Negative Resistance in a Two-Dimensional System with Entropic Barrier

A phenomenon of negative resistance is found in two-dimensional bistable and periodic potentials via Langevin simulation, where output quantities for noise and signal driven system, such as the power-spectrum density modulus and the signal power amplification, can become minima at finite temperatures. In such a system, the curvature of the potential along non-transport degree of freedom at the barrier is larger than that at the local minima. The temperature-dependent effective barrier, i.e. entropic barrier, is introduced via integration over the non-transport variables. The system shows the negative resistance because of the competence between the signal and the entropic barrier.     

新型MIp~+-Al_(0.3)Ga_(0.7)As/p-n-n~+-GaAs太阳电池的设计与I-V特性理论分析

为充分利用太阳光的短波部分,将AlxGa1-xAs设计为电池的又一个光伏工作层,并引入固定负电荷,建立界面感应势垒,形成MIp -AlGaAs感应结,有效降低界面对光生电子的复合。以制作工艺简单的p -AlGaAs／p-GaAs界面,将感应结与p／n-GaAs部分连接起来,构成新型高效率复合结构MIp -Al0.3Ga0.7As／p-n-n -GaAs太阳电池。其I-V特性理论研究绐果表明,选择合适的负电荷面密度数和Al0.3Ga0.7As层的掺杂浓度,即:建立合适高度的感应势垒,可显著降低界面复合速度近8个数量级。优化设计得到的整个电池的效率为31.5％,较传统的窗口层电池有明显提高。     

量子隧穿中的等效势垒

本文给出等效垫垒的概念及性质，利用等效势垒的性质可以使量子遂穿中的有关问题更容易解决。     

快速热退火对Co/Si0.85Geo.15肖特基结电学特性的影响

用离子束溅射技术分别在SiO2和单晶Si衬底上沉积了Si1-xGex和Co薄膜.在不同温度下,对Co/Si1-xGex肖特基结进行快速热退火处理(RTA),对处理后的样品进行了表面形貌和电学测量.发现退火温度升高,样品表面粗糙度变大,理想因子也变大,但对肖特基势垒高度(SBH)的影响很小.分析认为,随着退火温度的升高,...     

A1/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

This paper investigates the current-voltage （I-V） characteristics of Al/Ti/4H-SiC Schottky barrier diodes （SBDs） in the temperature range of 77 K-500 K, which shows that Al/Ti/4H SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature （T）, has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the A1/Ti/4H-SiC interface. The effective Richardson constant A＊ = 154 A/cm2 . K2 is determined by means of a modified Richardson plot In（I0/T2） - （qσ）2/2（κT）2 versus q/kT, which is very close to the theoretical value 146 A/cm2 · K2.     

一维势垒散射中粒子的概率分布

利用数值计算方法研究了E>U0、0相似文献   

线度和势垒宽度对球状纳米系统电子散射截面的影响

在有效质量近似和球形方形势模型下,计算了开放型球状纳米系统电子散射截面及电子按能量的概率分布,探讨了线度、势垒宽度对电子散射截面和共振能量以及共振宽度的影响.结果表明:电子的散射截面随能量的分布曲线有一极大值和极小值,而且电子能量的概率分布曲线的极大值位置总是介于散射截面分布曲线的极大值与极小值的能量位置之间;散射截面随内核半径r₀的增大而增大,而且散射截面分布曲线随r₀的增大由较平滑变得较尖锐;散射截面随势垒宽度Δ的增大而增大,但在Δ＝1.4a_CdS–1.7a_CdS的范围内,变化出现异常,在Δ=1.6a_CdS时散射截面出现极小;电子共振能量E_l 随Δ的变化与电子所处状态有关,而电子共振宽度Γ_l随Δ的增大而减小;不论Δ取何值, E_l和Γ_l都满足能量和时间的测不准关系. 关键词： 球状纳米系统 势垒宽度 电子散射截面 电子概率分布     

漏致势垒降低效应对短沟道应变硅金属氧化物半导体场效应管阈值电压的影响

结合应变硅金属氧化物半导体场效应管(MOSFET)结构,通过求解二维泊松方程,得到了应变Si沟道的电势分布,并据此建立了短沟道应变硅NMOSFET的阈值电压模型.依据计算结果,详细分析了弛豫Si_1－βGe_β中锗组分β、沟道长度、漏电压、衬底掺杂浓度以及沟道掺杂浓度对阈值电压的影响,从而得到漏致势垒降低效应对小尺寸应变硅器件阈值电压的影响,对应变硅器件以及电路的设计具有重要的参考价值. 关键词： 应变硅金属氧化物半导体场效应管 漏致势垒降低 二维泊松方程 阈值电压模型     

Determination of the Potential Barrier at the Metal／Oxide Interface in a Specular Spin Valve Structure with Nano—oxide Layers Using Electron Holography

The local potential distribution in a specular spin valve structure with nano-oxide layers has been mapped by using off-axis electron holography in a field emission gun transmission electron microscope.A potential jump of 3-4 V across the metal/oxide interface was detected for the first time.The presence of the potential barrier confirms the formation of the metal/insulator/metal structure,which contributes to the increasing mean free path of spin-polarized elecrons via the specular reflection of spin-polarized electrons at the metal/oxide interface.It leads to nearly double enhancement of the magnetoresistance ratio from 8% to 15%.     

电子波在量子阱势垒上方的局域的束缚：一种法布里—珀罗电子滤波器

最近，电子态在量子阱垒上方的局域和束缚已为实验证实，这是电子的波动性和干波效应的一种直接实验证，试图介绍这种所谓“正能量”束缚态的形成机制，以引起我国学者注意。