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Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode 下载免费PDF全文
A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia. 相似文献
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Current in heterogeneous tunnel junctions is studied in the framework of the parabolic conduction-band model. The developed model of the electron tunneling takes explicitly into account the difference of effective masses between ferromagnetic and insulating layers and between conduction subbands. Calculations for Fe/MgO/Fe-like structures have shown the essential impact of effective mass differences in regions (constituents) of the structure on the tunnel magnetoresistance of the junction. 相似文献
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A flashing ratchet model of a two-headed molecular motor in a two-dimensional potential is proposed to simulate the hand-over-hand motion of kinesins.Extensive Langevin simulations of the model are performed.We discuss the dependences of motion and efficiency on the model parameters,including the external force and the temperature.A good qualitative agreement with the expected behavior is observed. 相似文献
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In this paper, a model to calculate the dark current of quantum well infrared photodetectors at high-temperature regime is presented. The model is derived from a positive-definite quantum probability-flux and considers thermionic emission and thermally-assisted tunnelling as mechanisms of dark current generation. Its main input data are the wave functions obtained by time-independent Schrodinger equation and it does not require empirical parameters related to the transport of carriers. By means of this model, the dark current of quantum well infrared photodetectors at high-temperature regime is investigated with respect to the temperature, the barrier width, the applied electric field and the position of the first excited state. The theoretical results are compared with experimental data obtained from lattice-matched InAlAs/InGaAs, InGaAsP/InP on InP substrate and AlGaAs/GaAs structures with rectangular wells and symmetric barriers, whose absorption peak wavelengths range from MWIR to VLWIR. The corresponding results are in a good agreement with experimental data at different temperatures and at a wide range of applied electric field. 相似文献
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针对中国环流器2号M(HL-2M)装置中用于核聚变物理实验等离子体的垂直不稳定性控制的快控电源拓扑结构,充分考虑线圈的自感与互感对输出的影响,构建出数学模型,首次提出并运用虚拟中心电流法,使得控制算法更加简单,采用多输入多输出的控制方法,利用2个参量控制3个变量。本文基于基本供电方案得到多线圈耦合电压,基于快控电源拓扑推导出快控电源电路方程,再将其合并得到最终的线圈电压数学模型,最后进行仿真验证。结果表明数学模型搭建正确,为今后进行进一步计算提供了坚实的基础。 相似文献
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将Mg粉、Zr粉和B粉按比例混合获得Mg1-xZrxB2(x=5%10%和20%),压制成型后,在流通氩气的条件下于800℃烧结2h.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)分析烧结后样品的显微结构和化学组成,采用差热分析(DTA)观察Zr掺杂对MgB2分解温度的影响,并用物性测试仪(PPMS)测试样品的超... 相似文献
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M. Igarashi K. KakimotoT. Hayashida Y. HanadaS. Fujita K. MoritaN. Nakamura S. HanyuY. Sutoh H. KutamiY. Iijima T. Saitoh 《Physica C: Superconductivity and its Applications》2010,470(20):1230-1233
We have studied a hot-wall heating system to produce GdBa2Cu3Oy (GdBCO) films with large critical currents (Ic) at a high production rate by a pulsed-laser-deposition (PLD) method. GdBCO films fabricated at a production rate of 30 m/h under the optimized conditions, especially a distance of 95 mm between the target and the substrate (T–S), exhibited high critical current densities (Jc) of about 3 MA/cm2 and Ic over 300 A at a thickness of 1–2 μm. Furthermore, long GdBCO tapes prepared by repeated depositions at each tape-passing speed of 80 m/h showed uniform Ic distribution along the longitudinal direction, because the hot-wall system enabled to stabilize temperature within a few degrees at 800 °C. A 170 m long tape with Ic over 600 A was successfully fabricated at a production rate of 16 m/h using a laser power of 360 W. 相似文献