| 漏致势垒降低效应对短沟道应变硅金属氧化物半导体场效应管阈值电压的影响 |
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| 引用本文： | 王晓艳,张鹤鸣,王冠宇,宋建军,秦珊珊,屈江涛.漏致势垒降低效应对短沟道应变硅金属氧化物半导体场效应管阈值电压的影响[J].物理学报,2011,60(2):27102-027102. |
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| 作者姓名： | 王晓艳 张鹤鸣 王冠宇 宋建军 秦珊珊 屈江涛 |
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| 作者单位： | (1)西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安 710071; (2)西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安 710071;宝鸡文理学院电子电气工程系,宝鸡 721007 |
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| 摘 要： | 结合应变硅金属氧化物半导体场效应管(MOSFET)结构,通过求解二维泊松方程,得到了应变Si沟道的电势分布,并据此建立了短沟道应变硅NMOSFET的阈值电压模型.依据计算结果,详细分析了弛豫Si1－βGeβ中锗组分β、沟道长度、漏电压、衬底掺杂浓度以及沟道掺杂浓度对阈值电压的影响,从而得到漏致势垒降低效应对小尺寸应变硅器件阈值电压的影响,对应变硅器件以及电路的设计具有重要的参考价值.
关键词：
应变硅金属氧化物半导体场效应管
漏致势垒降低
二维泊松方程
阈值电压模型
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| 关 键 词： | 应变硅金属氧化物半导体场效应管 漏致势垒降低 二维泊松方程 阈值电压模型 |
| 收稿时间： | 2010-03-28 |
Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor |
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| Wang Xiao-Yan,Zhang He-Ming,Wang Guan-Yu,Song Jian-Jun,Qin Shan-Shan,Qu Jiang-Tao.Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor[J].Acta Physica Sinica,2011,60(2):27102-027102. |
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| Authors: | Wang Xiao-Yan Zhang He-Ming Wang Guan-Yu Song Jian-Jun Qin Shan-Shan Qu Jiang-Tao |
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| Institution: | 1) 1)(Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China) 2)(Department of Electron and Electricity Engineering,Baoji University of Arts and Sciences,Baoji 721007,China) |
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| Abstract: | Based on strained silicon metal-oxide semiconductor field transistor (MOSFET) structure, the distribution of surface potential is obtained by solving two-dimensional Poisson equation, and the threshold voltage model is built. According to calculation results, the dependence of threshold voltage on germanium content of relaxed Si1－βGeβ, channel length, voltage of drain, doping content of substrate and channel are studied in detail, and the influence of drain-induced barrier-lowering on scaled strained silicon MOSFET is obtained, which can provide important reference for the design of strained silicon MOSFET device and circuit. |
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| Keywords: | strained Si metal-oxide semiconductor field transistor drain-induced barrier-lowering two-dimensional Poisson equation threshold voltage model |
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