C4馏份中的甲醇在磺化树脂上的吸附平衡测定

本文建立了适用于易挥发物系的液固吸附平衡静态测定法。测得了五种磺化树脂对C_4馏份中甲醇的吸附等温线,该汲附等温线能够用Li Zuohu方程很好地描述。实验结果还表明,在适当的湿含量范围内,HNA树脂对甲醇有很好的吸附选择性。     

金催化化学发光新体系——苯并吡喃化学发光分析法测定金矿中的痕量金

本文提出了一种测定矿样中痕量金的化学发光分析法,氯化6,7-二羟基-2,4-二甲基苯并吡喃-H_2O_2化学发光体系,方法的检出限为7ppb。工作曲线线性范围是10～1000ppbAu,测定的相对标准偏差小于7％。应用本法测定矿样中的金,结果良好。     

一种新的$1/f$过程小波模型

给出了一种新的二进小波1/f过程模型,从理论上证明了一类谱指数为H的近似1/f过程可通过一簇平稳随机过程产生.由于所提方法利用了1/f过程小波系数的相关性,因而有效地减少了合成1/f过程的谱误差.数值实验结果表明,新模型很好地改进了已有模型.     

Two New Diterpene Acetylxylosides from Aster veitchianus

Two new acetylxylosides,ent-manool-13-O-β-D-2′-acetylxylopyranoside(1)and entmanool-13-O-β-D-2′,4′-diacetylxylopyranoside(2)were isolated from Aster veitchianus.Their structures were elucidated by spectroscopic methods.     

Low-Temperature Growth of Polycrystalline silicon Films by SiCl4／H2 rf Plasma Enhanced Chemical Vapour Deposition

Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.     

2,2’—二硫代双(4,6—二叔丁基苯酚)的晶体和分子结构

一种塑解剂经高压液体色谱分离制备出主要成份2,2′—二硫代双(4,6二叔丁基苯酚)。由质谱分析得到分子量为474化学式为C_(28)H_(2)O_2S_2、晶体呈现孪生。基体单晶属三斜晶系,空间群为(?)PI(NO.2),晶体结构用直接法解出,=0.07。研究结果表明该分子是二硫代酚类化合物。在EI场中,S—S键断裂是主要断裂过程。晶体中,分子的一个环上的羟基是无序分布的。羟基与最邻近的硫原子形成氢键。     

J/ψ衰变到重子、反重子对中SU(3)对称性破坏的研究

利用粒子数据手册(PDG2004)公布的J/ψ衰变到重子、反重子对(BB)各个衰变道分支比的平均值, 对重子八重态的SU(3)对称性重新做了分析. 研究了J/ψ→BB中电磁相互作用和强相互作用的干涉. 得到了在J/ψ→BB中SU(3)单态、电磁 相互作用和SU(3)破坏各个因素所占的大小.     

Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films

Large quantities of CaN nanorods are successfully synthesized on Si（111） substrates by ammoniating the films of Ga2O3/ZnO at 950℃ in a quartz tube. The structure, morphology and optical properties of the as-prepared CaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the CaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80 nm to 300hm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.     

ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术，制备了ZnSe/SiO₂复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌，结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒，也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ，Δ与波长λ的关系，采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS 关键词： 2复合薄膜')" href="#">ZnSe/SiO₂复合薄膜 光学性质 椭偏光度法 荧光光谱