光参量啁啾脉冲放大增益特性研究

 通过对非线性三波耦合方程组进行数值求解，研究了光参量放大的增益特性及饱和放大特性。给出了泵浦光、信号光参数对参量增益的影响及其与晶体饱和长度的关系。且OPA具有传统CPA系统所不具有的优点，将有可能取代传统的CPA系统而作为超短超强激光系统的新型前端。     

高阶线性微分方程的解及其解的导数的不动点

研究了复域齐次和非齐次线性微分方程的解及其解的导数的不动点与超级问题,得到了整函数系数的齐次和非齐次线性微分方程的解及其解的导数的不动点的两个结果,所得结果推广了一些相关结果.     

Ag-Bi高温超导线材转变温度的测量

介绍了 Bi系银包套高温超导线材的电阻温度特性 ,用测电阻和电磁感应两种方法分别测量了材料的超导转变温度 ,电磁感应法测量曲线上台阶的出现表明材料中 Bi(2 2 2 3)和 Bi(2 2 12 )两相的存在。     

Crystallization process of Bi(Pb)-Sr-Ca-Cu-O glass

A crystallization study has been carried out for rapidly solidified Bi₂Pb_0.5Sr₂Ca₄Cu₅O_x glass. Glass transition temperature T _g, crystallized superconducting phases and microstructural changes were measured and analysed by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The crystallization mechanism of the three superconducting phases — (2201) 20 K phase, (2212) 80 K phase, and (2223) 110 K phase — has been discussed, and a time-temperature-transformation diagram for the glass has been constructed.     

液态铅的电阻率

采用精确的结构因数实验数据和Ｂｅｈａｖｉ模型赝势，用Ｚｉｍａｎ理论计算了液态铅的电阻率．计算结果和实验数据符合很好．讨论了Ｚｉｍａｎ理论对液态铅的适用性以及适合于液态铅的赝势的特征．     

Characteristic of a broadband Ti:LiNbO3 optical modulator with buried electrodes and etched grooves in the buffer layer

Traveling wave Ti:LiNbO₃ Mach-Zehnder optical modulators with buried electrodes and etched grooves in the SiO₂ buffer layer are analyzed by the finite element method. The tradeoff between the bandwidth BW and the half-wave voltage Vπ is discussed. The value of BW/Vπ is used to weight the total performance of the modulator. Taking a thick buffer layer and etching deep grooves in the buffer layer are demonstrated as two effective methods to improve the performance of the modulator. A 3-dB optical bandwidth of 18 GHz with half-wave voltage 5V at a wavelength of 1.55 pm could be obtained even though the electrode is not very thick. When the requirement of half-wave voltage is not very critical, a bandwidth of more than 100 GHz can be obtained.     

PHOTOLUMINESCENCE STUDY ON Hg1-xCdxTe THIN FILM IMPLANTED WITH As ION

Photoluminescence spectra of a series of MBE-grown Hg_1-xCd_xTe samples with the same mole fraction of about x≈0.39 have been measured at different temperatures from 5 to 100 K. By aid of the temperature and exciting laser power dependence of photoluminescence peak energy and relative intensity, as well as of the comparison with other measurements, four main structures dominating in the photoluminescence spectra are attributed to band to band, D^oX, A^oX and D^oA^o transitions. A deep donor state level located at about 8.5meV below the bottom of the conduction band has been observed and is determined to be due to the arsenic-occupied mercury vacancies. Two acceptor levels located at about 14.5 meV and about 31.5 meV above the top of the valance band have also been found from the measuements, which are identified as the mercury vacancies and As in anion site, respectively.     

单模光纤中皮秒啁啾脉冲压缩

对单模光纤正群速色散区秒啁啾脉冲的非线性传进行了近似的解析分析和定量的数值计算。结果表明，负啁啾脉冲在传输过程中能得到有效压缩。压缩比与脉冲初始峰值功率和初始啁啾程度有关。初始峰值功率一定的脉冲，其压缩比随初始啁啾程度的增大面大，初始啁啾程度一定的脉冲，压缩比随初始峰值功率的增大而减小，表明自相位调制效应导致脉冲压缩效果变差。计算结果还表明，在脉冲时域宽度得到压缩的同时，光谱宽度也能得到同步压缩。     

产生特殊聚焦图形的二元光学元件

通过面积编码将伽博（Gabor)波带片的透过率函数的余弦分布等效为二元分布，研制了能产生各种特殊聚焦图形的二元光学元件。根据透镜聚焦的物理原理制作的二元振幅型波带片可以方便地产生多种聚焦线，给出了相应的实验结果，并讨论了改善聚焦效果的优化条件。     

Ga1-xInxAs/InAsyP1-y/InP异质结的MOCVD生长及表征

Ga1-xInxAs(x>0.53)材料是未来长距离低损耗光纤通信的理想光源材料和探测器材料之一.我们采用水平常压MOCVD系统,在InP衬底上成功地生长了Ga1-xInxAs(x>0.53)/InAsyP1-y/Inp异质结材料.其中InAs1-yPy为组份阶梯变化的多层结构.由样品的(400)面X光衍射结果测定了各层组份.由二次离子质谱(SIMS)得到了样品剖面组份变化结果,证明InAs1-yPy层组份为阶梯状变化的.通过对光致发光结果和X光衍射结果比较,可以看到,InAsyP1-y层通过位错和弹性畸变二种方式来释放或积累Ga1-xInxAs与InP间的失配应力,从而减少了Ga1-xInxAs中的失配位错.有效地改善了Ga1-xInxAs的质量.已获得了x高达0.94表面光亮的Ga1-xInxAs/InAs1-yPy/InP异质结材料.