几种常见光源特性的研究

本通过大学物理实验中常用光源特性的分析，说明了实验中光源使用的合理性。     

Theoretical Studies on the Si（001）-SiO2 Interface Structure

1 INTRODUCTION Silicon and its alloy have been widely applied in such fields as electronic industry, high-temperature structural ceramics, etc. In addition, the researches on silicon and its relevant materials greatly promote the rapid development of modern optics and infor- mation technology. Therefore, more and more at- tention is focused on the structure of silicon, oxide of silicon and the interfaces between silicon and metal or nonmetal. As an ideal passive film on the Si surface, S…     

烷烃类分子对NC0（A^2∑^＋）自由基的猝灭

采用激光光解—激光诱导荧光(LP—LIF)的方法，用266nm激光光解CHBr3分子产生CH自由基，再与N2O继续反应作为NCO自由基的产生源，用438．6nm激光将电子基态X^2∏i(00^10)的NCO激励到激发态A^2∑^+(00^00)上，通过检测激发态NCO时间分辨荧光信号，测得室温(298K)下NCO(A^2∑^+)被烷烃类分子猝灭的实验结果，获得了A^2∑^+(00^00)态猝灭速率常数．实验发现，随着烷烃分子中C—H键数增加，其猝灭截面也近线性增加，但随着分子体积增大，这种增加趋缓．     

PLD法生长n-Zn1-xCoxO/p-Si异质结的电学性能研究

用高功率脉冲激光轰击Zn1-xCoxO,得到锌、钴和氧的原子、分子和团簇等混合体,并在p型单晶Si表面反应生成n型Zn1-xCoxO.X射线衍射(XRD)、原子力显微镜(AFM)研究表明,这层材料是结构致密均匀、呈c轴高度择优取向的薄膜,与p型Si材料形成n-Zn1-xCoxO/p-Si异质结.在Zn1-xCoxO中加入H,生成了Co-H-Co聚合体,异质结的势垒高度随着Co含量的增加而增加,同时深能级的Co-d轨道捕获作为浅施主的间隙H提供的电子,造成的体系n型半导体层的载流子浓度降低,电阻率提高,使得n-Zn1-xCoxO/p-Si异质结在6.5V时漏电流降致6×10-3 mA,反向击穿电压超过20V,电学性能得到显著改进.     

Schottky Barrier Height Inhomogeneity of Ti／n—GaAs Contact Studied by the I—V—T Technique

The current-voltage characteristics of Ti/n-GaAs Schottky diodes measured over a temperature range of 78-299K have been interpreted on the basis of thermionic emission across an inhomogeneous Schottky contact.The experiment shows that the apparent barrier height (φap) increases from 0.437eV at 78K to 0.698eV at room temperature.the plot of φap versus 1/T does not exhibit a simple linear relationship over the whole temperature range,indicating that the barrier height distribution is more complicated than the frequently observed single Gaussian distribution.A new multi-Gaussian distribution model is developed.Our experimental results can be explained by a double Gaussian distribution of the barrier heights.The weight,the mean barrier height,and the standard deviation of the two Gaussian functions are 0.00001 and 0.99999,0.721 and 0.696,0.069 and 0.012eV,respectively.     

Critical Behaviour of the One—Dimensional Ferromagnetic t—J Model

The one-dimensional super-symmetric ferromagnetic t-J model is studied via the thermal Bethe ansatz.Analytic expressions of the free energy for T→O are obtained.A new critical behaviour beyond the universal class of Luttinger Liquids is found in this system.     

Single＆Two—photon Excited Fluorescence of Two New Compounds with 2—Benzothiazoly as Electron Acceptor

Two new D-x-A type compounds,where electron-donor D is tertiary amino group,electron-acceptor A is 2-benzothiazolyl and x is two conjugated styryl units,have been synthesized.They are named as trans,trans-2-{4-[4-(N,N-diethylamino)styryl]styryl}-1,3-benzothiazole and trans,trans-2-{4-[4-(N,N-diphenylamino)styryl]styryl}-1,3-benzothiazole.Both compounds show strong two-photon excited fluorescence in yellow-orange region when excited by a femtosecond laser at 800nm.