Carbon quantum dots (CQDs) co-doped with N, P and S derived from expired milk was prepared by a simple hydrothermal method. By dipping pure cotton face towel (PCFT) into CQDs ink, a flexible all-biomass CQDs/PCFT sensor was prepared for the first time. Due to the heteroatom doping, extremely small particle size of CQDs and excellent permeability of CQDs/PCFT film, the flexible CQDs/PCFT sensor showed the high sensitivity and bending stability. In the range of 0–60° bending states, the responses of CQDs/PCFT sensor to four target analytes changed by less 5.0%. After 3000 bending of 60°, the maximum change of the response to the target analytes was only 6.4%. Interestingly, due to the abundant functional groups and defects of CQDs, the flexible CQDs/PCFT sensor displayed sensing curves of different shapes for different target analytes. In this way, by establishing a database of sensing curves of target analytes, multiple analytes can be detected discriminatively by relying only on single sensor with the help of image recognition. This work provided a reference for the development of cotton fiber based all biomass flexible gas sensor.
Ti_3C_2 belongs to MXenes family,which is a new two-dimensional material and has been applied in many fields.With simple method of hydrothermal and high temperature calcination,nano structured Ni/Ti_3C_2T_x hybrid was synthesized.The stable layer structure of Ti_3C_2 MXene providing high surface area as well as excellent electronic conductivity are beneficial for deposition and decomposition of discharge product Li_2O_2.Furthermore,possessing special catalytic activity,Ni nanoparticles with size of about 20 nm could accelerate Li_2O_2 breaking down.Taking advantage of two kinds of materials,Ni/Ti_3C_2T_x hybrid as cathode of Li-O_2 battery can achieve a maximal specific capacity of 20,264 mAh/g in 100 mA/g and 10,699 mAh/g in 500 mA/g at the first cycle.This work confirms that the prepared Ni/Ti_3C_2T_x hybrid exhibiting better cycling stability points out a new guideline to improve the electrochemical performance of lithium-oxygen batteries. 相似文献
We investigate theoretically the electron transport of a two-level quantum dot irradiated under a weak laser field at low temperatures in the rotating wave approximation. Using the method of the Keldysh equation of motion for nonequilibrium Green function, we examine the conductance for the system with photon polarization perpendicular to the tunnelling current direction. It is demonstrated that by analytic analysing and numerical examples, a feature of conductance peak splitting appears, and the dependence of conductance on the incident laser frequency and self-energy are discussed. 相似文献
Thin InAs epilayers were grown on GaAs(1 0 0) substrates exactly oriented and misoriented toward [1 1 1]A direction by atmospheric pressure metalorganic vapor phase epitaxy. InAs growth was monitored by in situ spectral reflectivity. Structural quality of InAs layers were studied by using high-resolution X-ray diffraction. No crystallographic tilting of the layers with respect to any kind of these substrates was found for all thicknesses. This result is discussed in terms of In-rich growth environment. InAs layers grown on 2° misoriented substrate provide an improved crystalline quality. Surface roughness of InAs layers depend on layer thickness and substrate misorientation. 相似文献
The microcalorimetric method has been used to study the effects of cefpiramide and ceftizoxime sodium on the E. coli growth. The results revealed that these two cephalosporins may alter the metabolic way of the E. coli. Moreover, the lethal doses of cefpiramide and ceftizoxime sodium are 2.000 and 0.2000 μg mL−1, respectively. Combining with the relationships between growth rate constant (k), the maximum power output (Pm), the time corresponding to the maximum power output (tm) and cephalosporins concentration (C), one can draw the conclusion that the ceftizoxime sodium has a stronger inhibition effects on the growth of E. coli than that of cefpiramide and they both have the possibility to induce the drug fever. 相似文献
We have studied the structural properties of undoped and Si-doped AlxGa1?xN/GaN/AlN on Si (1 1 1) substrate prepared by plasma-assisted molecular beam epitaxy (PA-MBE) using high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). In comparison with undoped AlGaN, the roughness and dislocation density on the surface of the AlGaN layer decrease with Si doping. Full width half maximum (FWHM) of the undoped and Si-doped samples were equal to 0.69° and 0.52°, respectively. This indicates that the Si doping improves the crystalline quality of the AlxGa1?xN layer compared with the undoped one. Raman scattering measurement reveals that the optical phonon modes of A1(LO) and E2(H) of the AlGaN show a one-mode and two-modes behavior, respectively. The Fourier-transform infrared reflectance (FTIR) investigation confirms the one-mode (two-mode) behavior of the LO (TO) phonon in our samples. This is in good agreement with Raman measurement. Finally, the barrier height (ΦB) of undoped and Si-doped AlxGa1?xN samples was found to be 0.86 and 0.74 eV, respectively. 相似文献