基于Add-drop型微环谐振腔的硅基高速电光调制器设计

相比于传统的All-pass型微环谐振腔硅基电光调制器, Add-drop型微环谐振腔可提供更多的设计自由度, 使调制器在不改变杂质掺杂浓度的情况下就能在调制带宽和消光比性能上获得均衡考虑. 本文设计了基于Add-drop型微环谐振腔的高速、且在低调制电压下实现大消光比的硅基电光调制器, 所用微环谐振腔的半径仅仅为20 μm. 重点分析了直波导与微环谐振腔的耦合对调制器性能的影响, 发现较小的Drop端耦合系数有利于消光比的提高, 但是不能同时达到最佳的调制带宽, 因此设计上存在一个带宽和消光比性能上的折中考虑. 根据优化设计的结果进行了实际器件的制作和测试. 静态光谱测试表明, 在3 V反向偏置电压的作用下, 调制器的消光比最大可达12 dB. 动态电光响应测试中, 在仅仅1.2 V的信号幅值电压下测得了8 Gbps数据传输速率的清晰眼图. 关键词： 电光调制器 绝缘体上的硅 微环谐振腔 载流子色散效应     

唐老鸭的“幸运日”

运气奇差的世界著名鸭子——唐老鸭,是一只热心肠、急躁、爱发脾气、喜欢发牢骚、无时不刻不抱怨生活的白鸭子。你说对了,它没穿裤子。"救命!"作为一只名鸭子,唐老鸭的生活没有半点世界巨星的光鲜亮丽。只要想到米老鼠正在享受生活,唐老鸭就觉得鸭堡上空满布阴霾。"哼,米老鼠有什么了不起的?我可比他厉害多了。瞧我雪白的屁股!"唐老鸭抖了抖自己的肥屁股,昂首挺胸地向前走去。     

质子辐照作用下浮栅单元的数据翻转及错误退火

本文利用60 MeV质子束流,开展了NAND (not and) flash存储器的质子辐照实验,获取了浮栅单元的单粒子翻转截面,分析了浮栅单元错误的退火规律,研究了质子辐照对浮栅单元的数据保存能力的影响.实验结果表明,浮栅单元单粒子翻转截面随质子能量的升高而增大,随质子注量的升高而减小.浮栅单元错误随着退火时间的推移持续增多,该效应在低能量质子入射时更为明显.经质子辐照后,浮栅单元的数据保存能力有明显的退化.分析认为高能质子通过与靶原子的核反应,间接电离导致浮栅单元发生单粒子翻转,翻转截面与质子注量的相关性是因为浮栅单元单粒子敏感性的差异.质子引起的非电离损伤会在隧穿氧化层形成部分永久性的缺陷损伤,产生可以泄漏浮栅电子的多辅助陷阱导电通道,导致浮栅单元错误增多及数据保存能力退化.     

Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor

The interfacial characteristics of Al/Al2O3/ZnO/n-GaAs metal-oxide-semiconductor (MOS) capacitor are investigated. The results measured by X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) show that the presence of ZnO can effectively suppress the formations of oxides at the interface between the GaAs and gate dielectric and gain smooth interface. The ZnO-passivated GaAs MOS capacitor exhibits a very small hysteresis and frequency dispersion. Using the Terman method, the interface trap density is extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.     

Optical spectroscopy studies on FeTelxSex and AxFe2uSe2 （A = K, Rb, Cs）： A brief overview

In this short overview, we summarize the optical spectroscopy FeTezxSex and AxFe2-ySe2. We elaborate that optical spectroscopy band structure evolution across the AFM phase transition temperature, studies on iron selenide superconducting systems measurements yield fruitful information about the the electronic correlation effect, the superconduct- ing pairing energy gap, the condensed carrier density or penetration depth, the inhomogeneity and the nanoscale phase separation between superconductivity and antiferromagnetism in those systems.     

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.     

Dielectric spectroscopy studies of ZnO single crystal

Dielectric relaxation and charge transport induced by electron hopping in ZnO single crystal are measured by using a novocontrol broadband dielectric spectrometer. Typical Debye-like dielectric relaxation originating from electronic hopping between electronic traps and conductive band in surface Schottky barrier region is observed for ZnO single crystal-Au electrode system. However, after insulation of ZnO single crystal by heat treatment in rich oxygen atmosphere, dielectric relaxation and alternating current conductance are observed simultaneously in the dielectric spectra, implying that dielectric relaxation and charge transport can be induced simultaneously by electronic hopping at high temperature in an ordered system. The intrinsic correlation between local dielectric relaxation and long range charge transport offers us a new method to explore complicated dielectrics.     

Control of gain and thermal carrier loss profiles for mode optimization in 980-nm broad-area vertical-cavity surface-emitting lasers

Optical gain and thermal carrier loss distributions regarding current diffusion and various electric contact areas are investigated to improve the near-field modes from the ring-shape to a Gaussian-like configuration for extra-broad-area and oxide-confined vertical-cavity surface-emitting lasers. In this work an equivalent circuit network model is used. The resistance of the continuously-graded distributed Bragg reflectors （DBRs）, the current diffusion and the temperature effect due to different electric-contact areas are calculated and analyzed at first, as these parameters affect one another and are the key factors in determining the gain and thermal carrier loss. Finally, the gain and thermal carrier loss distributions are calculated and discussed.     

C_(60)与MoO_3混合材料做空穴注入层的单层有机电致发光器件

我们制备研究了基于结构为氧化铟锡(ITO)/C_(60)(1.2nm):MoO_3(0.4nm)/1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯(TPBi):三(2-苯基吡啶)铱[Ir(ppy)_3](33%,90 nm)/LiF (0.7 nm)/Al (120 nm)的高效绿色磷光单层有机发光二极管(OLED)。分别将C_(60),MoO_3与C_(60):MoO_3混合物作为空穴注入层(HIL)作为对比。TPBi在发光层中起着主体以及电子传输材料的双重作用。在使用电子传输型主体的单层OLED中,空穴注入层性质对于调节电子/空穴注入以获得电荷载流子传输平衡起重要作用。因此,适当调节空穴注入层是实现高效单层OLED的关键因素。由于MoO_3较大的电子亲和能(6.37 eV)会诱导电子从C_(60)的最高占据分子轨道(HOMO)能级转移至MoO_3,从而形成C_(60)阳离子,并使得Mo元素的价态从+6降至+5,C_(60):MoO_3混合就可以较好的调节空穴注入性质。最终实现最大电流效率为35.88 cd·A~(-1)的单层有机发光器件。