热稳定性混合生长型聚晶金刚石研制

本文在分析国内外钻探用聚晶金刚石应用及性能基础上,研制开发耐高温界面生长型聚晶金刚石,采用0.05钴片或钴铁片(5;铁)扩散工艺,对工艺组装制备及合成工艺条件进行详细分析论证,建立一种界面生长型聚晶金刚石合成工艺,由于采用强酸处理方法去除残余金属钴存在处理不彻底及对性能影响大缺陷,通过分析国内外聚晶热稳定性基础上,得出生长型聚晶晶间结构即Co存在状态是提高热稳定性关键,通过降低进入聚晶金属Co含量和改变晶间物相及组成,即主要是改变金属Co存在状态,加入适量金属Ti、W,在扩散生长同时生成新的固溶体-硬质合金,即TiC-Co、 WC-TiC-Co固溶体,从而改变聚晶显微组织中残留Co存在状态,并对样品进行电镜扫描、电子探针分析、转靶X射线衍射分析等分析,研究证明其结构基本是D-D键结合的高晶体,晶粒金刚石之间是D-D键错综连接形成多孔网状结构,产品具有高自锐性和热稳定性,热稳定达到1473K.最后对生长机理进行初步分析,并提出界面生长机理.     

射频放电辅助热丝CVD金刚石生长速率的研究

在传统的HFCVD系统中,引入射频电源后,通过与灯丝或者衬底的连接,组成了射频放电辅助下的四种不同沉积金刚石的生长模式.在各种生长模式下,分别以酒精和丙酮为碳源,沉积出了金刚石多晶球,并就不同辅助模式下的金刚石的生长速率进行了研究.结果表明,等离子体增强法能够明显促进金刚石的生长,而电子促进法的生长速率最慢,甚至慢于偏压等离子体的生长速率;与等离子体促进增强法相比,偏压等离子体增强法的生长速率也有所变慢,并且随着偏压射频电流的增大,其生长速率越来越慢;而传统热丝法的生长速率与沉积金刚石时所选用碳源的分子结构有很大的关系.     

PDC材料烧结中钴在金刚石层中的扩散熔渗迁移过程研究

对不同烧结阶段快速冷却固化的PDC实验样品金刚石层中钴的线分布(EDX)分析结果表明,PDC材料烧结中钴在金刚石层中的运动过程经历了三个基本阶段:(1)钴固相扩散;(2)钴液熔渗;(3)两次钴高浓度峰在金刚石层中的"波浪"式迁移过程.其中第一次钴高浓度峰与金刚石聚晶结构形成密切相关;而第二次钴高浓度峰则与聚晶晶粒异常长大密切相关.钴在金刚石层中的"波浪"式迁移过程是由金刚石-钴系统中金刚石溶解再结晶生长过程造成的,在这一过程中温度梯度grad T和碳浓度差ΔC是钴峰"波浪"式迁移的直接驱动力.     

Gradient nanoscale polycrystalline elasticity: Intergrain interactions and triple-junction conditions

Using the principle of virtual power, we develop general balance equations, interface conditions, triple-junction conditions, and boundary conditions for second-grade nanocrystalline elastic materials undergoing infinitesimal deformations. We further develop thermodynamically consistent constitutive equations and provide a weak formulation of resulting boundary-value problems that automatically yields internal conditions such those that hold across interfaces and at triple junctions.     

Application of principal component analysis to a full profile correlative analysis of FTIR spectra

We have demonstrated an informatics methodology for finding correlations between the full profile Fourier transform infrared spectra of polycrystalline 3C‐silicon carbide (poly‐SiC) films and their growth conditions, thereby developing high‐throughput structure‐process relationships. Because SiC films are a structural element in photonic sensors, this paper focuses on the interpretation of their optical response, the multivariate tracking of critical processing pathways, and the identification of controlling processing mechanisms. Using principal component analysis, we have developed a data analysis tool to aid in the assessment of the relative contributions of experimental parameters in low‐pressure chemical vapor deposition processes to optical responses on the basis of the size of eigenvalues of the spectral data set. The applied methodology for identifying spectral relationships of stoichiometry, dopant chemistry, and microstructure of poly‐SiC provides more effective guidelines to manipulate optical responses by controlling multiple experimental parameters. Copyright © 2011 John Wiley & Sons, Ltd.     

Homogenization estimates for the average behavior and field fluctuations in cubic and hexagonal viscoplastic polycrystals

The “second-order” homogenization procedure (J. Mech. Phys. Solids 50 (2002) 737) is used to compute estimates of the self-consistent type for the effective response of cubic and hexagonal viscoplastic polycrystals with isotropic textures. The method, which requires the computation of the averages of the stress field and the covariances of its fluctuations over the various grain orientations in an optimally selected “linear comparison polycrystal,” is also used to generate information on the heterogeneity of the stress and strain-rate fields within the polycrystals. In contrast with earlier estimates of the self-consistent type, such as those arising from the “incremental” and “tangent” schemes, the new estimates for the effective behavior are found to satisfy all known bounds, even in the strongly nonlinear, rate-insensitive limit. In addition, they are found to satisfy a recently proposed scaling law at large grain anisotropy. The fluctuations of the stresses and strain rates, which are nonzero for all grain orientations, are found to generally increase with decreasing strain-rate sensitivity (i.e., increasing nonlinearity) and with increasing grain anisotropy (which is typically higher for lower-symmetry systems).     

人造多晶冰抗压强度实验研究

对实验室制作的平均粒径为４ｍｍ的宏观各向同性粒状多晶冰，在冰温分别为－０．５、－２、－５和－１０℃及应变率分别为４．２×１０－４、５．５×１０－５、５．５×１０－６及３．５×１０－７ｓ－１下进行了单轴抗压强度实验。结果表明，极限抗压强度与负温和应变率的对数均呈正比例关系；在较高应变率下（４．２×１０－４ｓ－１），在－５℃时，出现韧脆性转折点。     

Effect of surface roughness on the optical constants of bulk polycrystalline gold samples

Four bulk polycrystalline samples of gold were subjected to different polishing treatments using diamond pastes of grain size 10, 6, 3 and 1 μm. The effect of surface roughness on the optical constants n and k is studied by 45° angle-of-incidence ellipsometry at 632.8 nm. Results for n and k are extrapolated to the case of an ideal surface which we believe to be highly representative of gold. Comparison with published results for the optical constants of gold thin films is presented.     

六棱柱状多晶γ-Al2O3的制备、表征及其形成机制研究

以AlCl₃·6H₂O为前驱物,在氨水介质中用水热法制备了具有新颖形貌特征的六棱柱状多晶γ-Al₂O₃颗粒。采用X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)及N₂物理吸脱附等方法对所制备的γ-Al₂O₃颗粒进行了表征,并对其形貌形成机制进行了分析。结果表明,铝前驱物在氨水介质中通过水热处理后,经焙烧可以形成形貌规整的六棱柱状γ-Al₂O₃颗粒,其边长与长度分别约为0.3 μm和2.5 μm。TEM图片显示,六棱柱颗粒是由尺寸在10 nm左右的粒子聚集而成,因而具有多晶γ相特征。所制备的γ-Al₂O₃材料具有发达的孔隙结构,比表面积为274 cm²/g,孔容为0.51 cm³/g,孔径集中分布在5.5 nm周围。研究发现,γ-Al₂O₃六棱柱形貌的形成机制与AlOOH二次粒子在NH₄⁺正电荷作用下发生的最稳态排列形式具有密切的关联。     

The electric and magnetic properties of epitaxially grown A0.5-xLaxSr0.5MnO3 （A=Pr, Nd） thin film

The epitaxial （single crystal-like） Pr0.4La0.1Sr0.5MnO3 （PLSMO） and Nd0.35La0.15Sr0.5MnO3 （NLSMO） thin films are prepared and characterized, and the electric and magnetic properties are examined. We find that both PLSMO and NLSMO have their own optimum deposition temperature （To） in their growing into epitaxial thin films. When the deposition temperature is higher than To, a c-axis oriented but polycrystalline thin film grows; when the deposition temperature is lower than To, the thin film tends to be a-axis oriented and also polycrystalline. The most important point is that for the epitaxial PLSMO and NLSMO thin films the electronic phase transitions are closely consistent with the magnetic phase transitions, i.e. an antiferromagnetic phase corresponds to an insulating state, a ferromagnetic phase corresponds to a metallic state and a paramagnetic phase corresponds to a semiconducting state, while for the polycrystalline thin films the electronic phase transitions are always not consistent with the magnetic transitions.