纳米材料在生物分析应用中存在的若干问题

从三个方面考察与总结了一些常用的纳米材料(如碲化镉量子点,纳米金和碳纳米点)在生物分析应用中存在的问题：(1)纳米材料的毒性. 三种裸露纳米材料的平行比较实验表明,碲化镉量子点能够导致细胞代谢活性下降、细胞发生皱缩、甚至死亡,具有很强的毒性;纳米金在高浓度(30 μg/mL)时可对细胞代谢产生一定的抑制作用;而碳纳米点对细胞几乎不产生影响,具有较好的生物相容性. 三种纳米材料的相对毒性为：碲化镉量子点>>纳米金>碳纳米点. 这种相对毒性还得到了绿豆芽生长抑制实验的支持. (2)纳米材料的非均一性. 这主要表现在以下几个方面：粒径分布的非均一性,表面修饰/性质的非均一性,以及在生物样品(如细胞)中分布的非均一性. (3)纳米材料的环境敏感性或稳定性. 实验表明,碲化镉量子点、纳米金和碳纳米点的光学性质对环境pH的改变均十分敏感,而且纳米金不抗盐,在离子强度较高的盐溶液中不稳定、易聚集. 这些问题的严重性在许多以往的研究中并未引起人们的全面重视. 我们希望通过本研究以及对这些问题的再次探讨,能促使人们在实际应用中对相关纳米材料进行重新的审视和合理的选择. 此外,为克服这些问题,我们在文中提到的一些措施可供参考.     

P3HT与CdTe纳米枝晶p-n异质结敏化ZnO纳米管阵列的光电化学研究

采用电化学方法首先在ITO导电玻璃上制备了一维有序ZnO纳米管阵列,然后在ZnO纳米管阵列上采用电化学方法沉积纳米枝状CdTe,形成了纳米枝状CdTe包覆ZnO纳米管的CdTe@ZnO壳核式复合结构,最后在上述复合结构中旋涂一层P3HT薄膜形成P3HT包覆的P3HT@CdTe@ZnO复合薄膜. 以此复合薄膜为光活性层组装成半导体敏化太阳电池,研究了该类电池的光电转换性能,对该电池的工作原理进行初步研究,所得太阳电池能量转换效率最高达到1.38%.     

荧光可逆调控研究CdTe量子点-吖啶橙-小牛胸腺DNA的相互作用及分析应用

水相合成了谷胱甘肽(GSH)修饰的CdTe 量子点(QDs). 在PH＝7.4的Tris-HCl缓冲溶液中, 吖啶橙(AO)通过静电引力吸附到GSH-CdTe QDs 的表面, 与GSH-CdTe QDs形成了基态复合物, 导致GSH-CdTe QDs的荧光猝灭. 在GSH-CdTe QDs-AO体系中加入小牛胸腺DNA (ctDNA), ctDNA诱导AO从GSH-CdTe QDs表面脱落嵌入其双螺旋结构中, 导致GSH-CdTe QDs的荧光恢复. 根据GSH-CdTe QDs荧光的猝灭和恢复, 实现了量子点荧光的可逆调控. ctDNA引起GSH-CdTe QDs-AO体系荧光恢复强度与ctDNA浓度成良好的线性关系, 检出限为0.13 ng•mL^－1, 据此提出了简便快捷、准确、高灵敏测定ctDNA的新方法. 还结合共振瑞利散射(RRS)光谱、吸收光谱和原子力显微镜照片研究了GSH-CdTe QDs-AO-ctDNA三者之间的相互作用, 对相互作用机理进行了讨论并提出了相应的作用模型.     

Characterization of compensation and trapping in CdTe and CdZnTe: Recent advances

Results on the properties of the known impurities, Ge, Sn, V and Bi, and the lattice imperfections, V_Cd and Te_Cd are summarized. We discuss their role in compensation, and in buffering the variations in shallow electronic levels in the grown ingot. We demonstrate that (∼2÷3 kT) variations of the Fermi energy increases carrier trapping to the deep levels. Trapping is manifest in a photoconductivity signal that can be studied by photoconductivity methods, thus allowing to monitor the spectroscopic‐grade material before fabricating the detectors. Our approach could be important in preventing the after‐glow effect and polarization. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Fe_3O_4@SiO_2@CdTe磁性荧光复合微球的制备与表征

采用水热合成法和Stber法制备了氨基功能化SiO2包覆的Fe3O4磁性纳米微球Fe3O4@SiO2-NH2,它与巯基乙酸修饰的CdTe量子点通过酰胺缩合反应,将量子点键合到磁性微球上,制备出单分散性的Fe3O4@SiO2@CdTe磁性荧光双功能微球.用透射电子显微镜、X-射线衍射仪、荧光分光光度计、振动样品磁强计表征了该纳米复合微球的结构和性能.结果表明:Fe3O4@SiO2@CdTe磁性荧光复合微球单分散性好,平均粒径为470nm,饱和磁化强度为37.9emu/g,具有良好的超顺磁性和较高的荧光发光效率.     

Sonoelectrochemical synthesis of water-soluble CdTe quantum dots

A facile and fast one-pot method has been developed for the synthesis of CdTe quantum dots (QDs) in aqueous phase by a sonoelectrochemical route without the protection of N₂. The morphology, structure and composition of the as-prepared products were investigated by high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD) and energy dispersive X-ray spectrometer (EDS). The influences of current intensity, current pulse width, and reaction temperature on the photoluminescence (PL) and quantum yield (QY) of the products were studied. The experimental results showed that the water-soluble CdTe QDs with high PL qualities can be conveniently synthesized without precursor preparation and N₂ protection, and the PL emission wavelength and QY can be effectively controlled by adjusting some parameters. This method can be expected to prepare other QDs as promising building blocks in solar cell, photocatalysis and sensors.     

Thermally evaporated CdS/CdTe thin film solar cells: Optimization of CdCl2 evaporation treatment on absorber layer

CdCl₂ treatment is crucial in the fabrication of highly efficient CdS/CdTe thin-film solar cells. This study reports a comprehensive analysis of thermal evaporated CdS/CdTe thin-film solar cells when the CdTe absorber layer is CdCl₂ annealed at temperatures from 340 to 440 °C. Samples were characterized for structural, optical, morphological and electrical properties. The films annealed at 400 °C showed better crystallinity with a cubic zinc blende structure having large grains. Higher refractive index, optical conductivity, and absorption coefficient were recorded for the CdTe films annealed at 400 °C with CdCl₂. Optimum photoactive properties for CdS/CdTe thin-film solar cells were also obtained when samples were annealed at 400 °C for 20 min with CdCl₂, and the best device exhibited V_OC of 668.4 mV, J_SC of 13.6 mA cm⁻², FF of 53.9% and an efficiency of 4.9%.     

Studies on CdTe films deposited by pulsed laser deposition technique

Polycrystalline cadmium telluride films were successfully deposited on glass substrates by ablating a CdTe target by pulsed Nd–YAG laser. Microstructural studies indicated an increase in the average crystallite size from 15 nm to ∼50 nm with the increase in substrate temperature during deposition. The films deposited here were slightly tellurium rich. X-ray diffraction pattern indicated that the films deposited at 300 K had wurtzite structure while those deposited above 573 K were predominantly of zinc blende structure. Residual strain in the films deposited at 300 K was quite low as compared to those deposited at higher temperatures. PL spectra of all the CdTe films were dominated by a strong peak at ∼921 nm (∼1.347 eV) followed by a low intensity peak at ∼863 nm (∼1.438 eV). Characteristics Raman peaks for CdTe indicated a peak at ∼120 cm⁻¹ followed by peaks located at ∼140 cm⁻¹ and 160 cm⁻¹.     

光谱法研究核壳量子点CdTe/CdS与牛血清白蛋白的相互作用

应用荧光光谱、圆二色光谱和紫外吸收光谱等技术研究核壳量子点CdTe/CdS与牛血清白蛋白(BSA)相互作用的结果表明,CdTe/CdS对BSA的荧光猝灭机理为静态猝灭。根据不同温度下量子点对BSA的荧光猝灭作用计算了结合常数、热力学参数,证明了量子点与BSA相互作用力主要是范德华力或氢键作用力。探讨了量子点对BSA构象的影响。     

Understanding the junction degradation mechanism in CdS/CdTe solar cells using a Cd-deficient CdTe layer

It is known that CdTe solar cells are often degraded under solar illumination. But the degradation mechanism is not fully proved because it does not appear consistently. The junction degradation in CdS/CdTe solar cells was investigated using a CdTe layer with Cd deficient composition, where Cd vacancy concentration is high. It was found that the Cu atoms easily filled the Cd vacancies in CdTe and transport to junction area from Cu back contact. PL measurement and spectral quantum efficiency measurement showed that the incorporation of Cu atoms in CdS forms a defect energy level at 1.55 eV below the conduction band in CdS. As a result, the junction built-in potential is decreased and light penetration into CdTe absorber is shielded. For reliable and stable CdTe cells, the formation of Cd vacancy in CdTe should be avoided by careful control of CdTe.