具有部分超结的新型SiC SBD特性分析

提出了一种具有部分超结（super junction, SJ）结构的新型SiC肖特基二极管,命名为SiC Semi-SJ-SBD结构,通过将常规SBD耐压区分为常规耐压区和超结耐压区来减小导通电阻,改善正向特性.利用二维器件模拟软件MEDICI仿真分析,研究了不同超结深度和厚度时击穿电压(V_B)和比导通电阻(R_on-sp),与常规结构的SBD比较得出,半超结结构可以明显改善SiC肖特基二极管特性,并得到优化的设计方案,选择超结宽度2< 关键词： SiC肖特基二极管 super junction 导通电阻 击穿电压     

δ势垒对多臂量子环中持续电流的影响

提出了含δ势垒的多臂量子环模型.研究发现总磁通为零时,持续电流随半导体环增大发生非周期性振荡,下臂因含δ势垒而获得最小的平均持续电流.AB磁通增强时,持续电流会发生周期性等幅振荡,并与电极的磁矩方向以及隧穿电子的自旋方向相关.两电极磁矩方向平行时,Rashba自旋轨道耦合具有改变持续电流相位和相位差的效应;两电极磁矩方向反平行时,Rashba自旋轨道耦合具有改变持续电流振幅的效应.各臂之间持续电流的不同与臂长和磁通分布的差异相关.在一定条件下,两种波函数所对应的持续电流是可分离的. 关键词： 多臂量子环 持续电流 δ势垒 Rashba自旋轨道耦合     

双层钙钛矿La1.8Ca1.2Mn2O7磁性相关I-V非线性与电输运性质

采用传统固相反应法制备了双层钙钛矿结构锰氧化物La_1.8Ca_1.2Mn₂O₇陶瓷,并用X射线粉末衍射法,扫描电镜,HL5500PC Hall效应分析仪和综合物性测量系统(PPMS)对其磁、电性质进行了表征.结果表明:经过两次高温烧结可合成具有双层Sr₃Ti₂O₇型四方结构的La_1.8Ca_1.2Mn_2<     

LiF修饰阴极的双层有机电致发光器件的延时效应

基于载流子的注入、传输和复合过程,建立了双层有机发光器件的电致发光延时理论模型;讨论了电致发光延时随电压、注入势垒、内界面势垒、阳极区厚度及LiF缓冲层(BL)厚度的变化关系。结果表明:(1)低电压下,EL延时由复合过程主导,而高电压下,输运过程起着更重要的作用;(2)当δe/δh2时,M/O界面属于欧姆接触,电流是空间电荷限制的,注入势垒的变化对复合时间trec影响较大,当δe/δh2时,M/O界面成为接触限制,注入势垒的变化对trec几乎没有影响;(3)当内界面势垒超过0.3eV,H′h对trec的影响明显变弱,复合延迟时间基本上由电压和其它因素控制;(4)当电压较小时,随Lh/L的增大,trec增大;当电压超过某一值后,trec几乎不随Lh/L的变化而变化;(5)对于LiF/Ag阴极,在不同的偏压下,LiF的厚度在3.1nm左右时的复合时间最短,对应的EL延迟时间也最短,这与实验中从电致发光效率的角度得出的LiF最佳厚度一致。     

界面势垒对碳纳米管场发射特性的影响

以界面势垒对碳纳米管(CNT)场发射的影响为研究目的,在硅衬底上引进很薄的二氧化硅层,以二氧化硅层作为绝缘势垒,然后在二氧化硅界面层上直接生长CNT,来研究二氧化硅绝缘势垒层对CNT场发射的影响。场发射结果为:Fowler-Nordheim(F-N)曲线分为两部分,高电场下偏离F-N曲线并趋于饱和。在双势垒模型的基础上,从电场在两势垒上的分布不同及电子在两势垒上的隧穿几率不同,理论上分析了界面势垒对场发射的影响:低电场下电子在界面势垒的隧穿几率大于在表面势垒的隧穿几率,界面势垒对场发射不起阻碍作用,场发射遵守F-N规律;高电场下电子在界面势垒的隧穿几率小于在表面势垒的隧穿几率,场发射偏离F-N规律。理论对实验结果进行了合理的解释。     

Effect of Interaction upon Translocation of Confined Polymer Chain Through Nanopore

运用二维的键长涨落模型和蒙特卡洛方法研究高分子链从一个受限空间到自由空间穿孔过程中,链单体与纳米孔之间的相互作用.结果表明,在不同的链长和纳米孔交互作用下,高分子链成功穿越自由能能垒取决于链长和纳米孔长度,并且由于交互作用降低了自由能能垒,导致高分子链在纳米管的平均捕获时间缩短.     

Effect of film thickness manganite-based on interfacial barrier of heterojunctions

Interracial barrier is a key factor that determines the performances of heterojunctions. In this work, we study the effect of manganite film thickness on the effective interracial barrier for La0.67Sr0.33MnO3/Nb：SrTiO3 junctions, The barrier is extracted from the forward current-voltage characteristics. Our results demonstrate that the barrier decreases gradually from -0.85 eV to -0.60 eV when the film thickness decreases from 150 nm to 2 nm. The overall value of the barrier is only about 50% of the corresponding one determined from the photovoltaic effect.     

Capacitance of Organic Schottky Diodes Based on Copper Phthalocyanine （CuPc）

The capacitance of an organic Schottky diode based on copper phthalocyanine （CuPc） is investigated. Based on the organic small-signal equivalent model established, we calculate the reverse capacitance CMetal Of the organic Schottky diode with different kinds of metal cathodes （Mg, Al, Au）. It is found that the reverse capacitance of the organic Schottky diode shows behavior as CMg 〉 CAl 〉 CAu at the same frequency, and according to our analysis, the reverse Schottky junction capacitance Cj is expected to have little effect on the reverse capacitance of the organic Schottky diode, and the space-charge limited current capacitance Us is considered to dominate the reverse capacitance, which limits the improvement of frequency characteristics of organic Schottky diodes.     

Numerical Study on Open-Circuit Voltage of Single Layer Organic Solar Cells with Schottky Contacts: Effects of Molecular Energy Levels, Temperature and Thickness

We numerically investigate the effects of the exciton generation rate G, temperature T, the active layer thickness d and the position of LUMO level EL related to the cathode work function Wc at a given energy gap on the opencircuit voltage Voc of single layer organic solar cells with Schottky contact. It is demonstrated that open-circuit voltage increases concomitantly with the decreasing cathode work function Wc for given anode work functions and exciton generation rates. In the case of given cathode and anode work functions, the open-circuit voltage first increases with the exciton generation rate and then reaches a saturation value, which equals to the builtin voltage. Additionally, it is worth noting that a significant improvement to Voc could be made by selecting an organic material which has a relative high LUMO level （low ｜EL｜ value）. However, Voc decreases as the temperature increases, and the decreasing rate reduces with the enhancement of exeiton generation rate. Our study also shows that it is of no benefit to improve the open-circuit voltage by increasing the device thickness because of an enhanced charge recombination in thicker devices.     

新型金阴极及其紫外光电发射特性

采用直流磁控溅射法制备了不同厚度的金纳米薄膜,在高纯氮气气氛、800 ℃条件下快速退火,在石英基底上制备了具有表面微纳颗粒的新型金阴极。应用扫描电子显微镜对阴极的表面形貌进行表征,结果表明:阴极表面形成了均匀分布的金纳米颗粒,平均粒径随金纳米薄膜厚度的增加（5 nm至20 nm）从300 nm增大到800 nm。在190~360 nm紫外光下,对阴极的光电子发射特性进行了研究,结果表明:相对于平面阴极,新型金阴极的光电子发射效率提高了10倍以上,最高可达到平面阴极的16倍,且随颗粒粒径的减小而增大。采用三步光电发射模型对上述结果进行理论分析,表明阴极光电效率的提高主要由于阴极光电发射面积的增加和局域强电场导致的表面势垒降低。