不同声音偏好的游客声景观主观评价差异——以丽江大研古镇为例*

古镇作为集自然景观与人文景观一体的景区，具有丰富的声音类型。本研究以大研古镇为例，通过实地调研探究不同声音偏好的游客对古镇声景观的主观评价差异。基于游客的声音偏好，将游客分为偏爱自然声和偏爱人工声两大类。通过因子分析提取游客声景观主观评价的5个主因子：大小、音质、效价、偏好和唤醒。进一步分析发现，这5个因子具有一定的层级性，其中从大小到唤醒代表声景观评价从声音的物理属性向声音的联想评价逐级提升。其中在低层级评价(大小、音质)中，偏好自然声的游客和偏好人工声的游客无显著差异，低层级评价具有稳定性；而在高层级评价(效价、偏好和唤醒)中，偏好人工声的游客更关注古镇声景观的淳朴性和遗产性。因此，游客对声景观的主观评价可视为一种指标，判断景区声景所处的评价阶段，从而为景区声景观改善提供更有针对性的建议。     

80.5 MeV/u碳离子诱发铜靶的放射性剩余产物测量

高能重带电粒子能直接穿透靶原子核外电子层,与原子核发生直接碰撞,发生散裂反应,产生一系列具有放射性的剩余产物核.重带电粒子诱发靶材放射性剩余核与辐射防护和人员安全有着密切联系,当前,大部分剩余核产额主要依靠蒙特卡罗粒子输运程序进行模拟计算,其准确程度亟需通过实验测量进行准确评估.本文利用能量为80.5 MeV/u的(12)^C⁶⁺粒子对薄铜靶开展了辐照实验与伽玛射线测量,结合伽玛谱学分析方法,得出了辐照产生的18种放射性剩余产物的初始活度和产生截面值,并与PHITS模拟结果进行对比.结果表明,PHITS模拟程序对放射性剩余核种类的估计具有较高可靠性,在其绝对产额方面,与实验测量仍具有较大偏差.     

中国生物医学超声联合学术年会(CUMB2019)在北京举行

2019年10月18日–20日,中国声学学会生物医学超声工程分会、中国生物医学工程学会医学超声分会与中国超声医学工程学会仪器工程开发专业委员会在北京联合主办了“2019年度中国生物医学超声联合学术年会”,同期共同举办的还有国际分子影像与微创治疗大会、国际肌肉骨骼及浅表器官超声研讨会和国际生物医学造影技术会议。     

超强频率梳激光场驱动下多光子共振谐波辐射的相位突变研究

本文从理论上研究了在双色频率梳激光场驱动下多光子谐波辐射光谱中的相位突变现象。我们利用Floquet理论非微扰地模拟了频率梳激光场与原子分子等量子系统的相互作用过程。谐波辐射信号是多光子偶极跃迁相干叠加的结果,通过调节频率梳激光场间的相对相位,可以相干地控制谐波辐射信号的强度。通过对谐波信号进行傅里叶变换,可以提取不同跃迁路径的相对相位信息。我们通过改变频率梳组激光场的强度和频率组分实现多光子跃迁频率,让其跨越共振跃迁频率时,谐波相位会发生突变。从而可以观测超强激光场驱动下量子系统共振跃迁频率的斯塔克能移。     

油-气-水三相流超声传感器持气率测量*

为探索油-气-水三相流持气率测量难题,该文开展了脉冲透射式超声传感器持气率测量动态实验研究。首先,利用超声传感器与光纤传感器组合,测取了油-气-水三相流中段塞流、混状流、泡状流的响应信号;其次,提取了超声脉冲信号的最大值序列来反映不同流型时超声传感器响应特性,同时,借助双头光纤传感器与相关测速法,计算得到了流体中气泡弦长序列;最后,结合流型与泡径信息,利用超声传感器测量了不同流型下持气率,并分析了不同流型持气率预测的误差来源,为其他油-气-水三相流持气率测量传感器设计提供了借鉴。     

Surface of room temperature ionic liquid [bmim][PF6] studied by polarization- and experimental configuration-dependent sum frequency generation vibrational spectroscopy

Understanding and control of the surface properties such as molecular orientations are of great importance in numerous applications of ionic liquids. However, there remain discrepancies among the previous experimental and theoretical studies on the surface orientation and structures of room temperature ionic liquids(RTIL) systems. In this article, the orientation of 1-butyl-3-methylimidazolium([bmin]) cation at the air/liquid interface of a characteristic RTIL, 1-butyl-3-methylimidazolium hexafluorophosphate([bmim][PF6]), was investigated by the sum frequency generation vibrational spectroscopy(SFG-VS). Detailed polarization and experimental configuration analyses of the SFG-VS spectra showed the possibility of a small spectral splitting in the CH3 symmetric stretching region, which can be further attributed to the probable existence of multiple orientations for the interfacial [bmim] cations. In addition, the(N)–CH3 vibrations were absent, ruling out the prediction by several recent molecular dynamics simulations which state that portions of the [bmim] cations orient with a standing-up(N)–CH3 group at the ionic liquid surface. Hence, new realistic theoretical models have to be developed to reflect the complex nature of the ionic liquid surface.     

Room-Temperature,Metal-Free,and One-Pot Preparation of 2H-Indazoles through a Mills Reaction and Cyclization Sequence

The Mills reaction and cyclization of readily available 2-aminobenzyl alcohols and nitrosobenzenes using thionyl bromide provided 2H-indazoles in up to 88 % yields. In the metal-free process, acetic acid played a crucial role for the both Mills reaction and cyclization. A brominated 2H-indazole could also be obtained through the one-pot sequence.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.