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91.
We investigated the characteristics and the mechanism of Pt/La2O3/Pt resistance switching memory with a set of measurements. The La2O3 films were determined as nano‐poly‐crystalline (diameter of the nanocrystals 5–10 nm) by XRD and HRTEM analysis. The Pt/La2O3/Pt device exhibited excellent resistive switching properties, including low switching voltage (<2 V), large low/high resistance ratio (>108), and good cycling endurance property. The conduction mecha‐ nisms of the Pt/La2O3/Pt device were revealed with current–voltage characteristics, which are different in the low and high resistance states. Furthermore, XPS analysis and temperature‐dependent resistance measurement in the low resistance state showed that the conducting filaments in the Pt/La2O3/Pt device are mainly affected by oxygen defects rather than metallic La. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   
92.
We present a design study of 3D photonic poly‐Si microarchitectures on 2 µm periodically textured glass substrates for application as absorber layers in crystalline Si thin‐film solar cells. Different arrays of microholes and microcones were fabricated in a low‐cost process, by combining high rate electron beam evaporation, nanoimprint technology and self‐organized solid phase crystallization. Two promising designs exhibiting strong absorption enhancement were identified by optical analysis. High angular acceptance and calculated maximum achievable short‐circuit current density of 27.6 mA/cm2 for an effective Si thickness of 1.1 µm highlight the optical potential of these microarchitectures as broadband absorbers in polycrystalline Si thin‐film solar cells.

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93.
We investigate the characteristics of intra‐grain and grain boundary defects in polycrystalline Si films, by employing quantitative electron paramagnetic resonance measurements on liquid phase crystallized layers with an average grain size of 200 µm and tailored solid phase crystallized Si layers with similar intra‐grain morphology but systematically varied grain sizes between 0.25 µm and 1 µm. The defect characteristics are found to be composed of two distinctive g ‐values of g = 2.0055 and 2.0032, which are attributed to grain boundary defects and intra‐grain defects, respectively. Additional hydrogenation leads to a reduction of the overall defect concentration, while a rapid thermal annealing process primarily heals intra‐grain defects.

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94.
本文运用高斯定律得出多晶SiGe栅应变Si nMOSFET的准二维阈值电压模型,并从电流密度方程出发建立了小尺寸应变Si nMOS器件的I-V特性模型.对所得模型进行计算分析,得出沟道Ge组分、多晶Si1-yGey栅Ge组分、栅氧化层厚度、应变Si层厚度、栅长以及掺杂浓度对阈值电压的影响.运用二维器件模拟器对器件表面势和I-V特性进行了仿真,所得结果与模型仿真结果一致,从而证明了模型的正确性. 关键词: 多晶SiGe栅 高斯定理 阈值电压 速度过冲  相似文献   
95.
For polycrystalline silicon (poly‐Si) thin‐film solar cells on ~3 mm borosilicate glass, glass thinning reduces the glass absorption and light leaking to neighbouring cells; the glass texturing of the sun‐facing side suppresses reflection. In this Letter, a labour‐free wet etching method is developed to texture and thin the glass at the same time in contrast to conventionally separated labour‐intensive glass thinning and texturing processes. For 2 cm2 size poly‐Si thin‐film solar cells on glass superstrate, this wet etching successfully thins down the glass from 3 mm to 0.5 mm to check the ultimate benefit of the process and introduces a large micron texture on the sun‐facing glass surface. The process enhances Jsc by 6.3% on average, with the optimal Jsc enhancement of 8%, better than the value of 4.6% found in the literature. This process also reduces the loss in external quantum efficiency (EQE loss), which is due to light leaking to neighbouring cells, dramatically. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   
96.
以Au膜作为催化剂和大晶粒多晶Si薄膜为衬底,利用固-液-固生长机制,制备出直径在30~ 100 nm和长度为几百微米的高密度Si纳米线.实验研究了退火温度、生长时间和N2流量对Si纳米线生长的影响.结果表明,随着退火温度的升高,生长时间的延长和N2流量的增加,Si纳米线的长度和密度都显著增加.对不同生长时间下获得的Si纳米线样品进行了X射线衍射测量,结果显示随着生长时间的延长,多晶Si薄膜和表面的Au膜成分都在减少.光致发光谱则显示出弱的蓝光发射和强的红光发射特性,前者应是由非晶SiOx壳层中的氧空位发光中心引起,后者则应归因于Si纳米线芯部与非晶SiOx壳层之间界面区域附近中的Si =O双键态或非桥键氧缺陷中心.  相似文献   
97.
The transport of Na through the polycrystalline ceramic arc tube of high intensity discharge lamps has been investigated. This complex process consists of several steps: solution in the ceramics, diffusion through the ceramics, leaving the bulk phase, evaporation from the surface. Among the listed processes the kinetics of the diffusion was examined in the temperature range 400-1200 °C, separately from other disturbing effects. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) were used to determine the concentration depth profiles. The obtained results confirmed that the grain boundary diffusion plays an important role in the transport process of sodium through the ceramic wall. The bulk and the grain boundary diffusion coefficients and the temperature dependencies of these transport processes have been determined. The activation energy of Na bulk diffusion is 56.5 ± 6.7 kJ/mol at 900-1200 °C, respectively the activation energies of Na grain boundary diffusion amount to 97.5 ± 21.6 kJ/mol in the temperature range 700-1100 °C and 7.7 ± 4.0 × 10−2 kJ/mol at 400-700 °C. The preexponential factor of the bulk diffusion was found to be Do = 5.1 × 10−15 ± 9.5 × 10−17 cm2/s in the temperature range 900-1200°C, whereas the preexponential factors of grain boundary diffusion are Do = 1.1 × 10−10 ± 1.1 × 10−11 cm2/s at 700-1100 °C and Do = 7.5 × 10-15 ± 1.5 × 10−17 cm2/s at 400-700 °C.  相似文献   
98.
用共蒸发法沉积了ZnTe/ZnTe:Cu复合多晶薄膜,通过XRD,XPS,C-V,I-V等研究了沉积温度对薄膜结构、Cu浓度分布及电池性能的影响.结果表明,沉积温度对薄膜的结构影响不明显,薄膜呈立方相,经185 ℃退火后出现了六方相.对薄膜的剖析发现,Cu浓度分布呈现先上升到一极大值而后快速下降的趋势, 100 ℃沉积的ZnTe/ZnTe:Cu薄膜,ZnTe层起到了阻止Cu扩散作用,用这种薄膜制作的太阳电池XD较大 关键词: ZnTe多晶薄膜 沉积温度 薄膜结构 器件性能  相似文献   
99.
强流脉冲电子束诱发纯镍表层纳米结构的形成机制   总被引:3,自引:0,他引:3       下载免费PDF全文
利用强流脉冲电子束(HCPEB)技术对多晶纯镍进行了表面处理,并采用扫描电镜和透射电镜对强流脉冲电子束诱发的表面及亚表面的微观组织结构进行了分析.实验结果表明,HCPEB辐照后表面熔化,形成了深度约为2 μm的重熔层,快速的凝固使重熔层中形成晶粒尺寸约为80 nm的纳米结构.位于轰击表面下方5—15 μm深度范围内强烈塑性变形引起的位错墙和其内部的亚位错墙结构是该区域的主要结构特征.这些缺陷结构通过互相交割细化晶粒,最终导致尺寸约为10 nm的纳米晶粒的形成. 关键词: 强流脉冲电子束 纳米结构 多晶纯镍 位错墙  相似文献   
100.
The plastic anisotropy of sheet metal is usually caused by preferred orientation of grains, developed by mechanical deformation and thermal treatment. In the present study, a Taylor-like polycrystal model suggested by Asaro and Needleman is applied to investigate the evolution of the anisotropic behavior of a face centered cubic (FCC) polycrystalline metal, which is considered having {111} (110) slip systems, by stretching it along an arbitrary direction after it has undergonea plane-strata compression that rationally simulates the cold rolling process of FCC polycrystalline pure aluminium. By using the Taylor-like polycrystal model, pole figures are obtained to describe the texture development of polycrystalline aggregate after plane-strain compression, and then the plastic anisotropy of polycrystalline aggregate is evaluated by stretching the polycrystalline aggregate in different direction in term of yield stress. According to the results, the contours of longitudinal flow stress in three-dimensional orientation space are given and analyzed. Experiment results similar to the prediction of planar anisotropy can be found inthe literature written by Takahashi et al. that in directly show the correctness of the prediction of non-planar plastic anisotropy by this analysis.  相似文献   
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