜上下层厚度对其光催化活性的影响,指出复合薄膜光催化活性的提高可归因于电子从TiO₂ 向SnO₂ 的迁移。最后对SnO₂ /TiO₂复合薄膜的局限性和发展潜势做一简要分析,强调了该复合薄膜本身的应用特点。     

The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon

The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate has been studied. The pyronine-B has been sublimed on the top of p-Si surface. The barrier height and ideality factor values of 0.79±0.04 and 1.13±0.06 eV for this structure have been obtained from the forward bias current-voltage (I-V) characteristics. From the low capacitance-frequency (C-f) characteristics as well as conductance-frequency (G-f) characteristics, the energy distribution of the interface states and their relaxation time have been determined in the energy range of (0.53−E_v)-(0.79−E_v) eV taking into account the forward bias I-V data. The interface state density N_ss ranges from 4.93×10¹⁰ cm⁻² eV⁻¹ in (0.79−E_v) eV to 3.67×10¹³ cm⁻² eV⁻¹ in (0.53−E_v) eV. Furthermore, the relaxation ranges from 3.80×10⁻³ s in (0.53−E_v) eV to 4.21×10⁻⁴ s in (0.79−E_v) eV. It has been seen that the interface state density has an exponential rise with bias from the midgap towards the top of the valence band. The relaxation time shows a slow exponential rise with bias from the top of the valence band towards the midgap.     

Isomorphic electron orbitals for vibronic flexibility in a cyclopropenyl radical molecular device

Summary The vibronic character of this molecular device has been studied using isomorphic electron orbitals. The leading role of the softest vibrational mode for the electron transport process is stressed by the quantum mechanical treatment of the rearrangement operator. The theory was used to investigate the possible function of the soliton valve, which has been suggested as a switching tip. The electronic flexibility of the cyclopropenyl radical with respect to molecular vibrations, which is important for the function of the molecular device, is well characterized by the hardness and softness of the electron structure in terms of the orbital energy-occupation number correlation diagram.