以(NH_4)_2Ce(NO_3)_6氧化体系合成己二酰-1′,6′-双(4-卤偶氮苯)

以自制的己二酰-1′,6′-双(4-卤苯肼)化合物为原料,在室温条件下用(NH4)2Ce(NO3)6氧化体系氧化脱氢得3种己二酰-1′,6′-双(4-卤偶氮苯)化合物。产品的结构经元素分析、IR、1H NMR确证。产率在89%—93%之间。     

Effects induced by 𝛄-irradiation on intraband transitions in Sr2+-doped ammonium zinc chloride crystals

Considerable changes were observed in the X-ray diffraction pattern of ammonium zinc chloride after doping with Sr²⁺ in different concentrations and after irradiating with γ rays at different doses. The effect of γ-radiation and Sr²⁺ content on optical parameters of (NH₄)₂ZnCl₄: x Sr²⁺ single crystals (x?=?0.00, 0.020, 0.039, 0.087 or 0.144?wt.%) has been investigated. The transmittance near the absorption edge of unirradiated crystals and crystals irradiated with different γ-doses has been measured, hence the absorption coefficient (α) was calculated. The values of α at room temperature increased under the influence of γ-irradiation. The rate by which α increases with photon energy just before the absorption edge is strongly inhibited by higher γ-doses. The type of intraband transition in (NH₄)₂ZnCl₄: x Sr²⁺ single crystals was found to be of the allowed indirect transition, and γ-irradiation had no effect on the type of transition. The values of the optical energy gap (E _g ) were calculated as a function of γ-dose. The effect of γ-irradiation was found to be more pronounced on samples doped with x?=?0.087 or 0.144?wt.% Sr²⁺. The results can be discussed on the basis of γ-irradiation-induced defects and Sr²⁺ concentration. A diagram representing probable transitions to the created bands due to irradiation could be constructed.     

Theoretical study on halide and mixed halide Perovskite solar cells: Effects of halide atoms on the stability and electronic properties

Increasing the stability of perovskite solar cells is one of the most important tasks in the photovoltaic industry. Thus, the structural, energetic, and electronic properties of pure CH₃NH₃PbI₃ and fully doped compounds (CH₃NH₃PbBr₃ and CH₃NH₃PbCl₃) in cubic and tetragonal phases were investigated using density functional theory calculations. We also considered the effects of mixed halide perovskites CH₃NH₃PbI₂X (where X = Br and Cl) and compared their properties with CH₃NH₃PbI₃. The DFT results indicate that the phase transformation from tetragonal to cubic phase decreases the band gap. The calculated results show that the X‐site ion plays a vital role in the geometrical stability and electronic levels. An increase in the band gap and a reduction in the lattice constants are more apparent in CH₃NH₃PbI₂X compounds (I > Br > Cl).     

Evaluation of Si3N4/Si interface by UV Raman spectroscopy

The stresses at Si₃N₄/Si (1 0 0), (1 1 1) and (1 1 0) interfaces were measured by UV Raman spectroscopy with a 364 nm excitation laser whose penetration depth into the Si substrate was estimated to be 5 nm. The Si₃N₄ films were formed on Si (1 0 0), (1 1 1) and (1 1 0) using nitrogen-hydrogen (NH) radicals produced in microwave-excited high-density Xe/NH₃ mixture plasma. The localized stress detected from Raman peak shift was compressive at the (1 0 0) interface, and tensile at the (1 1 1) and (1 1 0) interfaces. The results showed that stress had strong correlation with the total density of subnitrides at the Si₃N₄/Si interface, and also with the full-width at half-maximum (FWHM) of Si the 2p_3/2 photoemission spectrum arising from the substrate. We believe that the localized stress affected subnitride formation because the amount of subnitride and the FWHM of Si 2p_3/2 decreased while the interface stress shifted in the tensile direction.     

用耦合簇理论及相关一致基研究NH2自由基的解析势能函数

运用CCSD(T)理论和Dunning等的系列相关一致基对NH2分子的基态结构进行了优化, 并使用优选出的cc-pV5Z基组对其进行了频率计算. 得到的结果是: 平衡核间距RNH= 0.10247 nm, 键角∠HNH = 102.947°, 离解能De = 4.2845 eV, 振动频率ν1(a1) = 1546.0342 cm-1, ν2(a1) = 3379.5543 cm-1和ν3(b2) = 3474.4784 cm-1. 对NH及H2分子, 使用优选出的cc-pV6Z基组对其基态的几何构型与谐振频率进行了计算并进行了单点能扫描, 且将扫描结果拟合成了解析的Murrell-Sorbie函数. 采用多体项展式理论导出了NH2分子的解析势能函数, 其等值势能图准确再现了NH2分子的离解能和结构特征. 报导了NH2分子对称伸缩振动等值势能图中存在的两个对称鞍点, 对应于反应NH+H→NH2, 势垒高度约为0.1378×4.184 kJ/mol.     

用耦合簇理论及相关一致基研究NH2自由基的解析势能函数

运用CCSD(T)理论和Dunning等的系列相关一致基对NH2自由基的基态结构进行了优化,并使用优选出的cc-pV5Z基组对其进行了频率计算.得到的结果是:平衡核间距RNH=0.10247 nm,键角∠HNH=102.947°,离解能De=4.2845 eV,振动频率ν1(a1)=1546.0342 cm-1,ν2(a1)=3379.5543 cm-1和ν3(b2)=3474.4784 cm-1.对NH自由基及H2分子,使用优选出的cc-pV6Z基组对其基态的几何构型与谐振频率进行了计算并进行了单点能扫描,且将扫描结果拟合成了解析的Murrell-Sorbic函数.采用多体项展式理论导出了NH2自由基的解析势能函数,其等值势能图准确再现了它的离解能和结构特征.报导了NH2自由基对称伸缩振动等值势能图中存在的两个对称鞍点,对应于反应NH+H→NH2,势垒高度约为0.1378×4.184 kJ/mool.     

Mechanism of Insertion Reactions between Silylenoid H2SiLiF and GeH3R (R =F,OH, NH2): a Theoretical Study

Theoretical investigations on the insertion reaction mechanisms of three- membered-ring silylenoid H2 Si Li F with GeH 3R(R = F, OH, NH2) have been systematically carried out by combined density functional theory(DFT) and ab initio quantum chemical calculations. The geometries of all stationary points for these reactions were optimized using the B3 LYP method and then the QCISD method was used to calculate the single-point energies. The calculated results indicate that, there are one precursor complex(Q), one transition state(TS), and one intermediate(IM) which connect the reactants and the products along the potential energy surface. The insertion reactions of three-membered-ring silylenoid with Ge H3 R proceed in a concerted manner, forming H2RSi-Ge H3 and Li F. The calculated potential energy barriers of the three reactions are 29.17, 30.90, and 54.07 k J/mol, and the reaction energies for the three reactions are –127.05, –116.91, and –103.31 k J/mol, respectively. The insertion reactions in solvents are similar to those in vacuum. Under the same situation, the insertion reactions should occur easily in the following order: GeH 3-F GeH 3-OH GeH 3-NH2. The elucidations of the mechanism of these insertion reactions provided a new mode of silicon-germanium bond formation.     

SCR performance enhancement of NiMnTi mixed oxides catalysts by regulating assembling methods of LDHs-Based precursor

A series of NiMnTi mixed metal oxides (Ni/Mn-TiO₂, Mn/NiTi-LDO and TiO₂/NiMn-LDO, NiMnTi-LDO) were synthesized via different assembling methods and evaluated in the selective catalytic reduction of NO_x with NH₃(NH₃-SCR). As the results presented, catalysts via diverse assembling methods of LDHs templates afforded different catalytic denitrification (DeNO_x) performance, which might be related to the exposure degree of active constituents and the interaction intensity between metal components. Noticeably, compared with Ni/Mn-TiO₂, Mn/NiTi-LDO and TiO₂/NiMn-LDO catalysts, the NiMnTi-LDO catalyst deriving from one step in-situ method NiMnTi-LDH precursor template exhibited the most desirable performance at temperature window of 150–360 °C in NH₃-SCR (above 90% NO_x conversion with 95% N₂ selectivity). The specific structure and property of samples were correlated by means of a series of characterizations, where the results indicated that NiMnTi-LDO possessed the highest surface area, the strongest redox ability, the most abundant acid amount and the best dispersion.     

Cu/SAPO-34催化剂的NH_3-SCO活性及抗水热性能研究

采用浸渍法制备了一系列不同铜含量的Cu/SAPO-34催化剂,考察了该系列催化剂上NH_3选择性催化氧化反应性能(NH_3-SCO)。实验结果表明,10%-Cu/SAPO-34催化剂在300℃温度下具有100%的NH_3去除率,且其氮气选择性大于90%。与此同时,通过XRD、BET、UV-vis、H_2-TPR和XPS等表征分析结果表明,高度分散的CuO是Cu/SAPO-34催化剂的主要活性组分。对10%-Cu/SAPO-34催化剂进行水热处理后,催化剂低温活性明显提高,催化剂的N_2选择性在325℃急剧下降。这是由于水热处理导致一定数量的铜物种发生迁移并且形成了更稳定的铜物种引起。SAPO-34的骨架结构遭到一定程度的破坏。     

Fe-Cu/ZSM-5催化剂的NH_3-SCR脱硝性能

通过浸渍法制备了Fe和Cu含量比不同的系列Fe-Cu/ZSM-5催化剂,利用XRD、H2-TPR、NH3-TPD和原位DRIFTS等技术对催化剂进行了表征,并对其NH3-SCR脱硝性能进行了研究。结果表明,双金属改性的Fe-Cu/ZSM-5催化剂活性温度窗口拓宽,其中,Fe-Cu/ZSM-5 1∶4催化剂脱硝性能优异,250-450℃下脱硝效率均超过90%,335℃时脱硝效率达到最大值96.46%。铜和铁物种能以无定型氧化物良好分散于载体表面,双金属负载改性催化剂保留了ZSM-5的晶体结构。Fe-Cu/ZSM-5 1∶4催化剂具备丰富的酸性位、良好的氧化还原性能,一定温度条件下NH3-SCR反应过程中同时存在E-R机理和L-H机理,且E-R机理反应起始温度低于L-H机理;200℃为催化脱硝反应的起活温度。