Surface structures formed by individual adsorption and coadsorption of Mn and Bi on Cu(0 0 1), studied by LEED

We have studied the individual adsorption of Mn and Bi, and their coadsorption on Cu(0 0 1) by low-energy electron diffraction (LEED). For Mn, we have determined the c(2 × 2) structure formed at 300 K, whose structure had been determined by several methods. We reconfirmed by a tensor LEED analysis that it is a substitutional structure and that a previously reported large corrugation (0.30 Å) between substitutional Mn and remaining surface Cu atoms coincides perfectly with the present value. In the individual adsorption of Bi, we have found a c(4 × 2) structure, which is formed by cooling below ∼250 K a surface prepared by Bi deposition of ∼0.25 ML coverage at 300 K where streaky half-order LEED spots appear. The c(4 × 2) structure has been determined by the tensor LEED analysis at 130 K and it is a substitutional structure. In the coadsorption, we found a c(6 × 4) structure, which has been determined by the tensor LEED analysis. It is very similar to the previously determined structure of the c(6 × 4) formed by coadsorption of Mg and Bi, and embedded MnBi₄ clusters are arranged in the top Cu layer instead of MgBi₄. Large lateral displacements of Bi atoms in the c(6 × 4)-(Mn + Bi) suggest that the Mn atoms undergo the size-enhancement caused by their large magnetic moment.     

Germanium growth on Br-terminated Si(1 0 0)

The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0).     

2-芳基-3-N-丙酰基-5-(4-溴苯基)-1,3,4-噁唑啉类化合物的合成

噁唑啉类化合物是重要的杂环族化合物,在农药化学和医药化学中应用及其广泛。在现有的文献中已报道的大多是3-N乙-酰基-1,3,4噁-唑啉类化合物的合成[1-6],而3-N乙-酰基-1,3,4噁-唑啉类化合物的合成却很少见。为了深入研究同一分子中聚集不同骨架杂环化合物的合成以及开发新型高     

猜想M(2k,k+1)=3k-1+[(k-1)/2]的反例

Brualdi与Jung在[1]中研究了一类具有固定线和k的n×n矩阵上的最大跳跃数M(n,k),并提出猜想M(2k, k + 1) = 3k - 1 + [(k-1)/2].本文给出了这一猜想的两个反例．     

Luminescent properties of Ce in MSO4 (M: Ca, Sr and Ba) and the effect of Na co-doping

The optical properties of Ce³⁺ in CaSO₄, SrSO₄ and BaSO₄ are reported. The Ce³⁺ ion shows 4f⁰5d¹→²F_5/2,²F_7/2 luminescence in all three sulphates. Co-doping with Na⁺ does not change the local surrounding of the Ce³⁺ ion, but enhances the amount of Ce³⁺ ions built in. Under optical excitation, besides the typical Ce³⁺ doublet emission in the ultraviolet spectral region, band emission around 445 nm was observed. This band emission was not assigned to emission from a Ce³⁺ centre, but to emission from an impurity-trapped exciton. Under X-ray excitation, both Ce³⁺ emission and an emission band around 380 nm was observed. This band was assigned to emission from a self-trapped exciton.     

K_(1,n)-free图具有给定性质的[a,b]-因子的一个充分条件

图G称为K1,n-free图,如果它不含K1,n作为其导出子图.对K1,n-free图具有给定性质的[a,b]-因子涉及到最小度条件进行了研究,得到一个充分条件.     

烷基硫酸盐表面张力的量子化学研究

用AMl量子化学计算法优化了十三烷基硫酸根阴离子和——CH3在不同取代位的十二烷基硫酸根阴离子的几何构型，得到最优构型时最高占据分子轨道能级EHOMO、最低空轨道能级ELUMO、电子能量Eele和偶极矩μ等数据．将这些电子结构数据分别与表面张力相拟合，得到很好的相关性。文中讨论了——CH3在不同位置取代对表面张力的影响。     

弱(L_1,L_2)-BLD映射的正则性

本文首先将文［１］中的ＢＬＤ映射推广为弱（Ｌ１，Ｌ２）－ＢＬＤ映射，并证明了如下正则性结果：存在两个可积指数 Ｐ１＝Ｐ１（ｎ，Ｌ１，Ｌ２）＜ｎ＜ｑ１＝ｑ１（ｎ，Ｌ１，Ｌ２），使得对任意弱（Ｌ１，Ｌ２）－ＢＬＤ映射ｆ∈（Ω，Ｒｎ），都有ｆ∈（Ω，Ｒｎ），即ｆ为（Ｌ１，Ｌ２）－ＢＬＤ映射．     

Using rank-1 lift-and-project closures to generate cuts for 0–1 MIPs, a computational investigation

Various techniques for building relaxations and generating valid inequalities for pure or mixed integer programming problems without special structure are reviewed and compared computationally. Besides classical techniques such as Gomory cuts, Mixed Integer Rounding cuts, lift-and-project and reformulation–linearization techniques, a new variant is also investigated: the use of the relaxation corresponding to the intersection of simple disjunction polyhedra (i.e. the so-called elementary closure of lift-and-project cuts). Systematic comparative computational results are reported on series of test problems including multidimensional knapsack problems (MKP) and MIPLIB test problems. From the results obtained, the relaxation based on the elementary closure of lift-and-project cuts appears to be one of the most promising.